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公开(公告)号：EP0276683B1
公开(公告)日：1994-03-30
申请号：EP88100331.3
申请日：1988-01-12
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Ishioka, Sachio , Takasaki, Yukio , Hirai, Tadaaki , Tsuji, Kazutaka , Makishima, Tatsuo , Nonaka, Yasuhiko , Kawamura, Tatsuro , Yamashita, Takashi , Taketoshi, Kazuhisa , Shidara, Keiichi , Ando, Fumihiko , Tanioka, Kenkichi
CPC分类号： H01L31/095 , H01L31/0272
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公开(公告)号：EP0326178A2
公开(公告)日：1989-08-02
申请号：EP89101545.5
申请日：1989-01-30
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Ogawa, Hirofumi , Sameshima, Kenji , Hirai, Tadaaki , Unnai, Takaaki , Yamamoto, Masanao , Shidara, Keiichi , Yamazaki, Junichi Gurin Puraza Hazumi 205 , Hiruma, Eikiyu , Suzuki, Shirou
IPC分类号： H01L31/20 , H01L31/107 , H01L31/0272
CPC分类号： H01L31/20 , H01J9/233 , H01L31/0272 , H01L31/095 , H01L31/1884 , Y02E10/50
摘要： A method of making an image pickup tube target (Fig. 1A), etc., using an amorphous photoconductive layer (4). When an electrode (2 or 7), an amorphous semiconductor layer (4), etc., are provided on a substrate (1 or 6), the steps of ion etching away a surface of the substrate (1 or 6) and forming the electrode (2 or 7) are performed so that a target (Fig. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.
摘要翻译： 使用非晶光导电层（4）制造图像拾取管目标（图1A）等的方法。 当在基板（1或6）上设置电极（2或7），非晶半导体层（4）等时，离子蚀刻离开基板（1或6）的表面并形成 执行电极（2或7），使得即使在整个目标物上施加高电场，也产生不会在再现图像中实质上引起缺陷的目标（图1A）。
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公开(公告)号：EP0255246A2
公开(公告)日：1988-02-03
申请号：EP87305906.7
申请日：1987-07-03
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Tanioka, Kenkichi , Shidara, Keiichi , Kawamura, Tatsuro , Yamazaki, Junichi , Hiruma, Eikyuu , Taketoshi, Kazuhisa , Suzuki, Shiro , Yamashita, Takashi , Kosugi, Mitsuo , Ikeda, Yochizumi , Aiba, Masaaki Honkomagome Nichome Danchi 108 , Hirai, Tadaaki , Takasaki, Yukio , Ishioka, Sachio , Makishima, Tatsuo , Sameshima, Kenji Hitachi Owadaryo 48-18 , Uda, Tsuyoshi , Goto, Naohiro , Nonaka, Yasuhiko
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer (24) capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非晶半导体层（24）。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。
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公开(公告)号：EP0067015A2
公开(公告)日：1982-12-15
申请号：EP82302745.3
申请日：1982-05-27
申请人： Hitachi, Ltd. , NIPPON HOSO KYOKAI
发明人： Shidara, Keiichi , Tanioka, Kenkichi , Uchida, Teruo , Kusano, Chushirou , Takasaki, Yukio , Nonaka, Yasuhiko , Inoue, Eisuke
IPC分类号： H01J29/36
CPC分类号： H01L31/08 , H01J29/456
摘要： A photoconductive film comprises a photoconductive layer (3) which is mainly made of selenium and has a region (b) in the thickness direction containing tellurium. At least one of (i) a portion in a direction of hole flow of said region (b) and (ii) a portion in the hole flow direction of another region (c) which is located adjacent to said region (b) is doped with at least one member selected from oxides, fluorides and elements which belong to groups II, III and VII, which are capable of forming negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such dopants include CuO, In 2 O 3 , Se0 2 , V 2 0 5 , MoO 3 , WOa, GaF 2 , InF 3 , Zn, Ga, In, Cl, I and Br. The "after image" characteristic ascribable to incident light of high intensity can be significantly improved.
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公开(公告)号：EP0255246B1
公开(公告)日：1994-11-30
申请号：EP87305906.7
申请日：1987-07-03
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Tanioka, Kenkichi , Shidara, Keiichi , Kawamura, Tatsuro , Yamazaki, Junichi , Hiruma, Eikyuu , Taketoshi, Kazuhisa , Suzuki, Shiro , Yamashita, Takashi , Kosugi, Mitsuo , Ikeda, Yochizumi , Aiba, Masaaki Honkomagome Nichome Danchi 108 , Hirai, Tadaaki , Takasaki, Yukio , Ishioka, Sachio , Makishima, Tatsuo , Sameshima, Kenji Hitachi Owadaryo 48-18 , Uda, Tsuyoshi , Goto, Naohiro , Nonaka, Yasuhiko
CPC分类号： H01J29/456
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公开(公告)号：EP0458179A3
公开(公告)日：1994-01-12
申请号：EP91107859.0
申请日：1991-05-15
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Sameshima, Kenji, of Hitachi Owadaryo , Makishima, Tatsuo , Hirai, Tadaaki , Takasaki, Yukio , Kubota, Misao , Tanioka, Kenkichi , Shidara, Keiichi
IPC分类号： H01J31/38
摘要： An image pickup tube is provided with the third electrode (6, 19) to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a substrate (1), a target electrode (2) and a photo-conductive film (3). A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube. The photo-conductive film (3) is covered by a porous thin film (4).
