SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR

    公开(公告)号:EP2696210B1

    公开(公告)日:2018-07-25

    申请号:EP12767837.3

    申请日:2012-05-23

    CPC分类号: G01R33/098

    摘要: The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions

    MAGNETO RESISTANCE SENSOR FOR IDENTIFYING MAGNETIC IMAGE
    12.
    发明公开
    MAGNETO RESISTANCE SENSOR FOR IDENTIFYING MAGNETIC IMAGE 审中-公开
    MAGNETWIDERSTANDS传感器ZUR ERKENNUNG VON MAGNETBILDERN

    公开(公告)号:EP3125202A1

    公开(公告)日:2017-02-01

    申请号:EP15770409.9

    申请日:2015-03-24

    IPC分类号: G07D7/04

    摘要: A magnetoresistive magnetic imaging sensor for identifying a magnetic image comprises a PCB (1) and several magnetoresistive sensor chips (2), wherein the several magnetoresistive sensor chips (2) are located on the PCB (1), and the PCB (1) is perpendicular or parallel to the magnetic image detection surface (3). It has a lateral detection mode and front detection mode, In the lateral detection mode, each side face (2(1)) of the several magnetoresistive sensor chips (2) is parallel or coplanar with the side (1(1)) of the PCB(1), and parallel to the magnetic image detection surface. The several magnetoresistive sensor chips (2) have the same magnetic sensing direction. In the lateral detection mode, the adjacent magnetoresistive sensor chips (2) are stacked, while in the front detection mode, the adjacent magnetoresistive sensor chips (2) are arranged in a staggered manner, in order to achieve continuity of the detection area in the magnetic image detection surface. The magnetoresistive magnetic imaging sensor may also comprise a permanent magnet assembly and a housing. The sensor has several advantages, including continuity across the detection area, good signal reproduction, high sensitivity, and low power consumption.

    摘要翻译: 用于识别磁图像的磁阻磁性成像传感器包括PCB(1)和几个磁阻传感器芯片(2),其中几个磁阻传感器芯片(2)位于PCB(1)上,并且PCB(1)是 垂直或平行于磁图像检测表面(3)。 它具有横向检测模式和前端检测模式。在横向检测模式中,若干磁阻传感器芯片(2)的每个侧面(2(1))与所述侧面检测模式的侧面(1(1))平行或共面 PCB(1),并平行于磁图像检测表面。 几个磁阻传感器芯片(2)具有相同的磁感应方向。 在横向检测模式中,相邻的磁阻传感器芯片(2)堆叠,而在前检测模式中,相邻的磁阻传感器芯片(2)以交错的方式布置,以便实现连续的检测区域 磁图像检测面。 磁阻磁性成像传感器还可以包括永磁体组件和壳体。 传感器具有几个优点,包括检测区域的连续性,良好的信号再现,高灵敏度和低功耗。

    SHORT-DISTANCE MAGNETORESISTANCE IMAGING SENSOR ARRAY
    13.
    发明公开
    SHORT-DISTANCE MAGNETORESISTANCE IMAGING SENSOR ARRAY 审中-公开
    BILDSENSORARRAY-MAGNETWIDERSTAND MIT KURZER REICHWEITE

    公开(公告)号:EP3091363A1

    公开(公告)日:2016-11-09

    申请号:EP14876525.8

    申请日:2014-12-29

    IPC分类号: G01R33/09

    摘要: A low profile magnetoresistive imaging sensor array (71) based on the principle of magnetic induction, which reduces a distance (98) between a medium imaging sensor array (71) and a medium (10) by optimizing the arrangement of an application integrated circuit and a sensing element array and using an electric connection technology which can reduce the distance (98) between the medium imaging sensor array (71) and the medium (10), thereby increasing the resolution of the existing medium imaging sensor. The low profile magnetoresistive imaging sensor array (71) comprises a sensing element array and an application integrated circuit, and also comprises a circuit which provides a power for the sensing element array, a magnetoresistive sensing element array selection circuit, a signal amplification circuit, a digitizer, a memory circuit, and a microprocessor. Additionally, the sensing element array comprises at least one magnetoresistive sensing element.

