Invention Grant
- Patent Title: TiN hard mask and etch residual removal
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Application No.: US15138835Application Date: 2016-04-26
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Publication No.: US09976111B2Publication Date: 2018-05-22
- Inventor: Wen Dar Liu , Yi-Chia Lee , William Jack Casteel, Jr. , Tianniu Chen , Rajiv Krishan Agarwal , Madhukar Bhaskara Rao
- Applicant: Air Products and Chemicals, Inc.
- Applicant Address: US AZ Tempe
- Assignee: VERSUM MATERIALS US, LLC
- Current Assignee: VERSUM MATERIALS US, LLC
- Current Assignee Address: US AZ Tempe
- Agent Lina Yang
- Main IPC: C11D7/26
- IPC: C11D7/26 ; C11D11/00 ; C11D3/39 ; C11D3/43 ; C11D3/30 ; C11D3/20 ; C11D3/33 ; C11D3/28 ; C11D3/00 ; C11D3/37 ; H01L21/311 ; H01L21/033 ; H01L21/768 ; H01L21/02
Abstract:
Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
Public/Granted literature
- US20170107460A1 TiN Hard Mask And Etch Residual Removal Public/Granted day:2017-04-20
Information query
