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公开(公告)号：EP4369408A1
公开(公告)日：2024-05-15
申请号：EP23198686.0
申请日：2023-09-21
CPC分类号： H01L29/407 , H01L29/0653 , H01L29/7835 , H01L29/404
摘要： The present disclosure relates to semiconductor structures and, more particularly, to a transistor with a metal field plate contact and methods of manufacture. The structure includes: a gate structure (14) on a semiconductor substrate (12); a shallow trench isolation structure (18) within the semiconductor substrate; and a contact (22) extending from the gate structure and into the shallow trench isolation structure.
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公开(公告)号：EP4428924A1
公开(公告)日：2024-09-11
申请号：EP24152505.4
申请日：2024-01-18
IPC分类号： H01L29/06 , H01L21/329 , H01L29/87
CPC分类号： H01L29/0649 , H01L29/87 , H01L29/66121
摘要： The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; a plurality of shallow trench isolation structures extending into the first well and the second well; and a deep trench isolation structure between the plurality of shallow trench isolation structures and extending into the semiconductor material deeper than the plurality of shallow trench isolation structures.
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公开(公告)号：EP4235796A1
公开(公告)日：2023-08-30
申请号：EP22205699.6
申请日：2022-11-07
IPC分类号： H01L29/06 , H01L29/08 , H01L29/66 , H01L29/732
摘要： A semiconductor structure comprising: a dielectric layer (162); an emitter region (140) comprising: a first emitter portion (141) extending through the dielectric layer (162); and a second emitter portion (142) on the first emitter portion and further extending laterally onto the dielectric layer (162); and an additional dielectric layer (163) on the second emitter portion, wherein the dielectric layer (162), the second emitter portion (142), and the additional dielectric layer (163) are wider than the first emitter portion (141), and wherein at least a section of the second emitter portion (142) is narrower than the dielectric layer (162) and the additional dielectric layer (163). Preferably, the second emitter portion (142) increases in width between the dielectric layer (162) and the additional dielectric layer (163)
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公开(公告)号：EP4421874A1
公开(公告)日：2024-08-28
申请号：EP24152507.0
申请日：2024-01-18
IPC分类号： H01L29/06 , H01L29/16 , H01L21/329 , H01L29/87
CPC分类号： H01L29/87 , H01L29/66121 , H01L29/0649 , H01L29/1604
摘要： The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; and a porous semiconductor region extending in the first well and the second well.
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公开(公告)号：EP4254505A1
公开(公告)日：2023-10-04
申请号：EP22198020.4
申请日：2022-09-27
发明人： ABOU-KHALIL, Michel , SHANK, Steven , VALLETT, Aaron , Mc TAGGART, Sarah , KRISHNASAMY, Rajendran
IPC分类号： H01L29/10 , H01L29/423 , H01L29/78 , H01L21/336
摘要： A structure comprising: a semiconductor substrate including a first surface, a first recess in the first surface, and a second surface inside the first recess; a shallow trench isolation region extending from the first surface into the semiconductor substrate, the shallow trench isolation region positioned to surround an active device region including the first recess; and a field-effect transistor including a gate electrode positioned on a portion of the second surface.
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公开(公告)号：EP4379811A3
公开(公告)日：2024-09-04
申请号：EP23199260.3
申请日：2023-09-25
IPC分类号： H01L29/778 , H01L21/337 , H01L29/06 , H01L29/40 , H01L29/10 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/1066 , H01L29/404 , H01L29/0657 , H01L29/66462
摘要： Semiconductor structures and, more particularly, a high-electron-mobility transistor and methods of manufacture thereof are disclosed. The structure includes: a gate structure (18, 22, 28); and a channel region (14, 16) under the gate structure, the channel region having a first portion including a first thickness and a second portion having a second thickness greater than the first thickness, the second portion being positioned remotely from the gate structure.
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公开(公告)号：EP4369396A1
公开(公告)日：2024-05-15
申请号：EP23198688.6
申请日：2023-09-21
IPC分类号： H01L23/525 , G11C17/16 , H01L23/34 , H10B20/25
CPC分类号： H01L23/5256 , H10B20/25 , G11C17/16 , H01L23/345
摘要： The present disclosure relates to semiconductor structures and, more particularly, to an e-fuse with metal fill structures and methods of manufacture. The structure includes: an insulator material; an e-fuse structure on the insulator material; a plurality of heaters on the insulator material and positioned on sides of the e-fuse structure; and conductive fill material within a space between the e-fuse structure and the plurality of heaters.
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公开(公告)号：EP4365956A1
公开(公告)日：2024-05-08
申请号：EP23196430.5
申请日：2023-09-11
发明人： DUTTA, Anupam , KRISHNASAMY, Rajendran , CHOPPALLI, Vvss Satyasuresh , JAIN, Vibhor , GAUTHIER JR., Robert J.
IPC分类号： H01L29/737 , H01L29/08 , H01L21/331
CPC分类号： H01L29/737 , H01L29/0821 , H01L29/66242
摘要： The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a heterojunction bipolar transistor comprising a collector region, a base region and an emitter region; and at least one non-single-crystal semiconductor region in the collector region of the heterojunction bipolar transistor.
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公开(公告)号：EP4421873A1
公开(公告)日：2024-08-28
申请号：EP24152278.8
申请日：2024-01-17
IPC分类号： H01L29/06 , H01L29/49 , H01L29/78 , H01L21/336 , H01L29/40
CPC分类号： H01L29/7835 , H01L29/4983 , H01L29/66659 , H01L29/0653 , H01L29/513 , H01L29/517 , H01L29/407
摘要： The present disclosure relates to semiconductor structures and, more particularly, to a device with workfunction metal in a drift region and methods of manufacture. The structure includes: a gate structure having at least a first workfunction metal in a channel region and a second workfunction metal, which is different from the first workfunction metal, in a trench in a drift region; and a sidewall spacer adjacent to the gate structure within the trench in the drift region.
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公开(公告)号：EP4379811A2
公开(公告)日：2024-06-05
申请号：EP23199260.3
申请日：2023-09-25
IPC分类号： H01L29/778 , H01L21/337 , H01L29/06 , H01L29/40 , H01L29/10 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/1066 , H01L29/404 , H01L29/0657 , H01L29/66462
摘要： Semiconductor structures and, more particularly, a high-electron-mobility transistor and methods of manufacture thereof are disclosed. The structure includes: a gate structure (18, 22, 28); and a channel region (14, 16) under the gate structure, the channel region having a first portion including a first thickness and a second portion having a second thickness greater than the first thickness, the second portion being positioned remotely from the gate structure.
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