Invention Grant
- Patent Title: Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors
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Application No.: US14591981Application Date: 2015-01-08
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Publication No.: US09793339B2Publication Date: 2017-10-17
- Inventor: Ching-Sheng Chu , Chern-Yow Hsu , Shih-Chang Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/20 ; H01L49/02 ; H01L21/762 ; H01L21/768 ; H01L23/522 ; H01L23/532

Abstract:
The present disclosure relates to a MIM capacitor that includes a composite capacitor top metal (CTM) electrode and a composite capacitor bottom metal (CBM) electrode. The composite CBM electrode includes a first diffusion barrier layer overlying a first metal layer, and the composite CTM electrode includes a second diffusion barrier layer overlying a second metal layer. A dielectric layer is arranged over the composite CBM electrode, underlying the composite CTM electrode. The first and second diffusion barrier layers protect the first and second metal layers from metal that diffuses or moves from a metal line underlying the MIM capacitor to the composite CTM and CBM electrodes during manufacture. A method of manufacturing the MIM capacitor is also provided.
Public/Granted literature
- US20160204190A1 METHOD FOR PREVENTING COPPER CONTAMINATION IN METAL-INSULATOR-METAL (MIM) CAPACITORS Public/Granted day:2016-07-14
Information query
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