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    Multifunction integrated optics chip having improved polarization extinction ratio
    101.
    发明公开
    Multifunction integrated optics chip having improved polarization extinction ratio 有权
    多功能一体机 - 智能手机芯片mitemonicultem Polarisationsausöschungsverhältnis

    公开(公告)号：EP1111413A1

    公开(公告)日：2001-06-27

    申请号：EP00311505.2

    申请日：2000-12-20

    申请人： LITTON SYSTEMS, INC.

    发明人： Gampp, Lorrie L. ,  Martinez, Arthur R. ,  Flaherty, Thomas ,  Geosling, Christine E. ,  Zimmerman, Gregory

    IPC分类号： G02B6/122 ,  G01C19/72

    CPC分类号： G02B6/126 ,  G02B6/122

    摘要： An integrated optics chip (70) includes an optical waveguide network (11) formed on a surface (106) of a substrate (72) formed of an electrooptically active material. The optical waveguide network (11) has an input facet (86) where an optical signal may be input to the optical waveguide network (11) and an output facet (88) where optical signals may be output from the optical waveguide network (11). A trench (74) is formed in the bottom surface (80) of the substrate and arranged to extend into the substrate toward the optical waveguide network (11). The trench (74) prevents light rays incident thereon from inside the substrate (72) from propagating to the output facet (88). In particular, the trench (74) prevents light scattered at the input facet (86) or from scattering centers in the optical waveguide network (11) from reflecting from the bottom surface (80) of the substrate (72) to the output facet (88). A cover (78) may be mounted to the top surface (106) of the substrate (72) to provide structural strength to the integrated optics chip (70). One or more side grooves (143, 144) may be formed in the sides of the substrate (72) and cover (78). A light absorbing material may be placed in the trench (74) and grooves (143, 144). A plurality of electrodes (150) may be formed on the substrate (72) adjacent the optical waveguide network (11), and a plurality of access electrodes (158, 160) may be formed on sides of the substrate (72) and cover (78) to provide electrical signals to the electrodes (150).

    摘要翻译： 集成光学芯片（70）包括形成在由电光活性材料形成的衬底（72）的表面（106）上的光波导网络（11）。 光波导网络（11）具有可将光信号输入到光波导网络（11）的输入面（86）和可从光波导网络（11）输出光信号的输出小面（88） 。 沟槽（74）形成在基板的底面（80）中，并布置成朝向光波导网络（11）延伸到基板中。 所述沟槽（74）防止从所述衬底（72）内部入射到其上的光线传播到所述输出小面（88）。 特别地，沟槽74防止在输入面（86）处散射的光或光波导网络（11）中的散射中心从基板（72）的底表面（80）反射到输出小面（ 88）。 盖（78）可以安装到基板（72）的顶表面（106），以向集成光学芯片（70）提供结构强度。 可以在基板（72）和盖（78）的侧面中形成一个或多个侧槽（143,144）。 光吸收材料可以放置在沟槽（74）和凹槽（143,144）中。 可以在与光波导网络（11）相邻的基板（72）上形成多个电极（150），并且可以在基板（72）和盖（...）的侧面上形成多个接入电极（158,160） 78）以向电极（150）提供电信号。

    Lateral trenching for cross coupling suppression in integrated optics chips
    102.
    发明公开
    Lateral trenching for cross coupling suppression in integrated optics chips 审中-公开
    Laterales Graben zurUnterdrückungder Kreuzkopplung in integriert-optischen Chips

    公开(公告)号：EP1111412A1

    公开(公告)日：2001-06-27

    申请号：EP00311503.7

    申请日：2000-12-20

    申请人： Litton Systems

    发明人： Gampp, Lorrie L. ,  Martinez, Arthur R.

