SEMICONDUCTOR DEVICE
    2.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开
    HALBLEITERBAUELEMENT

    公开(公告)号:EP3107123A4

    公开(公告)日:2017-02-22

    申请号:EP14882078

    申请日:2014-09-08

    摘要: A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.

    摘要翻译: 本发明提供一种半导体装置,其具备设置有IGBT的主IGBT区域,设置有二极管的主二极管区域,设置有IGBT的检测IGBT区域和设置有二极管的检测二极管区域。 本体区域和阳极区域之间的间隙长于本体区域和阳极区域之间的n型区域中的电子迁移率和电子寿命的乘积。 感测二极管区域侧上的集电极区域的端部和体区域之间的间隙比端部和体区域之间的n型区域中的电子迁移率和电子寿命的乘积长。