    摘要翻译: 一种基于磁感应原理的低剖面磁阻成像传感器阵列(71),其通过优化应用集成电路的布置来减小介质成像传感器阵列(71)和介质(10)之间的距离(98) 感测元件阵列,并且使用可以减小介质成像传感器阵列(71)和介质(10)之间的距离(98)的电连接技术,从而提高现有介质成像传感器的分辨率。 薄型磁阻成像传感器阵列(71)包括感测元件阵列和应用集成电路,并且还包括为感测元件阵列提供电力的电路,磁阻感测元件阵列选择电路,信号放大电路, 数字转换器,存储器电路和微处理器。 另外,感测元件阵列包括至少一个磁阻感测元件。

    MAGNETIC FIELD SENSING DEVICE
    14.
    发明公开
    MAGNETIC FIELD SENSING DEVICE 有权
    MAGNETFELDSENSOR

    公开(公告)号:EP2790030A1

    公开(公告)日:2014-10-15

    申请号:EP12847626.4

    申请日:2012-09-26

    IPC分类号: G01R33/09

    摘要: The present invention discloses a magnetic field sensing device that utilizes a single coil for calibrating the response of the sensor to compensate for temperature dependent sensitivity drift and also for resetting the magnetic field sensor in order to eliminate hysteresis. The single coil configuration is advantageous since it reduces the size of the sensor chip by decreasing the number of contact pads on the chip and also because it wastes less space, which permits an increase in the density of the magnetoresistive elements on the sensor chip.

    摘要翻译: 本发明公开了一种磁场感测装置,其利用单个线圈来校准传感器的响应以补偿与温度相关的灵敏度漂移,并且还用于复位磁场传感器以消除滞后。 单线圈配置是有利的,因为它通过减少芯片上的接触焊盘的数量而减小传感器芯片的尺寸,并且还因为其浪费更少的空间,这允许增加传感器芯片上的磁阻元件的密度。

    SINGLE-CHIP REFERENCE FULL-BRIDGE MAGNETIC FIELD SENSOR
    15.
    发明公开
    SINGLE-CHIP REFERENCE FULL-BRIDGE MAGNETIC FIELD SENSOR 审中-公开
    VOLLBRÜCKEN-MAGNETFELDSENSOR MIT EINZELCHIPREFERENZ

    公开(公告)号:EP2700968A1

    公开(公告)日:2014-02-26

    申请号:EP12773589.2

    申请日:2012-04-06

    IPC分类号: G01R33/09

    CPC分类号: H01L43/02 G01R33/098

    摘要: The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.

    摘要翻译: 本发明公开了一种单芯片参考全桥磁阻磁场传感器。 单芯片传感器是一种惠斯登电桥布置的磁阻感测元件和参考元件。 传感元件和参考元件由磁隧道结或巨磁阻材料形成。 参考和传感器元件的灵敏度通过磁偏置,交换偏压,屏蔽或形状各向异性的一种或组合来控制。 此外,通过将参考电缆和传感器臂电阻值的比率设置为优化桥接输出的偏移和对称性的预定比率来调节桥输出。 本发明的单芯片参考桥磁场传感器表现出优异的温度稳定性,低失调电压和优异的电压对称性。

    SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR
    16.
    发明公开
    SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR 有权
    爱尔兰电力公司 - 瑞典电磁感应器

    公开(公告)号:EP2696210A2

    公开(公告)日:2014-02-12

    申请号:EP12767837.3

    申请日:2012-05-23

    IPC分类号: G01R33/09

    CPC分类号: G01R33/098

    摘要: The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions

    摘要翻译: 本发明公开了一种基于集成在半导体衬底上的磁隧道结(MTJ)元件和永磁体的单芯片双轴磁场传感器的设计,以产生检测正交磁场分量的两种传感器桥。 正交磁场成分检测能力来自可以通过改变MTJ元件的形状和可由永磁体产生的偏置场来产生的不同类型的传感器桥。 因为永磁体可以在不同的传感器桥上产生正交偏置场,所以可以使用单个固定层来设置两个传感器桥的方向。 这是有利的,因为它允许将双轴传感器制造在单个半导体芯片上,而不需要专门的处理技术,例如局部加热或沉积具有不同钉扎层的多个磁阻膜设置方向

