Invention Grant
- Patent Title: Magnetoresistive stack and method of fabricating same
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Application No.: US15400889Application Date: 2017-01-06
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Publication No.: US09947865B2Publication Date: 2018-04-17
- Inventor: Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L43/12 ; H01L43/08 ; H01L43/10 ; H01L43/02 ; G11C11/16
Abstract:
A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
Public/Granted literature
- US20170125670A1 Magnetoresistive Stack and Method of Fabricating Same Public/Granted day:2017-05-04
Information query
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