Invention Grant
- Patent Title: Method for conditioning silicon part
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Application No.: US15235660Application Date: 2016-08-12
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Publication No.: US09947558B2Publication Date: 2018-04-17
- Inventor: Lin Xu , Hong Shih , Robin Koshy , John Daugherty , Satish Srinivasan
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Heyer Law Group LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/67 ; H01L21/3213 ; H01L21/311 ; H01L21/02
Abstract:
A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.
Public/Granted literature
- US20180047594A1 METHOD FOR CONDITIONING SILICON PART Public/Granted day:2018-02-15
Information query
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