    CURRENT MEASUREMENT DEVICE
    17.
    发明公开

    公开(公告)号:EP4414718A1

    公开(公告)日:2024-08-14

    申请号:EP22877847.8

    申请日:2022-09-14

    IPC分类号: G01R19/00 G01R15/20

    摘要: A current measurement device, comprising three or more different positions, wherein each position has at least two magnetoresistances. The two magnetoresistances are two magnetoresistances which respectively have a first sensing direction and an opposite second sensing direction. Within a set range, the resistance value of the magnetoresistance has a linear relationship with a magnetic field at the position where the magnetoresistance is located. The sensing directions of all magnetoresistances at different positions are the same or opposite. A magnetic field to be measured has a component in the sensing direction of the magnetoresistance. At least at one position the component in the sensing direction of said magnetic field is different from components in the sensing direction of said magnetic fields at other positions. All the magnetoresistances are electrically connected to form a resistance network in which an output signal includes the signals of said magnetic fields, and does not include or includes an interference magnetic field signal that is less than a first preset intensity. The current measurement device eliminates the interference of an interference magnetic field with current measurement.

    MEMS ENVIRONMENTAL SENSOR AND PREPARATION METHOD THEREFOR

    公开(公告)号:EP4137783A1

    公开(公告)日:2023-02-22

    申请号:EP21788421.2

    申请日:2021-04-15

    IPC分类号: G01D5/14 B81B7/02 B81C1/00

    摘要: The disclosed invention is a MEMS environmental sensor and preparation method thereof. A transfer cavity is produced in the middle of a transfer substrate of a MEMS environmental sensor, and a transfer medium is located inside the transfer cavity. The surface area of an input port is larger than the surface area of an output port. An elastic transfer membrane is provided on the surface of the input port, and an elastic pressure membrane is provided on the surface of the output port. A load bearing cavity is provided in a load bearing substrate, a magnetic sensing element is positioned inside the load bearing cavity, and the load bearing cavity partially overlaps with the output port. The surface area of the input port of the transfer cavity is larger than the surface area of the output port, and on the basis of Pascal's principle, differences in the volume of the transmission cavity are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. In addition, because the output port and the end of the output port at least partially overlap, and a magnetic sensing element is arranged in the load bearing cavity, a change in displacement is produced, producing a change in a magnetic field, that is converted into a change in electrical resistance, which provides high-sensitivity and low-power detection.

    CAPILLARY CHANNEL ENVIRONMENTAL SENSOR AND PREPARATION METHOD THEREFOR

    公开(公告)号:EP4137782A1

    公开(公告)日:2023-02-22

    申请号:EP21787928.7

    申请日:2021-04-15

    IPC分类号: G01D5/14

    摘要: Disclosed in the present invention are a capillary channel environmental sensor and a preparation method therefor. The capillary channel environmental sensor comprises a transfer cavity and at least one capillary channel. The cross sectional area of the transfer cavity is greater than the cross sectional area of the capillary channel, and one end of the capillary channel is connected with the transfer cavity; an elastic transfer diaphragm is provided between the transfer cavity and an external measurement environment. A positioned droplet is provided in the interior of the capillary channel, the positioned droplet is in tight contact with the inner walls of the capillary channel and the positioned droplet is in tight contact with a transfer medium. By means of the transfer cavity and the capillary channel that are connected to one another, because the cross sectional area of the transfer cavity is larger than the cross sectional area of the capillary channel, differences in volume between the transfer cavity and the capillary channel are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. Because the positioned droplet is provided in the capillary channel, and the capillary channel environmental sensor comprises a magnetic sensing element, the magnetic sensing element causes, on the basis of movement of the positioned droplet, the change in displacement through an intermediate variable to provide high-sensitivity and low-power detection.