公开(公告)号：EP0622835B1

公开(公告)日：2002-07-17

申请号：EP94302364.8

申请日：1994-03-31

申请人： FUJITSU LIMITED

发明人： Oguri, Hiroyuki, c/o Fujitsu Limited ,  Yokoyama, Teruo, c/o Fujitsu Limited

IPC分类号： H01L21/465 ,  H01L21/306 ,  C23F1/12

CPC分类号： H01J37/32972 ,  C23F4/00 ,  H01L21/30621 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66462

公开(公告)号：EP1086353A4

公开(公告)日：2001-08-22

申请号：EP99928616

申请日：1999-06-11

申请人： ON LINE TECHN INC

发明人： SPARTZ MARTIN L ,  BONANNO ANTHONY S ,  ROSENTHAL PETER A ,  RICHTER MATTHEW

IPC分类号： G01N21/77 ,  G01B9/02 ,  G01N21/35 ,  G01N33/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  C23C14/54 ,  H01J37/32

CPC分类号： G01N21/3504 ,  G01N21/85 ,  G01N2021/8411 ,  H01J37/32972

摘要： The gas withdrawn from a silicon wafer processing chamber, during wafer etching or chamber cleaning with a fluoride free radical-containing plasma, is analyzed optically. The apparatus consists of an infrared radiation source (10) mounted in a holder (12), to which is attached a heat sink (14). The holder (12) is mounted upon a source mirror housing (16), which contains a collimating mirror (18) supported on a source mirror holder (20). The filter sensor unit includes an endpoint instrument assembly mounting plate (22), which is mounted upon a detector mirror housing (24) and in turn contains detector focussing mirror (26) supported upon a detector mirror holder (28).

摘要翻译： 光学分析在用含氟化物自由基的等离子体进行晶片蚀刻或腔室清洁期间从硅晶片处理室取出的气体。 该设备包括安装在保持器（12）中的红外辐射源（10），散热器（14）连接到该保持器（12）。 支架（12）安装在源反射镜外壳（16）上，反射镜外壳（16）包含支撑在源反射镜支架（20）上的准直反射镜（18）。 过滤器传感器单元包括安装在检测器镜壳体（24）上并且又包含支撑在检测器镜支架（28）上的检测器聚焦镜（26）的端点仪器组件安装板（22）。

公开(公告)号：EP0821396A3

公开(公告)日：2000-09-20

申请号：EP97304913.3

申请日：1997-07-04

申请人： Applied Materials, Inc.

发明人： Buie, Melisa J. ,  Poslavsky, Leonid ,  Lewis, Jennifer

IPC分类号： H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334

摘要： The disclosure relates to a method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system (100). The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.

公开(公告)号：EP1014422A1

公开(公告)日：2000-06-28

申请号：EP99310023.9

申请日：1999-12-13

申请人： EATON CORPORATION

发明人： Denholm, Alec Stuart ,  Chen, Jiong, c/o Eaton Corporation ,  Graf, Michael Anthony ,  Kellerman, Peter Lawrence ,  Stejic, George, c/o Eaton Corporation

IPC分类号： H01J37/32 ,  C23C14/48 ,  C23C14/52

CPC分类号： H01J37/32412 ,  C23C14/48 ,  C23C14/544 ,  H01J37/3171 ,  H01J37/32935 ,  H01J37/32972

摘要： Apparatus and method for implanting ions into a workpiece surface. A concentration of ions (42) is produced. An optical analysis of the concentration of ions is performed and recorded. The constituency of the ion concentration is determined by comparing the optical analysis data (320) with a database (185) of records on a storage medium wherein the optical analysis data for given concentrations of ions have been stored for subsequent access. Ions from the ion concentration are caused to impact a workpiece surface. The dose of ions implanted into the workpiece (14) is measured. Implantation of the workpiece is stopped once an appropriate dose has been reached.

摘要翻译： 装置和用于将离子注入到工件表面的方法。 离子（42）的浓度被产生。 离子的浓度的光学分析中执行和记录。 离子浓度的选区确定性由光学分析数据（320）与用于worin离子的给定浓度的光谱分析数据已经被存储以供后续访问的记录在存储介质上的数据库（185）进行比较开采。 从离子浓度离子被促使冲击工件表面。 注入到工件（14）的离子的剂量进行测量。 工件的注入在适当的剂量一旦停止已经达到。

公开(公告)号：EP0836745A1

公开(公告)日：1998-04-22

申请号：EP96922605.0

申请日：1996-06-28

申请人： LAM RESEARCH CORPORATION

发明人： LIU, Alexander, F.

IPC分类号： H05H1 ,  H01J37 ,  H01L21

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01J37/32972

摘要： An improved method for specifying and reliably detecting endpoints in processes such as plasma etching, where the signal-to-noise ratio has been severely degraded due to factors such as 'cloudy window' and low ratio of reactive surface area to non-reactive surface area. The improved method of the invention samples signals produced by photo sensitive equipment, digitally filters and cross-correlates the data, normalizes the data using an average normalization value, and provides further noise reduction through the use of three modes of endpoint specification and detection. The three modes of endpoint specification and detection require a pre-specified number of consecutive samples to exhibit a certain behavior before the endpoint is deemed detected and the process terminated as a result. The three modes of endpoint specification and detection also permit a very fine control of the etch time by permitting the user to adjust the specified endpoint by gradations of the sampling period. The improved method of the invention is capable of being implemented on known apparatus.