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1.发明申请公开(公告)号：US20180122985A1
公开(公告)日：2018-05-03
申请号：US15853379
申请日：2017-12-22
发明人： Petar Atanackovic , Matthew Godfrey
IPC分类号： H01L33/06 , H01L21/02 , H01L33/00 , H01L33/32 , H01L27/15 , H01L33/10 , H01L33/14 , H01L33/18 , H01L33/16
CPC分类号： H01L33/06 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02483 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L27/15 , H01L33/007 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/18 , H01L33/32
摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.
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公开(公告)号：US20170263809A1
公开(公告)日：2017-09-14
申请号：US15594015
申请日：2017-05-12
发明人： Petar Atanackovic
IPC分类号： H01L33/00 , H01L29/16 , H01L31/0304 , H01L33/34 , H01L31/105 , H01L31/18 , H01L33/12 , H01L33/32 , H01L33/06 , H01L31/0352
CPC分类号： H01L33/0075 , H01L29/1606 , H01L29/167 , H01L31/0288 , H01L31/03042 , H01L31/03044 , H01L31/03048 , H01L31/035263 , H01L31/105 , H01L31/1848 , H01L31/1856 , H01L33/0012 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/325 , H01L33/343 , Y02E10/50
摘要： A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.
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公开(公告)号：US09748207B2
公开(公告)日：2017-08-29
申请号：US15386867
申请日：2016-12-21
IPC分类号： H01L21/02 , H01L25/065 , H01L25/00 , H01L23/00
CPC分类号： H01L25/0657 , H01L23/48 , H01L24/16 , H01L24/32 , H01L25/50 , H01L2224/16145 , H01L2224/32145 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/73265 , H01L2225/06531 , H01L2225/06541 , H01L2924/00014 , H01L2924/00
摘要： An electronic circuit structure is formed with first and second dies bonded together. A first active layer is formed in the first die, and a second active layer is formed in the second die. The first and second dies are bonded together, with an isolation capacitor, through which the first and second active layers communicate, disposed between the first and second dies.
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公开(公告)号：US20160308090A1
公开(公告)日：2016-10-20
申请号：US15192731
申请日：2016-06-24
发明人： Petar Atanackovic
CPC分类号： H01L33/0095 , H01L22/24 , H01L22/26 , H01L27/153 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/44 , H01L2933/005 , H01L2933/0058
摘要： Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.
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公开(公告)号：US20150070073A1
公开(公告)日：2015-03-12
申请号：US14395474
申请日：2013-04-17
IPC分类号： H03K17/16 , H04J3/04 , H01L21/762 , H01L29/06 , H01L23/538 , H01L21/768
CPC分类号： H03K17/161 , H01F19/04 , H01L21/762 , H01L21/76264 , H01L21/76838 , H01L23/5227 , H01L23/538 , H01L27/0203 , H01L29/0649 , H01L2224/49171 , H01L2924/1305 , H01L2924/13062 , H03M1/0827 , H03M1/12 , H03M1/66 , H04J3/047 , H01L2924/00
摘要： An integrated circuit, including: at least three integrated circuit portions mutually spaced on a single electrically insulating die, the integrated circuit portions being mutually galvanically isolated; and signal coupling structures on the die to allow communication of signals between the integrated circuit portions while maintaining the galvanic isolation therebetween.
摘要翻译： 一种集成电路，包括：在单个电绝缘管芯上相互间隔开的至少三个集成电路部分，所述集成电路部分被互相隔离; 和芯片上的信号耦合结构，以允许集成电路部分之间的信号通信，同时保持它们之间的电流隔离。
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公开(公告)号：US09614122B2
公开(公告)日：2017-04-04
申请号：US15192731
申请日：2016-06-24
发明人： Petar Atanackovic
IPC分类号： H01L21/00 , H01L33/00 , H01L33/44 , H01L27/15 , H01L33/20 , H01L33/32 , H01L21/66 , H01L33/30
CPC分类号： H01L33/0095 , H01L22/24 , H01L22/26 , H01L27/153 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/44 , H01L2933/005 , H01L2933/0058
摘要： Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.
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公开(公告)号：US20160321210A1
公开(公告)日：2016-11-03
申请号：US15204830
申请日：2016-07-07
CPC分类号： G06F13/4282 , G06F13/385 , G06F13/4045 , G06F2213/0042
摘要： First and second communication interfaces receive and transmit first and second communications through isolation circuitry at different communication frequency levels. In some embodiments, the first and second communication interfaces are USB 3 compatible, and the isolation circuitry is between the first and second communication interfaces and is compatible with all USB 3 communication modes.
摘要翻译： 第一和第二通信接口通过隔离电路以不同的通信频率级别接收和发送第一和第二通信。 在一些实施例中，第一和第二通信接口是USB 3兼容的，并且隔离电路在第一和第二通信接口之间，并且与所有USB 3通信模式兼容。
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公开(公告)号：US20140319612A1
公开(公告)日：2014-10-30
申请号：US14356880
申请日：2012-11-02
发明人： Andrew John Brawley
IPC分类号： H01L29/786 , H01L27/12 , H01L21/84 , H01L29/66
CPC分类号： H01L29/78603 , H01L21/76254 , H01L21/84 , H01L27/1203 , H01L29/66742
摘要： A semiconductor-on-insulator structure, including a semiconductor thin film having electronic devices formed therein, the semiconductor thin film being disposed on a first face of an electrically insulating thin film; wherein to reduce parasitic capacitance, there is no bulk substrate attached to a second face of the electrically insulating thin film opposite to the first face, and to provide a path for heat flow from the devices, the thermal conductivity of the electrically insulating thin film is substantially greater than 1.4 W·m−1·K−1.
摘要翻译： 一种绝缘体上半导体结构，包括其中形成有电子器件的半导体薄膜，所述半导体薄膜设置在电绝缘薄膜的第一面上; 为了减小寄生电容，不存在与第一面相反的电绝缘性薄膜的第二面附着的体基板，并且为了提供来自器件的热流的路径，电绝缘性薄膜的导热性为 基本上大于1.4W·m-1·K-1。
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公开(公告)号：US09691938B2
公开(公告)日：2017-06-27
申请号：US14976337
申请日：2015-12-21
发明人： Petar Atanackovic , Matthew Godfrey
IPC分类号： H01L21/00 , H01L33/06 , H01L33/00 , H01L33/16 , H01L33/32 , H01L21/02 , H01L27/15 , H01L33/10 , H01L33/14 , H01L33/18
CPC分类号： H01L33/06 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02483 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L27/15 , H01L33/007 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/18 , H01L33/32
摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.
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公开(公告)号：US09685587B2
公开(公告)日：2017-06-20
申请号：US14976208
申请日：2015-12-21
发明人： Petar Atanackovic
IPC分类号： H01L29/06 , H01L33/06 , H01L29/16 , H01L29/167 , H01L31/0288 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/18 , H01L33/12 , H01L33/32 , H01L33/34 , H01L33/00
CPC分类号： H01L33/0075 , H01L29/1606 , H01L29/167 , H01L31/0288 , H01L31/03042 , H01L31/03044 , H01L31/03048 , H01L31/035263 , H01L31/105 , H01L31/1848 , H01L31/1856 , H01L33/0012 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/325 , H01L33/343 , Y02E10/50
摘要： A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.
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