摘要:
A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising: a. from 45 to 90 wt % of a water soluble organic solvent b. from 3 to 10 wt % of a sulfonic acid or its corresponding salt c. from 5 to 50 wt % water
摘要:
Embodiments of the present disclosure include cleaning processes, closed loop cleaning machines, and methods of cleaning an article. The cleaning process includes contacting a surface of an article with a cleaning composition in a cleaning chamber, where the cleaning composition includes at least about 85 percent by weight organic solvents, based on total weight of the cleaning composition, and where at least about 5 percent by weight of the organic solvents is propylene glycol, based on total weight of the organic solvents, to clean the surface of the article, collecting the cleaning composition including contaminants, and recovering the cleaning composition via distillation, where a distillation apparatus removes the contaminants from the cleaning composition and is connected to the cleaning chamber by a process stream.
摘要:
Nanoelectronic and microelectronic cleaning compositions for cleaning nanoelectronic and microelectronic substrates under supercritical fluid state conditions, and particularly cleaning compositions useful with and having improved compatibility with nanoelectronic and microelectronic substrates characterized by silicon dioxide, sensitive low-κ or high-κ dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of Al or Al(Cu) metallizations and advanced interconnect technologies, are provided by nanoelectronic and microelectronic cleaning compositions comprising nanoelectronic and microelectronic cleaning compositions of this invention are provided by compositions comprising: (1) a supercritical main fluid reaching a supercritical fluid state at a temperature of 250°C or less and a pressure of 600 bars or less (592.2 atm, 8702.3 psi), and (2) as a secondary fluid, a modifier formulation selected from the following formulations: a) a formulation comprising: an oxidizing agent; a polar organic solvent selected from the group consisting of amides, sulfones, sulfolenes, selenones and saturated alcohols; and optionally other components; b) a silicate free formulation comprising: a polar organic solvent selected from the group consisting of amides, sulfones, selenones and saturated alcohols; a strong alkaline base; and optionally other components; c) a formulation comprising: from about 0.05% to 30% by weight of one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions; from about 0.5 to about 99.95% by weight of one or more corrosion inhibiting solvent compounds, said corrosion inhibiting solvent compound having at least two sites capable of complexing with metals; and optionally other components; d) a formulation comprising: from about 0.05 to 20% by weight of one or more non-ammonium producing, non-HF producing fluoride salt; from about 5 to about 99.95% by weight of water, organic solvent or both water and organic solvent; and optionally other components; and e) a formulation comprising: from about 0.05% to 30% by weight of one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions; from about 5 to about 99.95% by weight of one or more steric hindered amide solvents; and optionally other components.
摘要:
A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.
摘要:
Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous and low-k to high-k dielectrics and copper metallization. The cleaning composition contain one or more non-ammonium producing, non-HF producing fluoride salt (non ammonium, quaternary ammonium fluoride salt) in a suitable solvent matrix.
摘要:
To provide a new uninflammable solvent composition which is capable of removing soils such as oils attached to electronic components such as ICs, precision machine components or glass substrates, or flux and dusts attached on e.g. printed boards. A mixed solvent composition comprising from 40 to 90 mass% of 1,1,1,2,2,3,3,4,4,5,5,6,6-tridecafluorooctane and from 10 to 60 mass% of isopropanol, and an azeotropic solvent composition comprising 62 mass% of 1,1,1,2,2,3,3,4,4,5,5,6,6-tridecafluorooctane and 38 mass% of isopropanol.