公开(公告)号：EP2612352B1

公开(公告)日：2014-07-30

申请号：EP11748936.9

申请日：2011-08-24

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： MORICEAU, Hubert ,  ARGOUD, Maxime ,  MORALES, Christophe ,  ZUSSY, Marc

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/68 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76224

公开(公告)号：EP2612352A1

公开(公告)日：2013-07-10

申请号：EP11748936.9

申请日：2011-08-24

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： MORICEAU, Hubert ,  ARGOUD, Maxime ,  MORALES, Christophe ,  ZUSSY, Marc

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/68 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76224

摘要： To obtain a film made of a first material on a polymer substrate: a first sheet is bonded to a second sheet (2), at least one of these sheets having at least one layer of the first material located close to the interface; at least one cavity (4) is cut out in the first sheet, the bottom (5) of said cavity, parallel to the interface between the first and second sheets, defines a bottom zone in the first sheet; a polymer layer (8) is formed in this cavity over a controlled thickness starting from its bottom; the second sheet is removed, over at least most of its thickness, so as to release, beneath the polymer layer, a film comprising said layer of the first material.

公开(公告)号：EP1497857B1

公开(公告)日：2010-05-19

申请号：EP03727614.4

申请日：2003-03-26

申请人： Commissariat à l'énergie atomique et aux énergies alternatives

发明人： ASPAR, Bernard ,  ZUSSY, Marc ,  CLERC, Jean-Frédéric

IPC分类号： H01L21/58 ,  H01L21/68 ,  H01L21/762 ,  H01L21/20

CPC分类号： H01L21/2007 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2203/036 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/68359 ,  Y10S438/977

摘要： The invention relates to a method for obtaining a thin layer from a plate provided with a front side with a given relief and a rear side, said method comprising the following steps: a) a support handle comprising a side used as a bonding side is obtained; b) the front side of the plate is prepared such that it is partially planarised in order to obtain a bonding energy E0 lying between a first value corresponding to the minimum bonding energy compatible with the subsequent thinning stage and a second value corresponding to the maximum bonding energy compatible with the subsequent debonding operation, the bonding energy E0 being such that E0 = αE, E being the bonding energy which would be obtained if the front side of the plate was completely planarised, and α being the ratio of the partially planarised surface of the front side of the plate to the surface of the front side of the plate if it was completely planarised; c) the front side of the plate is bonded to the bonding surface of the support handle by means of molecular bonding; d) the plate is thinned, starting from its rear side, until the thin layer is obtained; and e) the thin layer is debonded from the support handle and transferred to a support.

公开(公告)号：EP1378003B1

公开(公告)日：2017-11-08

申请号：EP02732806.1

申请日：2002-04-11

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： ASPAR, Bernard ,  MORICEAU, Hubert ,  ZUSSY, Marc ,  RAYSSAC, Olivier

IPC分类号： H01L21/18 ,  H01L21/762 ,  H01L21/306 ,  H01L21/304 ,  H01L21/324 ,  H01L21/265 ,  H01L21/78 ,  H01L21/68

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

公开(公告)号：EP2572374A1

公开(公告)日：2013-03-27

申请号：EP11720488.3

申请日：2011-05-19

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： FOURNEL, Frank ,  BALLY, Laurent ,  ZUSSY, Marc ,  JOURDE, Dominique

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01L23/58

CPC分类号： C23F1/02 ,  H01L21/67 ,  H01L21/68714

摘要： A method for making a support of at least one substrate, including: making a stack including at least two substrates, each of the two substrates including two opposite main faces, both substrates being secured to each other such that one of the main faces of a first of the two substrates is positioned facing one of the main faces of the second of the two substrates and against an etch-stop material; etching, through the first of the two substrates and with stop on the etch-stop material, at least one location that can receive a substrate that can be supported by the support.