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24 条记录 (耗时 0.016 秒)

    Magnetic recording medium
    12.
    发明公开
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：EP0179382A2

    公开(公告)日：1986-04-30

    申请号：EP85113015.3

    申请日：1985-10-14

    申请人： HITACHI, LTD. ,  Hitachi Maxell Ltd.

    发明人： Futamoto, Masaaki ,  Honda, Yukio ,  Asada, Seiichi ,  Nishimura, Takashi Hitachi Daini Kyoshinryo ,  Yoshida, Kazuetsu ,  Ishihara, Heigo

    IPC分类号： G11B5/64 ,  G11B5/72 ,  G11B5/85

    CPC分类号： G11B5/72 ,  G11B5/851 ,  Y10S428/90

    摘要： A magnetic recording medium comprising a substrate, a ferromagnetic thin film formed on the substrate, and a protective film formed directly on the ferromagnetic thin film, and a process for producing such magnetic recording medium. The expression "formed directly" refers to the technique for forming the protective film on the ferromagnetic thin film so that the interface therebetween is free from contamination by, for instance, conducting the protective film formation under the vacuum used when forming the ferromagnetic thin film.

    摘要翻译： 本发明提供一种磁记录介质及其制造方法，该磁记录介质包括基板，在该基板上形成的强磁性薄膜以及在该强磁性薄膜上直接形成的保护膜。 表述“直接形成”是指用于在铁磁薄膜上形成保护膜的技术，使得它们之间的界面不受污染，例如在形成铁磁薄膜时使用的真空下进行保护膜形成。

    Surface microscope apparatus
    15.
    发明公开
    Surface microscope apparatus 失效
    OberflächenmikroskopeundOberflächenmikroskopie。

    公开(公告)号：EP0441311A2

    公开(公告)日：1991-08-14

    申请号：EP91101503.0

    申请日：1991-02-05

    申请人： HITACHI, LTD.

    发明人： Hasegawa, Tsuyoshi, Hitachi Daiyon Kyoshinryo B208 ,  Hosaka, Sumio ,  Hosoki, Shigeyuki ,  Honda, Yukio ,  Ichikawa, Masakazu

    IPC分类号： H01J37/252 ,  G01N27/00

    CPC分类号： G01Q10/06 ,  G01Q20/00 ,  G01Q30/16 ,  G01Q70/02 ,  Y10S977/852 ,  Y10S977/86 ,  Y10S977/861 ,  Y10S977/863 ,  Y10S977/873

    摘要： An atomic force microscope is provided for sensing displacement of a cantilever (1) based on a scanning tunneling microscopy. Concretely, the present invention comprises a first microscope having a cantilever (1) for sensing atomic force or magnetic force and an STM (Scanning Tunneling Microscope) functioned as a second microscope for sensing tunneling current and keeping the tunneling current constant. It results in the microscope being able to carry out atomic force microscopy and tunneling microscopy without changing a single STM tip (1b) and to control the minimal force between the sample (3) and the tip (1b) to be constant.

    摘要翻译： 提供了一种用于感测基于扫描隧道显微镜的悬臂（1）位移的原子力显微镜。 具体地，本发明包括具有用于感测原子力或磁力的悬臂（1）的第一显微镜和用作感测隧道电流并保持隧道电流恒定的第二显微镜的STM（扫描隧道显微镜）。 这导致显微镜能够进行原子力显微镜和隧道显微镜，而不改变单个STM尖端（1b）并且控制样品（3）和尖端（1b）之间的最小力保持恒定。

    Method of forming weak-link Josephson junction, and superconducting device employing the junction
    16.
    发明公开
    Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效
    形成使用这种转变的弱耦合的约瑟夫逊结和超导器件的方法。

    公开(公告)号：EP0364101A2

    公开(公告)日：1990-04-18

    申请号：EP89309231.2

    申请日：1989-09-12

    申请人： HITACHI, LTD.

    发明人： Takagi, Kazumasa ,  Madokoro, Yuuichi ,  Fukazawa, Tokuumi ,  Miyauchi, Katsuki ,  Kawanami, Yoshimi ,  Aida, Toshiyuki ,  Honda, Yukio ,  Futamoto, Masaaki ,  Hiratani, Masahiko

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/729 ,  Y10T29/41

    摘要： To form a weak-link Josephson junction of the type employing a thin film of an oxide superconductor, a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary (45) is formed by a method in which atoms of different species are deposited on a predetermined part (42) of the surface of a substrate (40) the predetermined part of the surface of a substrate (40) is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate (40). Then a superconducting thin film (44) is epitaxially grown on the substrate (43). Alternatively the predetermined part of the superconducting thin film (44) epitaxially grown on a substrate (43) is diffused with atoms of different species hampering a superconducting or the predetermined part of the superconductivity thin film (44) is disturbed, the superconducting thin film (44) is then annealed,
    Also. a superconducting device employing the weak-link junction is disclosed.

    摘要翻译： 为了形成型采用氧化物超导体薄膜的弱连接的约瑟夫逊结，晶粒边界产生的反射人工晶体缺陷被用作弱连接结。 晶界（45）是由在不同种类的哪个原子的方法形成沉积在基片的表面（40）一个基片的表面（40）的预定部分的预定部分（42）是不安 不同晶面取向的，或部分在基片（40）的表面上形成。 然后超导薄膜（44）被外延生长在衬底上（43）。 可替换地，超导薄膜（44）外延生长在一个基板（43）的预定部分与不同物种妨碍超导或超导薄膜的预定部分的原子扩散的（44）被打乱，超导薄膜（ 44）然后退火，从而。 超导器件用人弱连接结游离缺失盘。