公开(公告)号：US09691938B2

公开(公告)日：2017-06-27

申请号：US14976337

申请日：2015-12-21

申请人： THE SILANNA GROUP PTY LTD.

发明人： Petar Atanackovic ,  Matthew Godfrey

IPC分类号： H01L21/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H01L21/02 ,  H01L27/15 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18

CPC分类号： H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

公开(公告)号：US20160149074A1

公开(公告)日：2016-05-26

申请号：US14976337

申请日：2015-12-21

申请人： THE SILANNA GROUP PTY LTD.

发明人： Petar Atanackovic ,  Matthew Godfrey

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L27/15 ,  H01L33/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/14

CPC分类号： H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

摘要翻译： 公开了用于形成这些半导体结构的半导体结构和方法。 例如，公开了p型或n型半导体结构。 半导体结构具有极性晶体结构，其生长轴基本上平行于极性晶体结构的自发极化轴。 半导体结构从更宽的带隙（WBG）材料到较窄的带隙（NBG）材料或从NBG材料沿生长轴向WBG材料的组成变化以诱导p型或n型导电性。

公开(公告)号：US09871165B2

公开(公告)日：2018-01-16

申请号：US15601890

申请日：2017-05-22

申请人： The Silanna Group Pty Ltd

发明人： Petar Atanackovic ,  Matthew Godfrey

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L21/00 ,  H01L33/06 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16 ,  H01L33/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18

CPC分类号： H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

公开(公告)号：US20180122985A1

公开(公告)日：2018-05-03

申请号：US15853379

申请日：2017-12-22

申请人： The Silanna Group Pty Ltd

发明人： Petar Atanackovic ,  Matthew Godfrey

IPC分类号： H01L33/06 ,  H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18 ,  H01L33/16

CPC分类号： H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

公开(公告)号：US20170263813A1

公开(公告)日：2017-09-14

申请号：US15601890

申请日：2017-05-22

申请人： The Silanna Group Pty Ltd

发明人： Petar Atanackovic ,  Matthew Godfrey

IPC分类号： H01L33/06 ,  H01L21/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18 ,  H01L33/00 ,  H01L27/15

CPC分类号： H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.