- 专利标题： NEUROMORPHIC MEMORY DEVICE AND METHOD
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申请号： PCT/US2020/066664申请日： 2020-12-22
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公开(公告)号： WO2021133826A1公开(公告)日： 2021-07-01
- 发明人: KEETH, Brent , ROSS, Frank F. , MURPHY, Richard C.
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： 8000 So. Federal Way
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： 8000 So. Federal Way
- 代理机构： PERDOK, Monique M. et al.
- 优先权： US62/954,186 2019-12-27
- 主分类号： G06N3/063
- IPC分类号： G06N3/063 ; G06N3/04 ; G06N3/08 ; G11C11/54 ; G06F13/1668 ; G06N3/004 ; H01L2225/06506 ; H01L2225/0651 ; H01L2225/06541 ; H01L2225/06562 ; H01L25/0652 ; H01L25/0657 ; H01L25/18
摘要：
Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a stack of memory dies, a controller die, and a buffer. Example memory devices, systems and methods include one or more neuromorphic layers logically coupled between one or more dies in the stack of memory dies and a host interface of the controller die.
