公开(公告)号：US20170178704A1

公开(公告)日：2017-06-22

申请号：US14971644

申请日：2015-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alain F. LOISEAU ,  Joseph M. Lukaitis ,  Ephrem G. Gebreselasie ,  Richard A. Poro ,  Andreas D. Stricker ,  Ahmed Y. Ginawi

IPC: G11C7/24 ,  H01L27/06 ,  H01L23/525 ,  H01L27/112 ,  H01L27/02

CPC classification number: G11C7/24 ,  G11C5/005 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0617 ,  H01L27/11206

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.

公开(公告)号：US09940986B2

公开(公告)日：2018-04-10

申请号：US14971644

申请日：2015-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Alain F. Loiseau ,  Joseph M. Lukaitis ,  Ephrem G. Gebreselasie ,  Richard A. Poro ,  Andreas D. Stricker ,  Ahmed Y. Ginawi

IPC: H02H9/04 ,  G11C7/24 ,  H01L23/525 ,  H01L27/02 ,  H01L27/06 ,  H01L27/112 ,  G11C5/00 ,  G11C17/16

CPC classification number: G11C7/24 ,  G11C5/005 ,  G11C17/16 ,  H01L23/5256 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0617 ,  H01L27/11206

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.