HIGH-TEMPERATURE TUBE FURNACE
    1.
    发明公开

    公开(公告)号:EP4443482A1

    公开(公告)日:2024-10-09

    申请号:EP21966041.2

    申请日:2021-12-02

    IPC分类号: H01L21/673 C23C16/458

    CPC分类号: C23C16/458 H01L21/673

    摘要: A high-temperature tube furnace comprises: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with through holes (1011); a gas supply pipe (2) communicating with the through holes (1011) of the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through holes (1011) of the top cover (101) of the process tube (1); a wafer boat (3) arranged in the process tube (1), and comprising a supporting frame (301) and supporting plates (302), the supporting plates (302) being distributed in multiple layers along the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on one supporting plate and each supporting plate supporting the entire bottom of the substrate (w). The multiple layers of supporting plates (302) are provided, and each supporting plate (302) supports the entire bottom of a substrate (w), thus avoiding defects of lattices in the substrates (w) caused by downward deformation of the substrates (w) during a high temperature process of 1200°C or above, and improving the yield of chips.