Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15290269Application Date: 2016-10-11
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Publication No.: US09847422B2Publication Date: 2017-12-19
- Inventor: Jung-Hwan Kim , Hun-Hyeoung Leam , Tae-Hyun Kim , Seok-Woo Nam , Hyun Namkoong , Yong-Seok Kim , Tea-Kwang Yu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2007-0038327 20070419
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L21/762 ; H01L21/8234 ; H01L27/115 ; H01L27/11521 ; H01L27/11568 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L21/308
Abstract:
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
Public/Granted literature
- US20170033225A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-02-02
Information query
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