Invention Grant
- Patent Title: Semiconductor devices comprising magnetic memory cells and methods of fabrication
-
Application No.: US15289610Application Date: 2016-10-10
-
Publication No.: US09876053B2Publication Date: 2018-01-23
- Inventor: Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12 ; H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/10

Abstract:
A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
Public/Granted literature
- US20170033155A1 SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS AND METHODS OF FABRICATION Public/Granted day:2017-02-02
Information query
IPC分类: