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公开(公告)号：EP0185782B1
公开(公告)日：1989-03-15
申请号：EP84115848.8
申请日：1984-12-28
IPC分类号： G02B21/00
CPC分类号： G01Q60/22 , G02B6/04 , G02B6/4246 , G02B21/02
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2.发明公开Opto-electronic light emitting semiconductor device 失效Optoelektronisches lichtemittierendes Halbleiterbauelement。
公开(公告)号：EP0406506A1
公开(公告)日：1991-01-09
申请号：EP89810515.0
申请日：1989-07-07
发明人： Harder, Christoph Stephan, Dr. , Meier, Heinz Peter, Dr. , Van Zeghbroeck, Bart Jozef , Walter, Willi
CPC分类号： H01S5/028 , H01L27/15 , H01L31/173 , H01S5/0264
摘要： Opto-electronic light emitting device (30) epitaxially grown in III-V technology. It consists of a light emitting element (10), such as a diode laser or a LED, arranged back-to-back on a pn-junction diode (35), e.g., a PIN diode structure. A common middle layer (33) is transparent for the emitted wavelength and allows strong optical coupling (of at least 50 %) of the spontaneous isotropic radiation emitted by the light emitting element (10) to the diode (35) where the light is absorbed and recuperated for feedback to the light emitting element. The diode can be operated either as a photodiode or as a solar cell (by applying either a reverse- or a forward-bias voltage) resulting in regaining of either current or energy.
摘要翻译： 在III-V技术中外延生长的光电子发光器件（30）。 它由例如PIN二极管结构在pn结二极管（35）上背对背地布置的诸如二极管激光器或LED的发光元件（10）组成。 公共中间层（33）对于所发射的波长是透明的，并且允许由发光元件（10）发射到二极管（35）的自发各向同性辐射的强耦合（至少50％），其中光被吸收 并且恢复以用于反馈到发光元件。 二极管可以作为光电二极管或太阳能电池（通过施加反向或正向偏置电压）来操作，导致电流或能量的恢复。
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3.发明公开
公开(公告)号：EP0208795A1
公开(公告)日：1987-01-21
申请号：EP85108694.2
申请日：1985-07-12
CPC分类号： H01L29/0891 , H01L29/812 , Y10S438/969
摘要： A method for the fabrication of self-aligned MESFET structures (30) with a recessed refractory submicron gate. After channel formation (32) on a SI substrate (31), which may consist of a III-V compound semiconductor such as GaAs, with subsequent annealing the refractory gate (33G) is deposited and patterned. This is followed by the overgrowth of a highly doped contact layer of e.g. GaAs using MOCVD or MBE processes resulting in poly-crystalline material over the gate "mask" and in mono-crystalline material (34S, 34D) on exposed semiconductor surfaces. Next, the poly-crystalline material is removed in a selective etch process, this step being followed by the deposition of source and drain electrodes (35S, 35D). In order to further improve process reliability, insulating sidewalls (43-43) can be provided at the vertical edges of the gate (33G) to avoid source-gate and drain-gate shorts.
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公开(公告)号：EP0410067B1
公开(公告)日：1993-09-22
申请号：EP89810577.0
申请日：1989-07-27
CPC分类号： H01S5/0264 , H01S5/0042 , H01S5/1082 , H01S5/14
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5.发明公开Integrated semiconductor diode laser and photodiode structure 失效Integrierte Halbleiterdiodenlaser und Photodiodenstruktur。
公开(公告)号：EP0410067A1
公开(公告)日：1991-01-30
申请号：EP89810577.0
申请日：1989-07-27
CPC分类号： H01S5/0264 , H01S5/0042 , H01S5/1082 , H01S5/14
摘要： Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.
摘要翻译： 具有光耦合激光二极管（11）和光电二极管（12A）的集成半导体结构，两个器件具有蚀刻的垂直刻面（16A，21）。 光电二极管相对于由激光器发射的入射光束（18A）具有空间不均匀的灵敏度分布。 这是由于距离激光刻面变化的距离和/或入射角的变化，导致光电二极管产生的光电流取决于光束的强度分布。 空间不均匀的灵敏度分布允许测量激光器的远场强度分布，并因此测量激光器相对于其模式稳定性的晶片上的筛选。
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公开(公告)号：EP0185782A1
公开(公告)日：1986-07-02
申请号：EP84115848.8
申请日：1984-12-28
IPC分类号： G02B21/00
CPC分类号： G01Q60/22 , G02B6/04 , G02B6/4246 , G02B21/02
摘要： The waveguide comprises a transparent body (13) having a very sharp point at one end and being coated with a first opaque layer (14) such as metal. Said opaque layer (14) carries a layer (15) of an optically transparent material which, in turn, is covered by a second opaque layer (16). The apex of the point is removed so as to expose said transparent body (13) in a first aperture (18) and to expose said transparent layer (15) in a second aperture 17, said first aperture occupying an area below 0,01µm 2 .
Light entering the transparent body (13) from its remote end is shone onto an object (4), the reflected light enters said second aperture (17) and is guided to a light detector (19) for further processing.
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