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    ÜBERWACHUNGSVORRICHTUNG UND VERFAHREN FÜR EIN IN-SITU MESSEN VON WAFERDICKEN ZUM ÜBERWACHEN EINES DÜNNENS VON HALBLEITERWAFERN SOWIE DÜNNUNGSVORRICHTUNG MIT EINER NASSÄTZEINRICHTUNG UND EINER ÜBERWACHUNGSVORRICHTUNG
    2.
    发明公开
    ÜBERWACHUNGSVORRICHTUNG UND VERFAHREN FÜR EIN IN-SITU MESSEN VON WAFERDICKEN ZUM ÜBERWACHEN EINES DÜNNENS VON HALBLEITERWAFERN SOWIE DÜNNUNGSVORRICHTUNG MIT EINER NASSÄTZEINRICHTUNG UND EINER ÜBERWACHUNGSVORRICHTUNG 有权
    ÜBERWACHUNGSVORRICHTUNGUND VERFAHRENFÜREIN IN-SITU MESSEN VON WAFERDICKEN ZUMÜBERWACHENEINESDÜNNENSVON HALBLEITERWAFERN SOWIEDÜNNUNGSVORRICHTUNGMIT EINERNASSÄTZEINRICHTUNGUND EINERÜBERWACHUNGSVORRICHTUNG

    公开(公告)号：EP2438396A1

    公开(公告)日：2012-04-11

    申请号：EP11704475.0

    申请日：2011-01-10

    申请人： Precitec Optronik GmbH ,  Dusemund Pte. Ltd.

    发明人： DUSEMUND, Claus ,  SCHÖNLEBER, Martin ,  MICHELT, Berthold ,  DIETZ, Christoph

    IPC分类号： G01B11/06 ,  H01L21/00

    CPC分类号： H01L21/6708 ,  G01N21/55 ,  G01N21/9501 ,  H01L21/67023

    摘要： According to the invention, a monitoring device (12) is created for monitoring a thinning of at least one semiconductor wafer (4) in a wet etching unit (5), wherein the monitoring device (12) comprises a light source (14), which is designed to emit coherent light of a light wave band for which the semiconductor wafer (4) is optically transparent. The monitoring device (12) further comprises a measuring head (13), which is arranged contact-free with respect to a surface of the semiconductor wafer (4) to be etched, wherein the measuring head (13) is designed to irradiate the semiconductor wafer (4) with the coherent light of the light wave band and to receive radiation (16) reflected by the semiconductor wafer (4). Moreover, the monitoring device (12) comprises a spectrometer (17) and a beam splitter, via which the coherent light of the light wave band is directed to the measuring head (13) and the reflected radiation is directed to the spectrometer (17). The monitoring device (12) further comprises an evaluation unit (18), wherein the evaluation unit (18) is designed to determine a thickness d(t) of the semiconductor wafer (4) from the radiation (16) reflected by the semiconductor wafer (4) during thinning of the semiconductor wafer (4) by means of a method that is selected from the group consisting of a lD-se FDOCT method, a lD-te FDOCT method and a lD-se TDOCT method.

    摘要翻译： 根据本发明，监测装置（12）被创建用于监测湿法蚀刻单元（5）中的至少一个半导体晶片（4）的变薄，其中监测装置（12）包括光源（14） 其设计成发射半导体晶片（4）光学透明的光波段的相干光。 监测装置（12）还包括测量头（13），其相对于待蚀刻的半导体晶片（4）的表面无接触地布置，其中测量头（13）被设计成照射半导体晶片 晶片（4）与光波段的相干光接收并且接收由半导体晶片（4）反射的辐射（16）。 此外，监测装置（12）包括分光计（17）和分束器，光波段的相干光通过该分束器被引导到测量头（13），并且被反射的辐射被引导到分光计（17） 。 监测装置（12）还包括评估单元（18），其中评估单元（18）被设计成根据由半导体晶片（16）反射的辐射（16）确定半导体晶片（4）的厚度d（t） （4）在通过从由1D-se FDOCT方法，1D-te FDOCT方法和1D-se TDOCT方法组成的组中选择的方法进行半导体晶片（4）的减薄期间进行。

    VERFAHREN ZUM MESSEN DER EINDRINGTIEFE EINES LASERSTRAHLS IN EIN WERKSTÜCK SOWIE LASERBEARBEITUNGSVORRICHTUNG
    4.
    发明公开
    VERFAHREN ZUM MESSEN DER EINDRINGTIEFE EINES LASERSTRAHLS IN EIN WERKSTÜCK SOWIE LASERBEARBEITUNGSVORRICHTUNG 审中-公开
    方法用于测量激光束穿透深度工件与激光处理装置

    公开(公告)号：EP3049755A1

    公开(公告)日：2016-08-03

    申请号：EP14766909.7

    申请日：2014-09-13

    申请人： Precitec Optronik GmbH

    发明人： SCHÖNLEBER, Martin ,  KOGEL-HOLLACHER, Markus ,  BAUTZE, Thibault ,  FRAAS, Christian

    IPC分类号： G01B9/02 ,  B23K26/02

    摘要： The invention relates to a method for measuring the depth of penetration of a laser beam (19) into a workpiece (24, 26), wherein the laser beam is focused in a focal spot (22) by means of a focusing optical unit (14) arranged in a machining head. The focal spot produces a vapor capillary (88) in the workpiece. An optical coherence tomograph (40) produces a first measurement beam (70a) and a second measurement beam (70b). The first measurement beam (70a) is directed at a first measurement point (MPa) at the base of the vapor capillary (88) in order to thereby measure a first distance (a1) between a reference point and the first measurement point (MPa). At the same time, the second measurement beam (70b) is directed at a second measurement point (MPb) on a surface (92) of the workpiece (24) which faces the machining head (14) and which is outside of the vapor capillary (88) in order to thereby measure a second distance (a2) between the reference point and the second measurement point (MPb). The depth of penetration (d) of the laser beam then results as the difference between the second distance (a2) and the first distance (a1).

