公开(公告)号：EP1547136A2

公开(公告)日：2005-06-29

申请号：EP03780284.0

申请日：2003-10-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： FRABOULET, David ,  GAUTIER, Jacques ,  TONNEAU, Didier ,  CLEMENT, Nicolas ,  BOUCHIAT, Vincent

IPC分类号： H01L21/306 ,  H01L21/321 ,  H01L23/525

CPC分类号： B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  Y10S977/762

摘要： The invention concerns a method for making a wire nanostructure, comprising the following steps: making a semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passing a current between the first and second terminals so as to form at least one continuous processing allowance (R1, R2, R3) in the semiconductive thin film, by migration, under the action of the current, a fraction of semiconducting material, the continuous processing allowance being formed along the direction of the current which flows through the film. The invention is applicable to designing nanocircuits.

公开(公告)号：EP1346405A1

公开(公告)日：2003-09-24

申请号：EP01995728.1

申请日：2001-12-17

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  STMicroelectronics S.A.

发明人： FRABOULET, David ,  MARIOLLE, Denis ,  MORAND, Yves

IPC分类号： H01L21/335 ,  H01L29/76

CPC分类号： B82Y10/00 ,  H01L29/66439 ,  H01L29/7613 ,  Y10S438/962

摘要： The invention concerns a method for making a microstructure comprising an island (30) of material confined between two electrodes (32) forming tabs, the island of material having two lateral flanks parallel to and two lateral flanks perpendicular to the tabs. The invention is characterised in that the lateral flanks of the island are defined by etching at least a layer (16), called template layer, and the tabs are formed by damascening. The invention is useful for making transistors and storage units.

公开(公告)号：EP1547136B1

公开(公告)日：2009-12-30

申请号：EP03780284.0

申请日：2003-10-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： FRABOULET, David ,  GAUTIER, Jacques ,  TONNEAU, Didier ,  CLEMENT, Nicolas ,  BOUCHIAT, Vincent

IPC分类号： H01L21/306 ,  H01L21/321 ,  H01L23/525

CPC分类号： B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  Y10S977/762

摘要： The invention concerns a method for making a wire nanostructure, comprising the following steps: making a semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passing a current between the first and second terminals so as to form at least one continuous processing allowance (R1, R2, R3) in the semiconductive thin film, by migration, under the action of the current, a fraction of semiconducting material, the continuous processing allowance being formed along the direction of the current which flows through the film. The invention is applicable to designing nanocircuits.

公开(公告)号：EP1346405B1

公开(公告)日：2009-11-11

申请号：EP01995728.1

申请日：2001-12-17

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  STMicroelectronics S.A.

发明人： FRABOULET, David ,  MARIOLLE, Denis ,  MORAND, Yves

IPC分类号： H01L21/335 ,  H01L29/76

CPC分类号： B82Y10/00 ,  H01L29/66439 ,  H01L29/7613 ,  Y10S438/962

摘要： The invention concerns a method for making a microstructure comprising an island (30) of material confined between two electrodes (32) forming tabs, the island of material having two lateral flanks parallel to and two lateral flanks perpendicular to the tabs. The invention is characterised in that the lateral flanks of the island are defined by etching at least a layer (16), called template layer, and the tabs are formed by damascening. The invention is useful for making transistors and storage units.

公开(公告)号：EP1433206A1

公开(公告)日：2004-06-30

申请号：EP02800173.3

申请日：2002-10-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： FRABOULET, David ,  DELEONIBUS, Simon40, allée des Giteaux

IPC分类号： H01L29/76

CPC分类号： H01L29/0895 ,  B82Y10/00 ,  H01L29/66439 ,  H01L29/7613 ,  H01L49/006 ,  Y10S438/962

摘要： The invention relates to a Coulomb blockade transistor comprising the following on a substrate: a stack of channel layers (22c, 22i) forming at least one quantum dot; a source (12) and a drain (80) which are connected to the quantum dot by means of tunnel junctions and which are stacked with the channel layers; and at least one gate (60) which is disposed opposite at least one side of the stack.