CURRENT BIASED DUAL DBR GRATING SEMICONDUCTOR LASER
    120.
    发明公开
    CURRENT BIASED DUAL DBR GRATING SEMICONDUCTOR LASER 审中-公开
    偏倚双DBR莱迪思半导体激光器

    公开(公告)号:EP1323218A4

    公开(公告)日:2007-04-25

    申请号:EP01968793

    申请日:2001-09-13

    申请人: UNIV ILLINOIS

    摘要: A laser heterostructure (10) having an active layer, a lateral waveguide terminating in an output aperture (11), and a gain section (17) with a current drive electrode. A rear surface distributed Bragg grating (12) with a tuning current electrode (19) is formed on a surface of said laser heterostructure. The laser also includes a front surface distributed Bragg grating (14) with a tuning current electrode (16) on a surface of the laser heterostructure. The front surface distributed Bragg grating is closer to the output aperture than the rear surface distributed Bragg grating. There is a space (15) between the rear surface distributed Bragg grating and the front surface distributed Bragg grating. A current drive electrode (18) is formed on the space. Operation is best when the front surface distributed Bragg grating has adequate reflectivity at the Bragg wavelength with minimal scattering loss at other wavelengths, particularly at the wavelength of the rear surface Bragg grating.