公开(公告)号：EP0909985A1

公开(公告)日：1999-04-21

申请号：EP98124750.5

申请日：1991-09-25

申请人： CANON KABUSHIKI KAISHA

发明人： Komatsu, Toshiyuki ,  Sato, Yasue ,  Kawate, Shin-Ichi

IPC分类号： G03F7/00 ,  C23C16/04 ,  H01L21/308

CPC分类号： H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139

摘要： The present invention provides a processing method which comprises the steps of subjecting the surface of a semiconductor substrate (701) or the surface of a substrate formed of a semiconductor, a metal or an insulator, to selective irradiation with a synchrotron orbit radiation (708a) so that electron donative properties of the surface are changed to give the desired pattern; and selectively depositing a metal film on the surface endowed with said electron donative properties. Furthermore, the present invention provides an apparatus for carrying out all the steps of fabricating a semiconductor device in a series of vacuum vessels capable of being evacuated, which comprises a load lock chamber (702); a film forming chamber; an etching chamber; a latent image forming chamber (707); a metal-film depositing chamber (713); a cleaning chamber; and a vacuum gate valve.

公开(公告)号：EP0908782A1

公开(公告)日：1999-04-14

申请号：EP98124754.7

申请日：1991-09-25

申请人： CANON KABUSHIKI KAISHA

发明人： Komatsu, Toshiyuki ,  Sato, Yasue ,  Kawate, Shin-Ichi

IPC分类号： G03F7/004 ,  C23C16/04 ,  H01L21/321

CPC分类号： H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139

摘要： The present invention provides a processing method which comprises the steps of subjecting a surface (302) to be processed, to selective irradiation with light in the desired gas atmosphere to form a surface-modified layer (304) in the desired region; and subjecting said surface to be processed, to dry etching using said surface-modified layer as an etching mask, wherein said surface-modified layer is annealed (305) before the step of said etching. Preferably said annealing is carried out by at least one of electromagnetic wave irradiation and heating.

摘要翻译： 一种处理方法包括：第一步骤，在作为样本的基板上沉积半导体，金属和绝缘体中的任一个的膜; 在第一步骤中沉积的膜的表面经受具有给定能量的光束照射以在表面上产生物理损伤的第二步骤; 在第二步骤中对产生物理损伤的膜表面进行第三步骤的选择性照射以部分地引起光化学反应，使得在膜表面上形成根据期望的器件结构的掩模图案; 以及第四步骤，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。

公开(公告)号：EP0908781A2

公开(公告)日：1999-04-14

申请号：EP98124751.3

申请日：1991-09-25

申请人： CANON KABUSHIKI KAISHA

发明人： Komatsu, Toshiyuki ,  Sato, Yasue ,  Kawate, Shin-Ichi

IPC分类号： G03F7/004 ,  H01L21/308 ,  C23C16/04

CPC分类号： H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139

摘要： The present invention provides a processing method comprising subjecting the surface of a substrate (803) to selective irradiation with light after the desired circuit pattern in an atmosphere of a modifying gas capable of modifying the surface, while maintaining the temperature (809,812) of said surface of the substrate to a given temperature range within which a pressure of said modifying gas reaches a saturated vapor pressure, to form on said surface of the substrate a surface-modified layer having a pattern structure; and etching the surface-unmodified layer using said surface-modified layer as a protective film. Furthermore, the present invention provides a processing apparatus comprising a light source, a latent image forming chamber (808), and an etching chamber (818); wherein said apparatus further comprises an evacuating means; said latent image forming chamber comprises a modifying gas feeding means (805b), a holder (802b), and an optical system (813,814,815,816); and said etching chamber comprises a holder (802c), and an etching gas feeding means (805d).

摘要翻译： 本发明提供了一种处理方法，包括在维持所述表面的温度（809,812）的同时，在能够改变表面的改性气体的气氛中，在期望的电路图案之后，使基板（803）的表面经受选择性照射 在所述给定温度范围内，所述改性气体的压力达到饱和蒸汽压，以在所述衬底的所述表面上形成具有图案结构的表面改性层; 以及使用所述表面改性层作为保护膜来蚀刻表面未改性层。 此外，本发明提供了一种包括光源，潜像形成室（808）和蚀刻室（818）的处理装置; 其中所述设备还包括抽空装置; 所述潜像形成室包括改性气体供给装置（805b），保持器（802b）和光学系统（813,814,815,816）; 并且所述蚀刻室包括保持器（802c）和蚀刻气体供给装置（805d）。

公开(公告)号：EP0783135A1

公开(公告)日：1997-07-09

申请号：EP97200014.5

申请日：1992-02-21

申请人： CANON KABUSHIKI KAISHA

发明人： Suzuki, Akiyoshi, c/o Canon Kabushiki Kaisha ,  Noguchi, Miyoko, c/o Canon Kabushiki Kaisha

IPC分类号： G03B27/53 ,  G03F9/00

CPC分类号： G03F7/7005 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125 ,  G03F7/70133 ,  G03F7/70241 ,  G03F7/70558

摘要： An imaging method for imaging a fine pattern having linear features extending along orthogonal first and second directions, is disclosed which method is characterized by: providing a light source having decreased intensity portions at a center thereof and on first and second axes defined to intersect with each other at the center and defined along the first and second directions, respectively; and illuminating the pattern with light from the light source. Also an apparatus according to the method.

摘要翻译： 一种用于对具有沿着正交的第一和第二方向延伸的线性特征的精细图案进行成像的成像方法，其特征在于：提供在其中心具有降低的强度部分的光源，以及限定为与每个方向相交的第一和第二轴线 另一个在中心并分别沿着第一和第二方向限定; 并用来自光源的光照射图案。 也是根据该方法的装置。

公开(公告)号：EP0477890A3

公开(公告)日：1996-12-18

申请号：EP91116309.5

申请日：1991-09-25

申请人： CANON KABUSHIKI KAISHA

发明人： Komatsu, Toshiyuki, Canon Kabushiki Kaisha ,  Sato, Yasue, Canon Kabushiki Kaisha ,  Kawate, Shin-Ichi, Canon Kabushiki Kaisha

IPC分类号： G03F7/20 ,  C23C16/04 ,  H01L21/00 ,  G03F7/004

CPC分类号： H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139

摘要： A processing method comprises:
   a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator;
   a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface;
   a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; and
   a fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

摘要翻译： 一种处理方法包括：第一步骤，在作为样本的基板上沉积半导体，金属和绝缘体中的任一个的膜; 在第一步骤中沉积的膜的表面经受具有给定能量的光束照射以在表面上产生物理损伤的第二步骤; 在第二步骤中对产生物理损伤的膜表面进行第三步骤的选择性照射以部分地引起光化学反应，使得在膜表面上形成根据期望的器件结构的掩模图案; 以及第四步骤，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。