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公开(公告)号：EP0445488A1
公开(公告)日：1991-09-11
申请号：EP90810179.3
申请日：1990-03-08
发明人： Voegeli, Otto, Dr.
摘要： A semiconductor device, formed on a wafer (13), comprises an array of laser diodes (Q1,Q2), each emitting a beam (B1,B2) parallel to the wafer surface, and, integrated with the array, individually tilted deflecting mirrors (R1,R2) forming an array of virtual sources (Q1',Q2'). Compared to the physical separation of the laser diodes, the virtual sources are spaced more closely, they can even be coincident, thereby reducing the apparent spacing between the beam origins. The reflected beams (B1',B2') are substantially perpendicular to the wafer providing a "surface-emitting" device.
The required deflector configuration (54) can be fabricated in a single unidirectional process, the mirror positions and orientations being determined by proper segment geometry of the etch-mask.摘要翻译： 形成在晶片（13）上的半导体器件包括激光二极管阵列（Q1，Q2），每个激光二极管发射平行于晶片表面的光束（B1，B2），并与阵列一体化，单独倾斜的偏转镜 （R1，R2）形成虚拟源阵列（Q1'，Q2'）。 与激光二极管的物理分离相比，虚拟源更密切地间隔，甚至可以重合，从而减少光束起源之间的明显间隔。 反射光束（B1'，B2'）基本上垂直于提供“表面发射”装置的晶片。 可以在单个单向过程中制造所需的偏转器构造（54），反射镜位置和取向由蚀刻掩模的适当的段几何形状确定。
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公开(公告)号：EP0402556B1
公开(公告)日：1993-10-06
申请号：EP89810463.3
申请日：1989-06-16
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/16
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公开(公告)号：EP0410067B1
公开(公告)日：1993-09-22
申请号：EP89810577.0
申请日：1989-07-27
CPC分类号： H01S5/0264 , H01S5/0042 , H01S5/1082 , H01S5/14
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4.发明公开Integrated semiconductor diode laser and photodiode structure 失效Integrierte Halbleiterdiodenlaser und Photodiodenstruktur。
公开(公告)号：EP0410067A1
公开(公告)日：1991-01-30
申请号：EP89810577.0
申请日：1989-07-27
CPC分类号： H01S5/0264 , H01S5/0042 , H01S5/1082 , H01S5/14
摘要： Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.
摘要翻译： 具有光耦合激光二极管（11）和光电二极管（12A）的集成半导体结构，两个器件具有蚀刻的垂直刻面（16A，21）。 光电二极管相对于由激光器发射的入射光束（18A）具有空间不均匀的灵敏度分布。 这是由于距离激光刻面变化的距离和/或入射角的变化，导致光电二极管产生的光电流取决于光束的强度分布。 空间不均匀的灵敏度分布允许测量激光器的远场强度分布，并因此测量激光器相对于其模式稳定性的晶片上的筛选。
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6.发明公开A method for improving the flatness of etched mirror facets 失效Methode zur Verbesserung der EbenheitgeätzterSpiegelfacetten。
公开(公告)号：EP0402556A1
公开(公告)日：1990-12-19
申请号：EP89810463.3
申请日：1989-06-16
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/16
摘要： A method, and devices produced therewith, for improving the flatness of etched mirror facets (18) of integrated optic structures with non-planar stripe waveguides (17) such as ridge or groove diode lasers or passive devices like modulators and switches. The curvature in the mirror facet surface, occurring at the edges of the waveguide due to topographical, lithographical and etch process effects, that causes detrimental phase distortions, is avoided by widening the waveguide end (23) near the mirror surface (18) thereby shifting the curved facet regions away from the light mode region (24) to surface regions (29) where curvature is not critical.
摘要翻译： 一种方法及其制造的装置，用于改善具有诸如脊或沟槽二极管激光器的非平面条纹波导（17）或诸如调制器和开关的无源器件的集成光学结构的蚀刻镜面（18）的平坦度。 通过加宽靠近镜表面（18）的波导端（23）来避免由于形貌，光刻和蚀刻过程效应而在波导的边缘处出现的造成有害相位失真的镜面表面中的曲率，从而移位 远离光模式区域（24）到曲率不重要的表面区域（29）的弯曲小面区域。
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