公开(公告)号：EP0223987A3

公开(公告)日：1989-11-08

申请号：EP86113868.3

申请日：1986-10-07

申请人： International Business Machines Corporation

发明人： Clodgo, Donna Jean ,  Previti-Kelly, Rosemary Ann ,  Walton, Erick Gregory

IPC分类号： H01L21/312

CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3121 ,  Y10S65/901 ,  Y10S438/97

摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an 0₂ RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.

公开(公告)号：EP0200082A3

公开(公告)日：1988-11-17

申请号：EP86105142

申请日：1986-04-15

申请人： International Business Machines Corporation

发明人： Clodgo, Donna Jean ,  Previti-Kelly, Rosemary Ann ,  Walton, Erick Gregory

IPC分类号： H01L21/90

CPC分类号： H01L21/7688 ,  H01L21/0271 ,  H01L21/0272 ,  H01L21/31133 ,  H05K3/143 ,  Y10S438/951

摘要： A lift-off metal deposition process in which a high-temperature polyimide layer (16) (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer (14). The two layers (14, 16) are anisotropically etched through a photoresist mask to form via holes in the first polyimide layer (14). After application of a metal layer (20), the high-temperature polyimide layer (16) is lifted off the first polyimide layer (14), which remains as a passivation layer.

公开(公告)号：EP0618617B1

公开(公告)日：2004-05-12

申请号：EP94103266.6

申请日：1994-03-04

申请人： International Business Machines Corporation

发明人： O'Connor, Loretta Jean ,  Previti-Kelly, Rosemary Ann ,  Reen, Thomas Joseph

IPC分类号： H01L21/768

CPC分类号： H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H05K1/0346 ,  H05K3/4076 ,  H05K3/4644 ,  H05K3/4676

公开(公告)号：EP0618617A3

公开(公告)日：1997-04-16

申请号：EP94103266.6

申请日：1994-03-04

申请人： International Business Machines Corporation

发明人： O'Connor, Loretta Jean ,  Previti-Kelly, Rosemary Ann ,  Reen, Thomas Joseph

IPC分类号： H01L21/90

CPC分类号： H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H05K1/0346 ,  H05K3/4076 ,  H05K3/4644 ,  H05K3/4676

摘要： The process includes depositing a polyimide precursor (1), then a silane (2) and finally a metal (4), after patterning the polyimide (1) and silane (2). The sandwich is heated to completely imidize the polyimide (1), crosslink the silane (2) and anneal the metal (4) simultaneously. The excess metal (4) overlying the polyimide (1) between the vias (3) is removed by chemical mechanical polishing using the crosslinked silane (2) as a polish stop.

摘要翻译： 公开了一种在聚酰亚胺电介质中制造多个金属化通孔的方法。 该方法包括在图案化聚酰亚胺和硅烷之后沉积聚酰亚胺前体，然后沉积硅烷，最后沉积金属。 将夹心物加热以完全酰亚胺化，同时交联硅烷并退火金属。 通过使用交联硅烷作为抛光止挡的化学机械抛光除去覆盖通孔之间的聚酰亚胺的多余金属。

公开(公告)号：EP0618617A2

公开(公告)日：1994-10-05

申请号：EP94103266.6

申请日：1994-03-04

申请人： International Business Machines Corporation

发明人： O'Connor, Loretta Jean ,  Previti-Kelly, Rosemary Ann ,  Reen, Thomas Joseph

IPC分类号： H01L21/90

CPC分类号： H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H05K1/0346 ,  H05K3/4076 ,  H05K3/4644 ,  H05K3/4676

摘要： The process includes depositing a polyimide precursor (1), then a silane (2) and finally a metal (4), after patterning the polyimide (1) and silane (2). The sandwich is heated to completely imidize the polyimide (1), crosslink the silane (2) and anneal the metal (4) simultaneously. The excess metal (4) overlying the polyimide (1) between the vias (3) is removed by chemical mechanical polishing using the crosslinked silane (2) as a polish stop.

摘要翻译： 公开了一种在聚酰亚胺电介质中制造多个金属化通孔的方法。 该方法包括在图案化聚酰亚胺和硅烷之后沉积聚酰亚胺前体，然后沉积硅烷，最后沉积金属。 将夹心物加热以完全酰亚胺化，同时交联硅烷并退火金属。 通过使用交联硅烷作为抛光止挡的化学机械抛光除去覆盖通孔之间的聚酰亚胺的多余金属。

公开(公告)号：EP0455032A3

公开(公告)日：1992-04-15

申请号：EP91105941.8

申请日：1991-04-13

申请人： International Business Machines Corporation

发明人： Cronin, John Edward ,  Kaanta, Carter Welling ,  Previti-Kelly, Rosemary Ann ,  Ryan, James Gardner ,  Lee, Pei-Ing Paul ,  Yoon, Jung Hoon

IPC分类号： H01L21/768 ,  H01L21/312 ,  H01L23/485

CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05K3/0023 ,  H05K3/045 ,  H05K3/107 ,  H05K3/465 ,  H05K3/467 ,  H05K2201/0154 ,  H01L2924/00

摘要： Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate (2) having a conductor pattern (4). The insulator layers (1, 6), each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.

摘要翻译： 公开了一种在具有导体图案（4）的经处理的半导体衬底（2）上制造多级导体/绝缘体膜的方法。 绝缘体层（1,6）各自包含光敏聚酰亚胺聚合物组合物，并且这允许在绝缘体层中直接形成期望的布线通道和螺柱通孔，而不使用单独的掩模层和所得到的图像转印步骤，因此 提供了一个不那么麻烦和昂贵的过程。

公开(公告)号：EP0223987B1

公开(公告)日：1992-01-15

申请号：EP86113868.3

申请日：1986-10-07

申请人： International Business Machines Corporation

发明人： Clodgo, Donna Jean ,  Previti-Kelly, Rosemary Ann ,  Walton, Erick Gregory

IPC分类号： H01L21/312

CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3121 ,  Y10S65/901 ,  Y10S438/97

摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an O2 RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.

公开(公告)号：EP0223987A2

公开(公告)日：1987-06-03

申请号：EP86113868.3

申请日：1986-10-07

申请人： International Business Machines Corporation

发明人： Clodgo, Donna Jean ,  Previti-Kelly, Rosemary Ann ,  Walton, Erick Gregory

IPC分类号： H01L21/312

CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3121 ,  Y10S65/901 ,  Y10S438/97

摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an 0₂ RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.

公开(公告)号：EP0200082A2

公开(公告)日：1986-12-10

申请号：EP86105142.3

申请日：1986-04-15

申请人： International Business Machines Corporation

发明人： Clodgo, Donna Jean ,  Previti-Kelly, Rosemary Ann ,  Walton, Erick Gregory

IPC分类号： H01L21/90

摘要： A lift-off metal deposition process in which a high-temperature polyimide layer (16) (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer (14). The two layers (14, 16) are anisotropically etched through a photoresist mask to form via holes in the first polyimide layer (14). After application of a metal layer (20), the high-temperature polyimide layer (16) is lifted off the first polyimide layer (14), which remains as a passivation layer.

摘要翻译： 其中将高温聚酰亚胺层（16）（即具有高酰亚胺化温度的聚酰亚胺）施加到第一聚酰亚胺层（14）的剥离金属沉积工艺。 通过光刻胶掩模对两个层（14,16）进行各向异性蚀刻，以在第一聚酰亚胺层（14）中形成通孔。 在施加金属层（20）之后，将高温聚酰亚胺层（16）从第一聚酰亚胺层（14）上抬起，该第一聚酰亚胺层保留为钝化层。