公开(公告)号：EP0622841A4

公开(公告)日：1994-11-09

申请号：EP92924871

申请日：1992-12-02

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  MAKIHARA KOJI

IPC分类号： B65D81/20 ,  H01L21/00 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67754 ,  H01L21/67017 ,  H01L21/67389 ,  H01L21/67393

摘要： A method and apparatus for transportation of wafers from one stage to another in a manufacturing process while protecting clean silicon surfaces and thin films on them from contamination through the air. The apparatus includes a wafer container (101) having a gas inlet (103) and a gas outlet (112), an inert gas container (103) having an inert gas sealed therein, and a piping (114) for connecting the gas inlet (113) of the wafer container to the inert gas container (103) and for sending the inert gas in the inert gas container to the wafer container (114), and wafers are transported while the inside of the wafer container is constantly purged by introducing the inert gas.

公开(公告)号：EP0725160A4

公开(公告)日：1994-11-07

申请号：EP92923995

申请日：1992-11-20

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： C23C8/02 ,  C23C8/18 ,  C23C8/14 ,  C22C38/44

CPC分类号： C23C8/18 ,  C23C8/02

摘要： A method of readily forming a passive oxide film based on chromium oxide characterized by subjecting stainless steel to electrolytic polishing, composite electrolytic polishing and fluidized abrasive polishing, baking the steel thus treated in an inactive gas to remove moisture from its surface, and heat treating the resultant steel at 300 to 600 DEG C in a gaseous atmosphere comprising hydrogen or a mixture thereof with an inactive gas and containing less than 4 ppm of oxygen or less than 500 ppb of moisture. An oxidized stainless steel characterized by comprising a stainless steel having a crystal grain number of 6 or above and, formed on the surface thereof, a passive oxide film based on chromium oxide, wherein the oxide film has a thickness of 5 nm or above and the atomic ratio of chromium to iron on the outermost layer of the film is 1 or above.

公开(公告)号：EP1630858A4

公开(公告)日：2009-11-25

申请号：EP04717277

申请日：2004-03-04

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU

IPC分类号： H01L21/00 ,  H01L21/677 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/31

CPC分类号： H01L21/02052 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67173

公开(公告)号：EP1593751A4

公开(公告)日：2008-08-06

申请号：EP04702064

申请日：2004-01-14

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SHIRAI YASUYUKI ,  KITANO MASAFUMI

IPC分类号： C23C16/44 ,  C23C8/36 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  C22C21/06 ,  H05H1/46

CPC分类号： H01J37/32467 ,  C23C8/36

摘要： A method of plasma treatment which comprises allowing an article comprising an aluminum alloy to be treated to have a predetermined temperature, introducing a gas containing an oxygen gas and krypton into a treating chamber from a supplying source for a treating gas, and then generating a plasma by a micro wave in the treating chamber, to thereby generate oxygen radicals and subject the surface of the article to be treated to a radical oxidation treatment. The method allows the formation of an oxide coating film being dense and improved in corrosion resistance on the surface of the article to be treated.

公开(公告)号：EP1628337A4

公开(公告)日：2008-07-16

申请号：EP04745284

申请日：2004-05-24

申请人： OHMI TADAHIRO ,  YAZAKI CORP

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  AKAHORI HIROSHI ,  NII KEIICHI ,  WATANABE TAKANORI

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L21/28 ,  H01L21/304 ,  H01L21/318 ,  H01L29/04 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28211 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734 ,  H01L29/7813

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

公开(公告)号：EP1626439A4

公开(公告)日：2008-04-16

申请号：EP04733935

申请日：2004-05-19

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： H01L21/31 ,  H01L21/314 ,  C23C16/02 ,  C23C16/26 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/0212 ,  C23C16/0245 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3127

摘要： With a view toward enhancing the adhesion between a fluorinated carbon film and a substratum film, there is provided a method of forming a fluorinated carbon film on a substrate to be treated, characterized in that the method comprises the first step of, by means of a substrate treating unit, effecting plasma excitation of a rare gas and carrying out surface treatment of the substrate with the plasma-excited rare gas and the second step of forming a fluorinated carbon film on the resultant substrate, the substrate treating unit including a microwave antenna electrically connected to a microwave power source.