摘要翻译： 一种图像拾取管设置有第三电极（6，19），以控制其不受电子束在图像拾取管靶部，其包括衬底（1），靶电极扫描的区域的电势（2） 和光电导膜（3）。 还公开了一种用于操作该图像拾取管的方法。 因此，其中当所述图像拾取管具有比较高的目标电压，例如，图像失真，阴影，瀑布现象和图像反转现象使用的产生的不需要图像的现象可被抑制，从而实现高灵敏度的摄像管。 光导膜（3）被多孔薄膜（4）覆盖。
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公开(公告)号：EP0326178A3
公开(公告)日：1990-06-27
申请号：EP89101545.5
申请日：1989-01-30
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Ogawa, Hirofumi , Sameshima, Kenji , Hirai, Tadaaki , Unnai, Takaaki , Yamamoto, Masanao , Shidara, Keiichi , Yamazaki, Junichi Gurin Puraza Hazumi 205 , Hiruma, Eikiyu , Suzuki, Shirou
IPC分类号： H01L31/20 , H01L31/107 , H01L31/0272
CPC分类号： H01L31/20 , H01J9/233 , H01L31/0272 , H01L31/095 , H01L31/1884 , Y02E10/50
摘要： A method of making an image pickup tube target (Fig. 1A), etc., using an amorphous photoconductive layer (4). When an electrode (2 or 7), an amorphous semiconductor layer (4), etc., are provided on a substrate (1 or 6), the steps of ion etching away a surface of the substrate (1 or 6) and forming the electrode (2 or 7) are performed so that a target (Fig. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.
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公开(公告)号：EP0283699A3
公开(公告)日：1989-10-04
申请号：EP88101954.1
申请日：1988-02-10
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Takasaki, Yukio , Tsuji, Kazutaka , Makishima, Tatsuo , Hirai, Tadaaki , Ishioka, Sachio , Kawamura, Tatsuro , Shidara, Keiichi , Hiruma, Eikyu , Tanioka, Kenkichi , Yamazaki, Junichi , Sameshima, Kenji , Matsubara, Hirokazu Sanhaitsu Musashino A-107 , Taketoshi, Kazuhisa
CPC分类号： H01L31/095 , H01L31/03765 , H01L31/107 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.
摘要翻译： 公开了使用主要由包含氢和卤素的至少一种元素的四面体元素组成的非晶材料作为半导体材料的光电转换装置。 当强电场施加到通过使用该非晶半导体形成的层上时，主要在非晶半导体的内部产生电荷倍增效应，因此可以获得具有高灵敏度的热稳定光电转换器件，同时保持 一个很好的光响应。
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公开(公告)号：EP0238849A3
公开(公告)日：1989-09-20
申请号：EP87102348.7
申请日：1987-02-19
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Takasaki, Yukio , Makishima, Tatsuo , Tsuji, Kazutaka , Hirai, Tadaaki , Inoue, Eisuke , Nonaka, Yasuhiko , Goto, Naohiro , Yamamoto, Masanao , Shidara, Keiichi , Tanioka, Kenkichi , Yamashita, Takashi , Kawamura, Tatsuro , Hiruma, Eikyuu , Suzuki, Shirou , Aiba, Masaaki
IPC分类号： H01J29/45
CPC分类号： H01J29/456
摘要： A target of image pickup tube, which comprises a transparent substrate (1), a transparent conductive film (2), a p-type photoconductive film (3) made mainly from amorphous Se, an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a backward bias, characterized in that the p-type photoconductive film (3) contains at least a region (b) containing over 35% to 60% by weight of Te in the film thickness direction and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature (Fig. 2).
摘要翻译： 一种图像拾取管的目标，其包括透明基板（1），透明导电膜（2），主要由非晶Se构成的p型光电导膜（3），能够形成整流的n型导电膜 其特征在于p型光电导薄膜（3）至少含有一个含有35％-60％（重量）的区域（b） Te的膜厚方向的至少包含0.005〜5重量％的至少能够在膜厚方向上在非晶Se中形成浅层的材料的区域，即使在膜厚方向上操作时也具有良好的余像特性 高温（图2）。
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公开(公告)号：EP0251647A2
公开(公告)日：1988-01-07
申请号：EP87305562.8
申请日：1987-06-23
申请人： HITACHI, LTD. , NIPPON HOSO KYOKAI
发明人： Shimomoto, Yasuharu , Ishioka, Sachio , Takasaki, Yukio , Hirai, Tadaaki , Tsuji, Kazutaka , Makishima, Tatsuo , Matsubara, Hirokazu , Sameshima, Kenji , Yamazaki, Junichi , Tanioka, Kenkichi , Kosugi, Mitsuo , Shidara, Keiichi , Kawamura, Tatsuro , Hiruma, Eikyuu , Yamashita, Takashi
CPC分类号： H01J29/456
摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film (2), an amorphous layer (4) consisting essentially of silicon containing hydrogen, and an amorphous layer (5) consisting essentially of selenium in the above order on a light-transmitting substrate (l). The selenium layer (5) prevents deterioration of the performance of the silicon layer (4) with time, while not affecting the useful properties of the silicon layer (4).
摘要翻译： 图像拾取管的目标是通过至少层叠透明导电膜（2），基本上由含氢的硅组成的非晶层（4）和基本上由硒组成的非晶层（5）以上述顺序 透光衬底（1）。 硒层（5）能够防止硅层（4）的性能随着时间的推移而恶化，同时不会影响硅层（4）的有用性能。
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