- 专利标题： Method for making a semiconductor device with sidewal spacers for confinig epitaxial growth
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申请号： US15178853申请日： 2016-06-10
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公开(公告)号： US09929253B2公开(公告)日： 2018-03-27
- 发明人: Xiuyu Cai , Qing Liu , Ruilong Xie , Chun-Chen Yeh
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC. , STMICROELECTRONICS, INC.
- 申请人地址： US NY Armonk US TX Coppell KY Grand Cayman
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC.
- 当前专利权人地址： US NY Armonk US TX Coppell KY Grand Cayman
- 代理机构： Cantor Colburn LLP
- 代理商 Steven Meyers
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/165 ; H01L29/78 ; H01L21/02 ; H01L21/311 ; H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/10
摘要：
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers.
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