公开(公告)号：EP1716912A4

公开(公告)日：2008-02-06

申请号：EP05704075

申请日：2005-01-25

申请人： TAIYO NIPPON SANSO CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HASEGAWA HIDEHARU ,  ISHIHARA YOSHIO ,  SUZUKI KATSUMASA

IPC分类号： B01D53/68 ,  B01J3/00 ,  B01J19/08 ,  B01J19/12

CPC分类号： B01J19/088 ,  B01J2219/0883 ,  B01J2219/0892 ,  B01J2219/0894

摘要： A method for treating an exhaust gas, which comprises the steps of introducing an exhaust gas being in an exited state in a facility for manufacture of a semiconductor device into a plasma treatment portion of a treating section under a reduced pressure, introducing the exhaust gas being maintained in an exited state by a plasma generating in the plasma treatment portion into a reactor in a removal reaction section, reacting the exhaust gas with a removing reaction agent comprised of particulate calcium oxide packed in the reactor and removing harmful gas components in the exhaust gas. The method may further include the step of supplying oxygen into the plasma treatment portion so as to subject the harmful gas components to oxidation decomposition in the presence of a plasma and then reacting the decomposed gas components with the removing reaction agent.

公开(公告)号：EP1655772A4

公开(公告)日：2007-12-26

申请号：EP04771570

申请日：2004-08-12

申请人： TOKYO ELECTRON LTD ,  ZEON CORP ,  OHMI TADAHIRO

发明人： KOBAYASHI YASUO ,  KAWAMURA KOHEI ,  OHMI TADAHIRO ,  TERANOTO AKINOBU ,  SUGIMOTO TATSUYA ,  YAMADA TOSHIRO ,  TANAKA KIMIAKI

IPC分类号： H01L21/314

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.

公开(公告)号：EP1030350A4

公开(公告)日：2007-10-31

申请号：EP99929744

申请日：1999-07-08

申请人： TAIYO NIPPON SANSO CORP ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  NAKAJIMA DAIJI ,  ISHIHARA YOSHIO

IPC分类号： B01D53/26 ,  F24F3/16 ,  F24F7/10 ,  F24F12/00 ,  F25J3/08 ,  H01L21/00 ,  H05F3/06

CPC分类号： B01D53/261 ,  B01D53/0446 ,  B01D53/75 ,  B01D53/869 ,  B01D2258/0216 ,  B01D2259/402 ,  F24F3/161 ,  H01L21/67017 ,  H01L21/67155 ,  Y10S414/14

摘要： A system for and a method of producing and supplying highly clean dry air, capable of producing and supplying highly clean dry air at a lower cost in and from a small plant, and being used by effectively circulating the same, the system comprising a clean room provided therein with transfer equipment having a storage and a transfer unit and with treatment equipment, a passage for supplying the highly clean dry air to either one or both of the transfer equipment and treatment equipment, and a passage for circulatingly supplying used highly clean dry air discharged from either one or both of the transfer equipment and treatment equipment to either one or both thereof, the circulating passage being connected to the transfer equipment and storage so as to circulatingly supply the used highly clean dry air therefrom to the storage.

公开(公告)号：EP1167574A4

公开(公告)日：2007-10-24

申请号：EP00900373

申请日：2000-01-13

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SHIRAI YASUYUKI ,  IKEDA NOBUKAZU ,  IDETA EIJI ,  MORIMOTO AKIHIRO ,  OGUSHI TETSUTARO ,  KONISHI TAKEHISA

IPC分类号： H01L21/28 ,  C23C8/02 ,  C23C26/00 ,  C23C30/00

CPC分类号： C23C8/02 ,  C23C26/00 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/31678

摘要： A metallic material having, formed thereon, a chromium oxide passive film, characterized in that the metallic material has a surface roughness (Ra) of 1,5 mu m or less and the passive film is formed by a method comprising coating the metallic material with chromium and then subjecting the resultant coated material to a heat treatment in an oxidizing gas atmosphere. The present invention can be used for forming a chromium oxide film which contains no oxide film of another metal and is excellent in corrosion resistance on an arbitrary type of metal at a low cost in a short period of time, and thus for providing a system for supplying a highly corrosive fluid in safety.