- 专利标题: Magnetic memory based on spin hall effect
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申请号: US15451673申请日: 2017-03-07
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公开(公告)号: US09985201B2公开(公告)日: 2018-05-29
- 发明人: Satoshi Shirotori , Hiroaki Yoda , Yuichi Ohsawa , Yuuzo Kamiguchi , Naoharu Shimomura , Tadaomi Daibou , Tomoaki Inokuchi
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2015-181175 20150914
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; H01L43/08 ; H01L43/02 ; G11C11/16 ; H01L27/22 ; H01L43/10
摘要:
A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
公开/授权文献
- US20170179379A1 MAGNETIC MEMORY 公开/授权日:2017-06-22
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