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73 条记录 (耗时 0.015 秒)

    Component for an integrated optical system
    11.
    发明公开
    Component for an integrated optical system 失效
    组件，用于集成光学系统。

    公开(公告)号：EP0140431A1

    公开(公告)日：1985-05-08

    申请号：EP84201416.9

    申请日：1984-10-04

    申请人： Philips Electronics N.V.

    发明人： Haisma, Jan ,  Robertson, John Mackay ,  van der Werf, Pieter

    IPC分类号： G02B6/12

    CPC分类号： B82Y25/00 ,  G02B6/131

    摘要： Component for an integrated optical system, in particular for guiding electromagnetic radiation in the visible and/or infrared wavelength range, comprising a monocrystalline substrate of a material having a garnet structure and a refractive index n 1 , in which a dielectric layer having a refractive index n 2 (n 2 1 ) is grown epitaxially on a surface of the substrate and in which an optical waveguide layer having a refractive index n 3 (n 3 >n 2 ) is grown epitaxially on the dielectric layer.

    Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
    16.
    发明公开
    Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method 失效
    用于执行该方法形成的平坦衬底表面上的交联光致抗蚀剂，并且装置的图案化的浮雕图像的方法。

    公开(公告)号：EP0623440A1

    公开(公告)日：1994-11-09

    申请号：EP94200589.3

    申请日：1994-03-09

    申请人： Philips Electronics N.V.

    发明人： Haisma, Jan ,  Verheijen, Martinus Johannes ,  Schrama, Johannes Thomas

    IPC分类号： B29C43/22 ,  B29C35/10 ,  B29C43/28 ,  G03F7/20

    CPC分类号： B29C39/148 ,  B29C35/0888 ,  B29C35/10 ,  B29C2035/0827 ,  G03F7/2012

    摘要： A description is given of a method and a device (1) for providing (replicating) a patterned resyntetic resin relief (37) on the surface (25) of a glass substrate (27). For this purpose, a UV-curable acrylate lacquer (33) is applied to the surface (25), after which a transparent mould (3) having a relief (13) is rolled-off over the surface (25). By means of a UV light source (17) and an elliptic mirror (21), the lacquer is cured at the location of the focal line (23), thereby forming said relief (37). The relief (13) of the mould (3) is replicated on the glass substrate (27). The method described enables a relief of small dimensions (10 x 10 µm) to be seamlessly provided on a large flat surface (1 x 1 m), without being hindered by large release forces.

    摘要翻译： 需要说明的是用于玻璃基板（27）的表面（25）上提供（复制）的图案化resyntetic树脂凸版（37）给定的方法和装置（1）的。 为了这个目的，可UV固化的丙烯酸酯漆（33）施加到表面（25），afterwhich透明模具（3）具有浮雕（13）滚降的表面（25）上。 通过UV光源（17）的和椭圆镜（21）的装置，该漆在焦线（23）的位置固化，从而形成所述浮雕（37）。 模具（3）的浮雕（13）被复制在玻璃基板（27）。 所描述的方法允许小尺寸的浮雕（10×10微米），以无缝地设置在一个大的平坦表面（1×1米），而不会被大量释放力的阻碍。

    Method of manufacturing a plate having a plane main surface, method of manufacturing a plate having parallel main surfaces, and device suitable for implementing said methods
    17.
    发明公开
    Method of manufacturing a plate having a plane main surface, method of manufacturing a plate having parallel main surfaces, and device suitable for implementing said methods 失效
    制造具有制造具有用于Druchführen程序平行的主表面和装置的板的平面主表面，方法的板的方法。

    公开(公告)号：EP0579298A1

    公开(公告)日：1994-01-19

    申请号：EP93201632.2

    申请日：1993-06-08

    申请人： Philips Electronics N.V.

    发明人： Haisma, Jan ,  De Haas, Peter Wilhelmus ,  Van der Kruis, Franciscus Josephus Henri Maria ,  Vijfvinkel, Jakob

    IPC分类号： B24B37/04

    CPC分类号： B24B37/08 ,  B24B37/12

    摘要： Methods and device for manufacturing a plate (3) with a plane main surface or with parallel main surfaces (35,37), whereby material is taken off from the edges of the plate (3) and from the central portion of the plate (3) alternately by means of polishing in order to obtain main surfaces (35,37) having a convex, plane, or concave shape. Polishing is stopped after at least one transition from convex to concave or vice versa at the moment at which the main surface has a substantially plane shape or has substantially parallel main surfaces (35,37).

