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    SOLAR CELL PANEL, CELL PIECE AND PRODUCTION PROCESS FOR CELL PIECE
    111.
    发明公开
    SOLAR CELL PANEL, CELL PIECE AND PRODUCTION PROCESS FOR CELL PIECE 审中-公开

    公开(公告)号：EP4318611A1

    公开(公告)日：2024-02-07

    申请号：EP22913564.5

    申请日：2022-09-23

    申请人： Tongwei Solar (Meishan) Co., Ltd.

    发明人： XU, Wenzhou ,  MENG, Xiajie ,  YAO, Qian ,  WANG, Xiupeng ,  XING, Guoqiang

    IPC分类号： H01L31/18 ,  H01L31/0216 ,  C23C16/24

    摘要： The present application relates to a solar cell panel, a cell piece and a production process for a cell piece. A silicon oxide layer (200) is formed on the back surface of an N-type silicon wafer (100); an N-type silicon layer (300) is formed on the silicon oxide layer (200), wherein the phosphine concentration of the N-type silicon layer (300) is within a first preset concentration range; and an antireflection layer (400) is formed on the N-type silicon layer (300) and a back electrode (500) is formed on the antireflection layer (400). In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.

    METHOD OF FORMING A DOPED POLYSILICON LAYER
    113.
    发明公开
    METHOD OF FORMING A DOPED POLYSILICON LAYER 审中-公开

    公开(公告)号：EP4174209A1

    公开(公告)日：2023-05-03

    申请号：EP22203309.4

    申请日：2022-10-24

    申请人： ASM IP Holding B.V.

    发明人： VAN AERDE, Steven R. A. ,  SU, Juan

    IPC分类号： C23C16/24 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

    摘要： A method and a wafer processing furnace for forming a doped polysilicon layer on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing a plurality of substrates to a process chamber. It also comprises executing a deposition cycle comprising providing a silicon-containing precursor to the process chamber thereby depositing, on the plurality of substrates, an undoped silicon layer until a pre-determined thickness is reached and providing the process chamber with a flow of a dopant precursor gas without providing the silicon-containing precursor to the process chamber. The method also comprises performing a heat treatment process, thereby forming the doped polysilicon layer.

    PROCESSES FOR DEPOSITING SILICON-CONTAINING FILMS USING SAME
    115.
    发明公开
    PROCESSES FOR DEPOSITING SILICON-CONTAINING FILMS USING SAME 审中-公开

    公开(公告)号：EP4092154A1

    公开(公告)日：2022-11-23

    申请号：EP22176702.3

    申请日：2016-06-14

    申请人： Versum Materials US, LLC

    发明人： LEI, Xinjian ,  LI, Jianheng ,  LEHMANN, John Francis ,  COOPER, Alan Charles

    IPC分类号： C23C16/455 ,  C23C14/10 ,  C23C14/06 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/36 ,  C07F7/02 ,  H01L21/02 ,  H01L21/3205

    摘要： Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500°C or less.

    A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL
    116.
    发明公开
    A METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL 审中-公开

    公开(公告)号：EP3985147A1

    公开(公告)日：2022-04-20

    申请号：EP21206535.3

    申请日：2016-07-01

    申请人： Paragraf Limited

    发明人： THOMAS, Simon Charles Stewart

    IPC分类号： C30B25/10 ,  C30B25/16 ,  C30B29/02 ,  C30B29/60 ,  C01B32/186 ,  C23C16/26 ,  C23C16/24 ,  C30B29/06 ,  C23C16/455

    摘要： A method of producing a two-dimensional crystalline material, the method comprising: providing a substrate having nucleation sites within a reaction chamber; introducing at a precursor entry point a precursor into the reaction chamber, the precursor being in a gas phase and/or suspended in a gas; heating the substrate to a temperature that is within a decomposition range of the precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; and cooling the precursor entry point; wherein the reaction chamber is a close coupled reaction chamber such that a separation between the substrate surface upon which the two-dimensional crystalline material is formed and the point at which the precursor enters the reaction chamber is sufficiently small, and a thermal gradient between the substrate surface and the point at which the precursor enters the chamber is sufficiently steep, such that the fraction of precursor that reacts in the gas phase within the reaction chamber is low enough to allow the formation of the two-dimensional crystalline material, wherein the distance between the surface of the substrate upon which the two-dimensional crystalline material is produced and the point at which precursor enters the chamber is less than 100mm; and wherein the two-dimensional crystalline material is graphene and the species is carbon or wherein the two-dimensional crystalline material is silicene and the species is silicon; and wherein the substrate provides a non-metallic surface upon which the two-dimensional crystalline material is produced.