公开(公告)号：US20160118138A1

公开(公告)日：2016-04-28

申请号：US14522017

申请日：2014-10-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ephrem G. Gebreselasie ,  Alain Loiseau ,  Joseph M. Lukaitis ,  Richard A. Poro, III ,  Andreas D. Stricker

IPC: G11C17/16 ,  G06F17/50 ,  H03K19/177

CPC classification number: G11C17/16 ,  G11C17/18 ,  H03K19/17768

Abstract: Circuits for programming an electrical fuse, methods for programming an electrical fuse, and methods for designing a silicon-controlled rectifier for use in programming an electrical fuse. A programming current for the electrical fuse is directed through the electrical fuse and the silicon-controlled rectifier. Upon reaching a programmed resistance value for the electrical fuse, the silicon-controlled rectifier switches from a low-impedance state to a high-impedance state that interrupts the programming current.

Abstract translation: 用于编程电熔丝的电路，用于编程电熔丝的方法以及用于设计用于编程电熔丝的硅控整流器的方法。 电熔丝的编程电流通过电熔丝和可控硅整流器引导。 当达到电熔丝的编程电阻值时，硅控整流器从低阻抗状态切换到中断编程电流的高阻态。

公开(公告)号：US20170178704A1

公开(公告)日：2017-06-22

申请号：US14971644

申请日：2015-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alain F. LOISEAU ,  Joseph M. Lukaitis ,  Ephrem G. Gebreselasie ,  Richard A. Poro ,  Andreas D. Stricker ,  Ahmed Y. Ginawi

IPC: G11C7/24 ,  H01L27/06 ,  H01L23/525 ,  H01L27/112 ,  H01L27/02

CPC classification number: G11C7/24 ,  G11C5/005 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0617 ,  H01L27/11206

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.

公开(公告)号：US09318217B1

公开(公告)日：2016-04-19

申请号：US14522017

申请日：2014-10-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ephrem G. Gebreselasie ,  Alain Loiseau ,  Joseph M. Lukaitis ,  Richard A. Poro, III ,  Andreas D. Stricker

IPC: H01H37/76 ,  G11C17/16 ,  H03K19/177 ,  G06F17/50

CPC classification number: G11C17/16 ,  G11C17/18 ,  H03K19/17768

Abstract: Circuits for programming an electrical fuse, methods for programming an electrical fuse, and methods for designing a silicon-controlled rectifier for use in programming an electrical fuse. A programming current for the electrical fuse is directed through the electrical fuse and the silicon-controlled rectifier. Upon reaching a programmed resistance value for the electrical fuse, the silicon-controlled rectifier switches from a low-impedance state to a high-impedance state that interrupts the programming current.

Abstract translation: 用于编程电熔丝的电路，用于编程电熔丝的方法以及用于设计用于编程电熔丝的硅控整流器的方法。 电熔丝的编程电流通过电熔丝和可控硅整流器引导。 当达到电熔丝的编程电阻值时，硅控整流器从低阻抗状态切换到中断编程电流的高阻抗状态。

公开(公告)号：US20190214381A1

公开(公告)日：2019-07-11

申请号：US15866999

申请日：2018-01-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ahmed Y. GINAWI ,  Andreas D. Stricker ,  Alain F. Loiseau ,  Ephrem G. Gebreselasie ,  Joseph M. Lukaitis ,  Richard A. Poro, III

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0266 ,  H01L27/0292 ,  H01L27/0296 ,  H02H9/044 ,  H02H9/046

Abstract: The present disclosure relates to an electrostatic discharge (ESD) clamp and, more particularly, to an ESD clamp with reduced off-state power consumption. The structure includes: one or more inverters connected to a timing circuit; a first transistor receiving an output signal from a last of the one or more inverters and an output signal from the timing circuit; a second transistor with its gate connected to the first transistor, in series; and a voltage node providing a separate voltage to a gate of the second transistor.

公开(公告)号：US09940986B2

公开(公告)日：2018-04-10

申请号：US14971644

申请日：2015-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alain F. Loiseau ,  Joseph M. Lukaitis ,  Ephrem G. Gebreselasie ,  Richard A. Poro ,  Andreas D. Stricker ,  Ahmed Y. Ginawi

IPC: H02H9/04 ,  G11C7/24 ,  H01L23/525 ,  H01L27/02 ,  H01L27/06 ,  H01L27/112 ,  G11C5/00 ,  G11C17/16

CPC classification number: G11C7/24 ,  G11C5/005 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0617 ,  H01L27/11206

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.

公开(公告)号：US20160379999A1

公开(公告)日：2016-12-29

申请号：US14748355

申请日：2015-06-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony I. Chou ,  Sungjae Lee ,  Joseph M. Lukaitis ,  Robert R. Robison

IPC: H01L27/12 ,  H01L21/3205 ,  H01L21/22 ,  H01L23/522 ,  H01L23/373

CPC classification number: H01L27/1207 ,  H01L23/3677 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5228 ,  H01L23/535

Abstract: Methods and structures for capacitively isolating a heat shield from a handle wafer of a silicon-on-insulator substrate. A contact plug is located in a trench extending through a trench isolation region in a device layer of the silicon-on-insulator substrate and at least partially through a buried insulator layer of the silicon-on-insulator substrate. The heat shield is located in an interconnect structure, which also includes a wire coupling the heat shield with the contact plug. An isolation structure is positioned between the contact plug and a portion of the handle wafer. The isolation structure provides the capacitive isolation.

Abstract translation: 将隔热层与绝缘体上硅衬底的处理晶片电容性隔离的方法和结构。 接触插塞位于延伸穿过绝缘体上硅衬底的器件层中的沟槽隔离区域并且至少部分地穿过绝缘体上硅衬底的掩埋绝缘体层的沟槽中。 隔热罩位于互连结构中，其还包括将隔热罩与接触插头连接的线。 隔离结构位于接触塞和处理晶片的一部分之间。 隔离结构提供电容隔离。

公开(公告)号：US09530798B1

公开(公告)日：2016-12-27

申请号：US14748355

申请日：2015-06-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony I. Chou ,  Sungjae Lee ,  Joseph M. Lukaitis ,  Robert R. Robison

IPC: H01L23/552 ,  H01L23/66 ,  H01L27/12 ,  H01L23/522 ,  H01L23/373 ,  H01L21/22 ,  H01L21/3205

CPC classification number: H01L27/1207 ,  H01L23/3677 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5228 ,  H01L23/535

Abstract: Methods and structures for capacitively isolating a heat shield from a handle wafer of a silicon-on-insulator substrate. A contact plug is located in a trench extending through a trench isolation region in a device layer of the silicon-on-insulator substrate and at least partially through a buried insulator layer of the silicon-on-insulator substrate. The heat shield is located in an interconnect structure, which also includes a wire coupling the heat shield with the contact plug. An isolation structure is positioned between the contact plug and a portion of the handle wafer. The isolation structure provides the capacitive isolation.

Abstract translation: 将隔热层与绝缘体上硅衬底的处理晶片电容性隔离的方法和结构。 接触插塞位于延伸穿过绝缘体上硅衬底的器件层中的沟槽隔离区域并且至少部分地穿过绝缘体上硅衬底的掩埋绝缘体层的沟槽中。 隔热罩位于互连结构中，其还包括将隔热罩与接触插头连接的线。 隔离结构位于接触塞和处理晶片的一部分之间。 隔离结构提供电容隔离。