    摘要翻译： 的方法和设备用于制造板（3）与一个平面主表面或具有平行的主表面（35,37），由此材料从板的边缘取出（3）和从所述板的中央部分（3 ）交替，以便获得主表面（35,37抛光），具有凸的，平的或凹的形状的手段。 抛光是在在其中主面具有平面形状或基本上具有基本上平行的主表面（35.37）的时刻从凸向凹形或反之亦然至少一种过渡后停止。

    Signal processing device
    18.
    发明公开
    Signal processing device 失效
    Signalverarbeitungsanordnung。

    公开(公告)号：EP0542323A1

    公开(公告)日：1993-05-19

    申请号：EP92203081.2

    申请日：1992-10-07

    申请人： Philips Electronics N.V.

    发明人： Widdershoven, Franciscus Petrus ,  Haisma, Jan

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02976

    摘要： The invention provides a signal processing device comprising sampling means (31, 41, 32) for sampling an input signal in the form of charge carrier packages and a shift register (4) having an input region (41) to which a signal sample is offered during operation, and provided with transport means (2) for transporting the signal sample to an output region (42) of the shift register. The device according to the invention is capable of adapting itself to the frequency with which the input signal is sampled in such a way that the storage of the increase in signal samples which accompanies an increase in the sampling frequency does not require additional space. For this purpose, according to the invention, the shift register comprises a transport channel (4) in which an electron-hole liquid can exist. The sampling means (31, 41, 32) are capable of sampling the input signal in the form of electron-hole droplets (71 ... 74) which are transported through the shift register by means of an acoustic wave generated by the transport means.

    摘要翻译： 本发明提供了一种信号处理装置，其包括用于对电荷载体封装形式的输入信号进行采样的采样装置（31,41,32）和具有输入区域（41）的移位寄存器（4），向其提供信号样本 并且设置有用于将信号样本传送到移位寄存器的输出区域（42）的传送装置（2）。 根据本发明的装置能够使其自身适应于输入信号被采样的频率，使得伴随采样频率增加的信号样本的增加的存储不需要额外的空间。 为此，根据本发明，移位寄存器包括其中可存在电子 - 空穴液体的输送通道（4）。 采样装置（31,41,32）能够以通过移动寄存器传输的电子 - 空穴液滴（71-74）形式的输入信号进行采样，借助于由传送装置产生的声波 。

    Method of manufacturing a silicon body having an n-type top layer and an adjoining, more highly doped n-type base layer
    20.
    发明公开
    Method of manufacturing a silicon body having an n-type top layer and an adjoining, more highly doped n-type base layer 失效
    制造具有相邻的硅体的方法，更高度掺杂的n型基极层。

    公开(公告)号：EP0454236A1

    公开(公告)日：1991-10-30

    申请号：EP91200935.4

    申请日：1991-04-19

    申请人： Philips Electronics N.V.

    发明人： Widdershoven, Franciscus Petrus ,  Haisma, Jan ,  De Kock, Arie Jan Rudolf ,  Van Gorkum, Aart Adrianus

    IPC分类号： H01L21/18 ,  H01L21/22

    CPC分类号： H01L29/6609 ,  H01L21/187 ,  H01L29/66295 ,  Y10S148/012

    摘要： A method of manufacturing a silicon body (5) having an n-type top layer (1') and an adjoining, more highly doped n-type base layer (2'), by which a first, n-type silicon slice (1) and a second, more highly doped n-type silicon slice (2) are put one on the other and then bonded together by heating. To obtain a low contact resistance between top layer (1') and base layer (2'), a boundary layer having a higher doping than the toplayer (1') is provided in the top layer (1') adjoining the base layer (2'). According to the invention, the boundary layer is formed by diffusion of an n-type dopant (11, 14) into the first slice (1) from the second slice (2) during heating. The concentration of the n-type dopant (11, 14) is taken so high in this case that boron (12) present as an impurity is overdoped, so that undesired pn transitions cannot occur. Measures according to the invention present the advantage that pollution of the first slice (1) is counteracted, while in addition the boundary layer is given a steep concentration profile. Semiconductor devices manufactured in body (5) will as a result have a comparatively high switching speed and a comparatively low forward bias.

    摘要翻译： 制造具有n型顶层（1“）的硅体（5）的方法，和邻接的，更高度掺杂的n型基极层（2”），通过该第一，n型硅切片（1 ）和第二，更高度掺杂的n型硅片（2）被放置为一个在另一个和然后通过加热粘结在一起。 为了获得所述顶层（1“）和基体层（2”），具有比所述顶层（1“）高的掺杂的边界层之间的低接触电阻在顶层（1设置”）中的基极层相邻的（ 2“）。 。根据本发明，边界层由n型掺杂剂（11，14）到从第二片（2）在加热过程中所述第一切片（1）的扩散而形成。 的n型掺杂剂（11，14）的浓度被取如此之高在这种情况下没有硼（12）存在于杂质过量掺杂所以没有不期望的PN转变不会发生。 呈现优点gemäß发明措施做的第一片（1）的污染被抵消，而在另外的边界层被给予一个陡峭的浓度分布。 制造的半导体器件希望在主体（5），结果具有相对高开关速度和相对低的正向偏压。