摘要:
A reliable, modular, production quality F 2 excimer laser capable of producing, at repetition rates in the range of 1,000 to 2,000 Hz or greater, laser pulses with pulse energies greater than 10 mJ with a full width half, maximum bandwidth of about 1 pm or less at wavelength in the range of 157 nm. Laser gas concentrations are disclosed for reducing unwasted infrared emissions from the laser. Also disclosed are UV energy detectors which are substantially insensitive to infrared light. Preferred embodiments of the present invention can be operated in the range of 1000 to 4000 Hz with pulse energies in the range of 10 to 5 mJ with power outputs in the range of 10 to 40 watts. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.1 µm or less. Replaceable modules include a laser chamber and a modular pulse power system. In a preferred embodiment the laser was tuned to the F 2 157.6 nm line using a set of two external prisms. In a second preferred embodiment the laser is operated broad band and the 157.6 nm line is selected external to the resonance cavity. In a third preferred embodiment a line width of 0.2 pm is provided using injection seeding. Another embodiment utilizes a grating for line selection and increases the tuning range by operating the laser at a pressure in excess of 4 atmospheres.
摘要:
A reliable, modular, production quality F 2 excimer laser capable of producing, at repetition rates in the range of 1,000 to 2,000 Hz or greater, laser pulses with pulse energies greater than 10 mJ with a full width half, maximum bandwidth of about 1 pm or less at wavelength in the range of 157 nm. Laser gas concentrations are disclosed for reducing unwasted infrared emissions from the laser. Also disclosed are UV energy detectors which are substantially insensitive to infrared light. Preferred embodiments of the present invention can be operated in the range of 1000 to 4000 Hz with pulse energies in the range of 10 to 5 mJ with power outputs in the range of 10 to 40 watts. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.1 µm or less. Replaceable modules include a laser chamber and a modular pulse power system. In a preferred embodiment the laser was tuned to the F 2 157.6 nm line using a set of two external prisms. In a second preferred embodiment the laser is operated broad band and the 157.6 nm line is selected external to the resonance cavity. In a third preferred embodiment a line width of 0.2 pm is provided using injection seeding. Another embodiment utilizes a grating for line selection and increases the tuning range by operating the laser at a pressure in excess of 4 atmospheres.
摘要:
An apparatus comprising: a gas discharge laser system comprising: a first gas discharge laser producing an output seed laser beam of pulses, comprising a first laser chamber within an oscillator cavity of the first gas discharge laser; a bandwidth selection and line narrowing mechanism within the oscillator cavity of the first gas discharge laser; and a second gas discharge laser for amplifying the seed laser beam pulses.
摘要:
An apparatus comprising: a gas discharge laser system comprising: a first gas discharge laser producing an output seed laser beam of pulses, comprising a first laser chamber within an oscillator cavity of the first gas discharge laser; a bandwidth selection and line narrowing mechanism within the oscillator cavity of the first gas discharge laser; and a second gas discharge laser for amplifying the seed laser beam pulses.