Invention Grant
- Patent Title: Electrostatic discharge protection structures for eFuses
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Application No.: US14971644Application Date: 2015-12-16
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Publication No.: US09940986B2Publication Date: 2018-04-10
- Inventor: Alain F. Loiseau , Joseph M. Lukaitis , Ephrem G. Gebreselasie , Richard A. Poro , Andreas D. Stricker , Ahmed Y. Ginawi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H02H9/04
- IPC: H02H9/04 ; G11C7/24 ; H01L23/525 ; H01L27/02 ; H01L27/06 ; H01L27/112 ; G11C5/00 ; G11C17/16

Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.
Public/Granted literature
- US20170178704A1 ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR EFUSES Public/Granted day:2017-06-22
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