    IPC分类号： G02B6/122 ,  G01C19/72

    CPC分类号： G02B6/126 ,  G02B6/122

    摘要： An optical waveguide network (11) is formed in a substrate (78) of an electrooptically active material. The optical waveguide network 11 has input and output facets (50, 52) where optical signals may be input to and output from the integrated optics chip (82). At least one lateral trench (84) is formed in the substrate (78). The lateral trench (84) is arranged to prevent light rays incident thereon from inside the substrate (78) from propagating to the output facet (52). The lateral trench (84) may be formed as a slot that extends toward the surface of the substrate (78) where the optical waveguide network (11) is formed, or the trench (84) may be parallel to the plane of the optical waveguides (11). The trench (84) may be formed in a surface (71, 77) that is either parallel or perpendicular to the plane of the optical waveguide network (11).

    摘要翻译： 光电波导网络（11）形成在电光活性材料的衬底（78）中。 光波导网络11具有输入和输出小平面（50,52），其中光信号可以被输入到集成光学芯片（82）并从其输出。 至少一个横向沟槽（84）形成在衬底（78）中。 横向沟槽（84）被布置成防止从衬底（78）内部入射到其上的光线传播到输出小面（52）。 横向沟槽（84）可以形成为朝向衬底（78）的形成光波导网络（11）的表面延伸的槽，或者沟槽（84）可以平行于光波导的平面 （11）。 沟槽（84）可以形成在与光波导网络（11）的平面平行或垂直的表面（71,77）中。

    Polarisation diversity section for coherent optical receiver
    104.
    发明公开
    Polarisation diversity section for coherent optical receiver 失效
    用于相干光接收器的偏振分集路径。

    公开(公告)号：EP0640854A3

    公开(公告)日：1999-08-18

    申请号：EP94203130.3

    申请日：1992-05-11

    申请人： Koninklijke PTT Nederland N.V.

    发明人： van der Tol, Johannes Jacobus Gerardus Maria

    IPC分类号： G02B6/14 ,  H04B10/12

    CPC分类号： G02B6/126 ,  G02B6/14

    摘要： An optical input section for a coherent optical receiver based on polarisation diversity include means for a different order mode conversion (25.2 in 41) followed means for different order mode splitting (25.3 in 41) before or after means for mixing (42, 43) of optical signals. Since devices for different order mode splitting and for mixing have simple integrable realizations without metallized elements, t.w. (a)symmetric Y-junctions and 3dB-power couplers, respectively, the optical input section is realizable without such metallized elements.

    Optical device with substrate and waveguide structure having thermal matching interfaces
    108.
    发明公开
    Optical device with substrate and waveguide structure having thermal matching interfaces 失效
    的光学器件衬底和波导结构，其具有匹配的热接口

    公开(公告)号：EP0697605A3

    公开(公告)日：1998-02-04

    申请号：EP95305550.6

    申请日：1995-08-09

    申请人： AT&T Corp.

    发明人： Bruce, Allan James ,  Presby, Herman Melvin

    IPC分类号： G02B6/12

    CPC分类号： G02B6/105 ,  G02B6/126 ,  G02B2006/12038

    摘要： The present invention provides polarization-independent optical devices by reducing or eliminating strain-induced birefringence associated with prior device structures. In a first embodiment, an optical device is produced comprising a doped silica substrate (20) having a coefficient of thermal expansion between 8 x 10⁻⁷°C⁻¹ and 15 x 10⁻⁷°C⁻¹. On the doped silica substrate is formed a doped silica waveguiding structure (30) having a coefficient of thermal expansion between 8 x 10⁻⁷°C⁻¹ and 15 x 10⁻⁷°C⁻¹. A cladding layer (40) is formed on the doped silica waveguiding structure. Alternatively, the coefficient of thermal expansion of the doped silica substrate is selected to be approximately 90% to 110% of the coefficient of thermal expansion of the doped silica waveguiding structure. In another aspect, the present invention provides an optical device comprising a doped silica substrate having a doping gradient from a lower surface to an upper surface. The doping level at the upper surface has a coefficient of thermal expansion approximating the coefficient of thermal expansion of a doped silica waveguiding structure formed thereon.