- 专利标题： Epitaxial channel with a counter-halo implant to improve analog gain
-
申请号： US15172417申请日： 2016-06-03
-
公开(公告)号： US09899475B2公开(公告)日： 2018-02-20
- 发明人: Tsung-Hsing Yu , Shih-Syuan Huang , Ken-Ichi Goto , Yi-Ming Sheu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Eschweiler & Potashnik, LLC
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/8234 ; H01L27/088 ; H01L29/165 ; H01L29/78 ; H01L29/66 ; H01L21/265
摘要：
The present disclosure relate to an integrated chip having long-channel and short-channel transistors having channel regions with different doping profiles. In some embodiments, the integrated chip includes a first gate electrode arranged over a first channel region having first length, and a second gate electrode arranged over a second channel region having a second length greater than the first length. The first channel region and the second channel region have a dopant profile, respectively along the first length and the second length, which has a dopant concentration that is higher by edges than in a middle of the first channel region and the second channel region. The dopant concentration is also higher by the edges of the first channel region than by the edges of the second channel region.
公开/授权文献
信息查询
IPC分类:
