利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

212 条记录 (耗时 0.018 秒)

    FILM DEPOSITION DEVICE AND MANUFACTURING METHOD
    1.
    发明公开
    FILM DEPOSITION DEVICE AND MANUFACTURING METHOD 审中-实审

    公开(公告)号：EP4417732A1

    公开(公告)日：2024-08-21

    申请号：EP22880594.1

    申请日：2022-06-29

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： SAKATSUME Takahiro

    IPC分类号： C23C16/448 ,  C23C16/40 ,  H01L21/365 ,  H01L21/368

    CPC分类号： C23C16/448 ,  H01L21/02107 ,  C23C16/40

    摘要： The present invention is a film-forming apparatus including: a mist-generating member to atomize a raw material solution into a mist; a carrier gas-supplying member to supply a carrier gas for carrying the mist generated in the mist-generating member; and a film-forming member to thermally treat the mist carried with the carrier gas to form a film, wherein the film-forming member includes: a film-forming chamber; a substrate-placing member provided inside the film-forming chamber; a nozzle to supply the mist toward the inside of the film-forming chamber; and a gas-discharging member to discharge an exhaust gas from the inside to an outside of the film-forming chamber, and a difference in a height position between an inner face of a ceiling of the film-forming chamber and a substrate-placing face of the substrate-placing member is 0.15 cm or longer and 6.05 cm or shorter. This provides a film-forming apparatus that can form a film with excellent in-plane uniformity of film thickness by mist CVD.

    PLASMA COATING METHOD AND APPARATUS FOR SMALL COMPONENTS
    2.
    发明公开
    PLASMA COATING METHOD AND APPARATUS FOR SMALL COMPONENTS 审中-公开

    公开(公告)号：EP4401110A1

    公开(公告)日：2024-07-17

    申请号：EP23151135.3

    申请日：2023-01-11

    申请人： Molecular Plasma Group S.A.

    发明人： HEYBERGER, Régis ,  SCHONS, Bertrand ,  NISOL, Bernard

    IPC分类号： H01J37/32 ,  C23C16/448

    CPC分类号： H01J37/32357 ,  H01J37/32403 ,  C23C16/448 ,  H01J37/32825

    摘要： The present invention concerns an apparatus for plasma coating three-dimensional (3D) objects with a full coating, comprising a plasma reactor and an essentially cylindrically shaped afterglow chamber, wherein the plasma reactor is configured to provide a precursor-comprising plasma flow at a plasma reactor outlet, wherein the afterglow chamber comprising a plasma inlet, an object inlet, an azimuthal flow inlet and a set of gas outlets, wherein: - the afterglow chamber is configured to receive and hold a set of 3D objects which are to be coated; - the object inlet is configured to allow the 3D objects to be inserted into and extracted out of the afterglow chamber, whereby the object inlet is sealable; - the plasma inlet is in fluid connection with the plasma reactor outlet and is configured to allow a precursor-comprising plasma flow to enter the afterglow chamber, - the azimuthal flow inlet is configured to ensure an essentially azimuthal flow within the afterglow chamber upon providing a gas flow to said azimuthal flow inlet, and - the set of gas outlets are configured to allow evacuation of surplus gas from the afterglow chamber such that both the precursor-comprising plasma flow and the azimuthal flow can be maintained.

    APPARATUS AND METHOD FOR FORMING FILM
    6.
    发明公开
    APPARATUS AND METHOD FOR FORMING FILM 审中-公开
    VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINES FILMS

    公开(公告)号：EP3051002A1

    公开(公告)日：2016-08-03

    申请号：EP15156678.3

    申请日：2015-02-26

    申请人： Flosfia Inc.

    发明人： Sasaki, Takahiro ,  Oda, Masaya ,  Hitora, Toshimi

    IPC分类号： C23C16/455 ,  B05B17/06 ,  C23C16/448

    CPC分类号： C23C16/45508 ,  B05B17/0615 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45502 ,  C23C16/45506 ,  C23C16/4586

    摘要： Provided is a film forming apparatus which is excellent in the film formation rate and is useful for performing mist CVD. A film forming apparatus includes an atomization/droplet-formation unit for turning a raw-material solution into a mist or droplets a raw-material solution, a carrying unit for carrying the mist or droplets generated in the atomization/droplet-formation unit onto a base using a carrier gas, and a film forming unit for treating the mist or droplets with heat to form a film on the base. The film forming unit is cylindrical or almost cylindrical and has an inlet for introducing the mist or droplets in a side surface thereof so that the mist or droplets is swirled to generate a swirling flow. And the film forming unit has an exhaust outlet in a top surface thereof.

