发明授权
- 专利标题： Advanced electronic device structures using semiconductor structures and superlattices
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申请号： US15601890申请日： 2017-05-22
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公开(公告)号： US09871165B2公开(公告)日： 2018-01-16
- 发明人: Petar Atanackovic , Matthew Godfrey
- 申请人： The Silanna Group Pty Ltd
- 申请人地址： AU Eight Mile Plains, Queensland
- 专利权人： The Silanna Group Pty Ltd
- 当前专利权人： The Silanna Group Pty Ltd
- 当前专利权人地址： AU Eight Mile Plains, Queensland
- 代理机构： The Mueller Law Office, P.C.
- 优先权： AU2014902008 20140527
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L31/00 ; H01L21/00 ; H01L33/06 ; H01L33/00 ; H01L21/02 ; H01L33/16 ; H01L33/32 ; H01L27/15 ; H01L33/10 ; H01L33/14 ; H01L33/18
摘要：
Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.
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