摘要:
A piezoelectric element is provided which includes a piezoelectric layer (70) formed of perovskite potassium sodium niobate by chemical solution deposition on a first electrode (60), and a second electrode (80) provided thereon. Voids (75) are included in the piezoelectric layer such that a difference between the maximum value and the minimum value of void dimensions (w) in film thickness direction (Z) is equal to or smaller than 14 nm, and the maximum value is equal to or smaller than 24 nm in cross-sectional SEM image.
摘要:
The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm−3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.
摘要:
There is provided a lead- and potassium-free piezoelectric material having a high piezoelectric constant and a satisfactory insulation property and a piezoelectric element that includes the piezoelectric material. The piezoelectric material contains a perovskite-type metal oxide having the general formula (1): (NaxBa1-y)(NbyTi1-y)O3 (wherein x satisfies 0.80≤x≤0.95, and y satisfies 0.85≤y≤0.95); and at least one rare-earth element selected from La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, wherein the rare-earth element content is more than 0 mol % and 5 mol % or less of the amount of perovskite-type metal oxide. The piezoelectric element includes the piezoelectric material.
摘要翻译:提供具有高压电常数和令人满意的绝缘性能的无铅和无钾压电材料以及包含该压电材料的压电元件。 所述压电材料包含具有通式(1):(Na x Ba 1-y)(N y Ti 1-y)O 3(其中x满足0.80≦̸ x≦̸ 0.95,且y满足0.85≦̸ y&nE; 0.95)的钙钛矿型金属氧化物。 ; 和选自La,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu中的至少一种稀土元素,其中稀土元素含量大于0 以及钙钛矿型金属氧化物量的5摩尔%以下。 压电元件包括压电材料。
摘要:
This ferroelectric thin film comprises lead zirconate titanate niobate. In said ferroelectric thin film, the ratio (a) of number of moles of lead to the total number of moles of zirconium, titanium, and niobium is greater than or equal to 100%; the ratio (b) of the number of moles of niobium to the total number of moles of zirconium, titanium, and niobium is between 10% and 20%, inclusive; and the ratio (c) of the number of moles of zirconium to the total number of moles of zirconium and titanium is between 52% and 59%, inclusive. The film stress exhibited by the ferroelectric thin film is between 100 and 250 MPa, inclusive.
摘要:
An apparatus for installation within a tire for a vehicle includes a flexible arm and a power generating element coupled to the flexible arm for generating electrical energy. One end of the flexible arm is coupled to a rim of the tire. The opposing end of the flexible arm is configured to be in contact with the inside tread surface of the tire. The flexible arm is capable of deformation in response to a variability of distance between the rim and the inside tread surface during rolling movement of the tire, and the power generating element generates the electrical energy in response to deformation of the flexible arm. The apparatus may be combined with a tire pressure sensor module as a system so as to provide electrical energy for powering the tire pressure sensor module.
摘要:
A piezoelectric thin film (1) is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at% or less. When producing the piezoelectric thin film (1), scandium and aluminum are sputtered simultaneously on a substrate (21) from a scandium aluminum alloy target material (10) having a carbon atomic content of 5 at% or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam (31) on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.
摘要:
A piezoelectric element is provided which includes a piezoelectric layer (70) formed of perovskite potassium sodium niobate by chemical solution deposition on a first electrode (60), and a second electrode (80) provided thereon. Voids (75) are included in the piezoelectric layer such that a difference between the maximum value and the minimum value of void dimensions (w) in film thickness direction (Z) is equal to or smaller than 14 nm, and the maximum value is equal to or smaller than 24 nm in cross-sectional SEM image.
摘要:
An element (1) including: electrodes (11, 21); and intermediate layers (2, 3), each being sandwiched between any pair of the electrodes, wherein the intermediate layers include at least two selected from the group consisting of: intermediate layer (2) that can be elongated and deformed in direction not parallel to direction in which external force is applied, when the external force is applied to the intermediate layer (2); intermediate layer (3) that can be compressed and deformed in direction parallel to direction in which external force is applied, when the external force is applied to the intermediate layer (3); and intermediate layer that can be elongated and deformed in direction not parallel to direction in which external force is applied, and can be compressed and deformed in direction parallel to the direction in which the external force is applied, when the external force is applied to the intermediate layer (2, 3).