    OPTISCHE MESSVERFAHREN UND MESSVORRICHTUNG MIT EINEM MESSKOPF ZUM ERFASSEN EINER OBERFLACHENTOPOGRAPHIE MITTELS KALIBRIERUNG DER ORIENTIERUNG DES MESSKOPFS
    8.
    发明公开
    OPTISCHE MESSVERFAHREN UND MESSVORRICHTUNG MIT EINEM MESSKOPF ZUM ERFASSEN EINER OBERFLACHENTOPOGRAPHIE MITTELS KALIBRIERUNG DER ORIENTIERUNG DES MESSKOPFS 审中-公开
    光学测量方法和测量装置用探针用于检测了表面形貌，使用定向测量头的校准

    公开(公告)号：EP2920544A1

    公开(公告)日：2015-09-23

    申请号：EP13814625.3

    申请日：2013-11-14

    申请人： Precitec Optronik GmbH

    发明人： SCHÖNLEBER, Martin ,  MICHELT, Berthold ,  KUNKEL, Matthias

    IPC分类号： G01B9/02 ,  G01B11/25

    CPC分类号： G01B11/2441 ,  G01B9/02027 ,  G01B9/02091 ,  G01B11/026 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/50

    摘要： The invention relates to an optical measuring method for capturing a surface topography (1) of a measured object (2). To this end, a measuring device (3) is provided, comprising a measuring head (4) in a measuring head guiding device (5), for chromatic confocal capture of the surface topography (1) or for a spectral interferometric OCT distance measurement to the surface topography (1). Spectral light of a light source (6) is applied to the measured object (2) from a fibre array (7) comprising i fibres (8) from i measurement spots (12 to 15) via a common measuring head lens (10), forming a spot array (11) from i measurement spots (12 to 15). The i reflection spectra of the i measurement channels are then captured and digitalised. The digitalised reflection spectra are evaluated by calculating temporal variations of systematic measurement errors and temporally induced deviation movements of the measuring head guiding device (5), comprising the following steps: - capture of geometric distance values (a, b, c) of the i measurement channels and of the three-dimensional position values for the i measurement spots on a measured object surface at the time t(j); - capture of a local inclination of the measured object surface (16) relative to the measuring head (4) comprising at least three measurement spots (12, 13, 14) of a triangle (17), which are projected onto the measured object surface (16) for correction of the measurement values; - correlation of the local topographies by separating temporally induced deviation movements of the measuring head guiding device (5) by means of a three-dimensional acceleration sensor on the measuring head (4); - creation of the correct local topographies.

    摘要翻译： 本发明涉及在光学测量过程，用于获取测量对象的表面形貌。 为此，与在测量头引导装置的测量头的测量装置提供了一种用于彩色共采集表面形貌的或用于光谱干涉十月采集表面形貌的距离。 首先，从一个光纤阵列，其中i的测量点的I纤维的光源的光谱的宽带光经由公共测量头光学器件引导到测量对象，与地层的I测量点的光点阵列的。 我第i测量通道的反射光谱获取然后和数字化。 最后，将数字化的反射光谱进行评估并除去系统测量误差和测量头引导装置的时间相关偏差动作的时间变化的。

    MATERIALBEARBEITUNGSVORRICHTUNG MIT IN-SITU MESSEN DES BEARBEITUNGSABSTANDS
    9.
    发明公开
    MATERIALBEARBEITUNGSVORRICHTUNG MIT IN-SITU MESSEN DES BEARBEITUNGSABSTANDS 有权
    与工作距离原位测量材料处理装置

    公开(公告)号：EP2569123A1

    公开(公告)日：2013-03-20

    申请号：EP11726186.7

    申请日：2011-05-10

    申请人： Precitec Optronik GmbH

    发明人： SCHÖNLEBER, Martin

    IPC分类号： B23K26/04 ,  B23K26/08 ,  B23K26/03 ,  G01B11/14 ,  G01B9/02

    CPC分类号： G01N21/255 ,  B23K26/032 ,  B23K26/048 ,  B23K26/082 ,  G01B9/02007 ,  G01B9/02036 ,  G01B9/02044 ,  G01B9/02063 ,  G01B9/02091 ,  G01B2290/70

    摘要： The invention relates to a material-working device (1) with working beams (4) of a beam generator (5) and with in-situ measurement of the working distance (a) between the beam generator (5) and the workpiece (6). The material-working device (1) has for this purpose a working laser (13) with working beams (4). A laser scanner (14) comprising a two-dimensional deflecting device with scanner mirrors (31, 32) is arranged downstream of a working laser (13). An automatic refocusing device for varying working distances (a(t)) is provided. A sensor device (16) comprising a spectrometer (17) and at least two sensor light sources generates measuring beams (18), which by means of the laser scanner (14) and a lens system (19) jointly sense the working area (20) of the workpiece (6) while recording the workpiece distance (a). The measuring beams (18) of the sensor light sources (11, 12) are linearly polarized and are coupled by means of an optical coupling element (21) into the path of the working beam (25) of the laser scanner (14) of the material-working device (1) with crossed directions of polarization and in a collimated state.