发明授权
- 专利标题： Carbon nanotube-graphene hybrid transparent conductor and field effect transistor
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申请号： US14820011申请日： 2015-08-06
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公开(公告)号： US09954175B2公开(公告)日： 2018-04-24
- 发明人: Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
- 申请人： International Business Machines Corporation , Egypt Nanotechnology Center
- 申请人地址： US NY Armonk EG Cairo
- 专利权人： International Business Machines Corporation,Egypt Nanotechnology Center
- 当前专利权人： International Business Machines Corporation,Egypt Nanotechnology Center
- 当前专利权人地址： US NY Armonk EG Cairo
- 代理机构： Ryan, Mason & Lewis, LLP
- 主分类号： B32B9/00
- IPC分类号： B32B9/00 ; H01L51/00 ; H01L51/05 ; C23C16/26 ; H01B1/04 ; H01L51/10 ; H01L29/16 ; H01L29/778 ; H01L29/66 ; H01L29/786 ; B82Y10/00 ; B82Y40/00 ; C01B32/158 ; C01B32/182 ; C01B32/186 ; C01B32/192 ; H01L29/06 ; B82Y30/00
摘要：
A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.