发明授权
- 专利标题: Device and method for repairing memory cell and memory system including the device
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申请号: US15498855申请日: 2017-04-27
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公开(公告)号: US09831003B2公开(公告)日: 2017-11-28
- 发明人: Kyo-Min Sohn , Ho-Young Song , Sang-Joon Hwang , Cheol Kim , Dong-Hyun Sohn
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Onello & Mello LLP
- 主分类号: G11C29/44
- IPC分类号: G11C29/44 ; G11C29/56 ; G11B20/18 ; G01R31/3187 ; G06F11/27 ; G11C29/36 ; G11C29/42 ; G11C11/4094 ; G11C11/4096 ; G11C11/4078 ; G11C17/16 ; G11C17/18 ; G11C29/00
摘要:
Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.