摘要:
A physical sensor component includes a housing (110) having a cavity (112), a pressure sensor device (120) mounted in the cavity of the housing, and a chemically selective and physically selective filter (153) overlying the cavity of the housing and separated from the pressure sensor device.
摘要:
A media compatible microsensor structure (11) for sensing an environmental condition in a harsh media includes an inorganic protective film (17) covering portions of the structure that will be exposed to the harsh media, e.g. the walls of a semi-conductor pressure sensor cavity. E.g. a silicon oxide, nitride, or carbide film is formed by plasma enhanced chemical vapour deposition (PECVD) below 450 or 200 degrees Celsius with a thickness in a range from 0.2 to 1.5 micro meters. Also metals or their silicides may be used: Al,Au,Pt,V,W,Ti,Cr,Ni.
摘要:
A physical sensor component includes a housing (110) having a cavity (112), a pressure sensor device (120) mounted in the cavity of the housing, and a chemically selective and physically selective filter (153) overlying the cavity of the housing and separated from the pressure sensor device.
摘要:
A vertically integrated sensor structure (60) includes a base substrate (71) and a cap substrate (72) bonded to the base substrate (71). The base substrate (71) includes a transducer (78) for sensing an environmental condition. The cap substrate (72) includes electronic devices (92) formed on one surface to process output signals from the transducer (78). The sensor structure (60) provides an integrated structure that isolates sensitive components from harsh environments.