- 专利标题： Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices
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申请号： US15440365申请日： 2017-02-23
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公开(公告)号： US09842857B2公开(公告)日： 2017-12-12
- 发明人: Rahul Sharangpani , Sateesh Koka , Raghuveer S. Makala , Srikanth Ranganathan , Mark Juanitas , Johann Alsmeier
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： US TX Plano
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Plano
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L27/11582 ; H01L27/1157 ; H01L27/11573 ; H01L27/11524 ; H01L27/11556 ; H01L27/11529 ; H01L23/522 ; H01L23/528
摘要：
A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.
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