    摘要翻译： 提供一种膜形成装置，其成膜速度优异并且可用于进行雾化CVD。 一种成膜装置包括用于将原料溶液转化为雾或液滴原料溶液的雾化/液滴形成单元，用于将雾化/液滴形成单元中产生的雾或液滴携带到 使用载气的基底，以及用于用热处理雾或液滴以在基底上形成膜的成膜单元。 成膜单元是圆柱形或几乎是圆柱形的，并且具有用于在其侧表面中引入雾或液滴的入口，使得雾或液滴旋转以产生旋流。 并且成膜单元在其顶表面中具有排气口。

    Verfahren zur Herstellung von Proezessgasen für die Dampfphasenabscheidung
    7.
    发明授权
    Verfahren zur Herstellung von Proezessgasen für die Dampfphasenabscheidung 有权
    一种生产工艺气体的用于气相沉积工艺

    公开(公告)号：EP2072149B1

    公开(公告)日：2013-11-20

    申请号：EP08022113.8

    申请日：2008-12-19

    申请人： Schott AG

    发明人： Haines, Dan ,  Bicker, Matthias Dr. ,  Bauer, Stefan Dr. ,  Lohmeyer, Manfred

    IPC分类号： G01F1/684 ,  B05D7/22 ,  B05D1/00 ,  C23C16/448 ,  C23C16/04 ,  C23C16/52 ,  G05D7/06 ,  G01F13/00

    CPC分类号： C23C16/52 ,  B05D1/60 ,  B05D1/62 ,  B05D7/22 ,  B05D2203/35 ,  C23C16/045 ,  C23C16/448 ,  G01F1/684 ,  G01F13/00 ,  G05D7/0635

    摘要： Liquefied gas (34) from a tank (3) passes via the dosing unit (5) through an evaporator (2) converting it to a gas. This is fed to a reactor (20). An energy source (21) produces a reactive zone (32) there. The reaction products are used to coat the workpiece (30). The mass flowrate of the gas in the reactor is adjusted by a unit controlling the flow of the liquid gas (40) into the evaporator. For plasma-assisted vapor phase deposition of layers onto workpieces, the reactor is evacuated by a pump (26). The gas is supplied to the evacuated region. Plasma is excited there, using an electromagnetic field. The products coat the workpiece. The volumetric flow set by dosing is preferably about 20 nl/min - 10 mu l/min. Dosing precision is preferably 0.3 mu l/min or better. The process gas component is mixed with a second gas in the evaporator (2). A mass flowrate sensor measures the flow of liquid gases to the evaporator. The evaporation rate exceeds the introduction rate into the evaporator. The pressure in the reactor is controlled using a throttle valve (24) in the vacuum line to the pump. The first process gas component is a metastable substance. It has no lasting stability at 130[deg] C, or at the temperature in the evaporator. A mixture of two components at least, is dosed in liquid form. A first process gas component is vaporized and supplied to the reactor. At a temperature of 130[deg] C, this has a vapor pressure preferably less than 50mbar. A polyether is a component of the first process gas. This is preferably a non-cyclic polyether, especially a mono-, di-, tri-, tetra-, penta-, or hexaethylene glycol-dimethyl ether, preferably tetraethylene glycol-dimethyl ether. It is vaporized as the first process gas component. A polyethylene glycol-containing- or polyethylene glycol-like coating is deposited on the workpiece. The pulse energy used, does not exceed 3 joules. An independent claim IS INCLUDED FOR corresponding apparatus.

    SIMPLE CHEMICAL VAPOR DEPOSITION SYSTEM AND METHODS FOR DEPOSITING MULTIPLE-METAL ALUMINIDE COATINGS
    10.
    发明授权
    SIMPLE CHEMICAL VAPOR DEPOSITION SYSTEM AND METHODS FOR DEPOSITING MULTIPLE-METAL ALUMINIDE COATINGS 有权
    简单的CVD系统和方法分离MULTIMETALLALUMINIDÜBERZÜGEN的

    公开(公告)号：EP1651793B1

    公开(公告)日：2009-02-11

    申请号：EP04820715.3

    申请日：2004-07-01

    申请人： Aeromet Technologies, Inc.

    发明人： FAIRBOURN, David, C.

    IPC分类号： C23C16/06 ,  C23C16/44 ,  C23C16/448

    CPC分类号： C23C16/029 ,  C23C16/08 ,  C23C16/448 ,  C23C16/4485 ,  C23C16/4488 ,  C23C28/321 ,  C23C28/3215 ,  Y02T50/67

    摘要： A chemical vapor deposition (CVD) system and method for applying an aluminide coating (34) constituted by two or more extrinsic metal components on a jet engine component (26). The aluminide coating (34) is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating (34) is provided as a distinct vapor phase reactant (37) from a receptacle (36) coupled by a closed communication path (40) with the reaction chamber (12) of the CVD system and free of a carrier gas. The aluminide coating (34) is formed by the chemical combination of the vapor phase reactant (37) with another vapor phase reactant (35) either created in situ in the reaction chamber (12) or supplied by a carrier gas to the reaction chamber (12) from a precursor source (60).