公开(公告)号：EP1796150B1

公开(公告)日：2018-05-16

申请号：EP05781000.4

申请日：2005-08-26

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao

IPC分类号： H01L21/205 ,  C23C16/34

CPC分类号： H01L21/0262 ,  C30B23/002 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  Y10T117/10

摘要： An epitaxial growing method in which a crystal of AlxGa1-xN wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process. Crystal of AlxGal-xN is grown according to the HVPE process in which use is made of an aluminum material, a gallium material, an ammonia material and a carrier gas. The carrier gas consists of an inert gas and hydrogen, and the partial pressure of hydrogen is set so as to range from 0 to

公开(公告)号：EP2570523A1

公开(公告)日：2013-03-20

申请号：EP11780659.6

申请日：2011-05-11

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/14 ,  H01L21/205

CPC分类号： H01L21/02107 ,  C01G15/00 ,  C23C16/303 ,  C23C16/4488 ,  C30B25/00 ,  C30B25/14 ,  C30B29/403 ,  C30B35/007 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262

摘要： According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

摘要翻译： 根据本发明，提供了一种制备三氯化镓气体的方法，该方法包括：第一步，使金属镓和氯气反应以产生一氯化镓气体; 以及使所产生的一氯化镓气体和氯气反应以产生三氯化镓气体的第二步骤。

公开(公告)号：EP2243866A1

公开(公告)日：2010-10-27

申请号：EP08870572.8

申请日：2008-12-16

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

发明人： NAGASHIMA, Toru ,  HAKOMORI, Akira ,  TAKADA, Kazuya ,  ISHIZUKI, Masanari ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao

IPC分类号： C30B29/38 ,  C30B25/18

CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.

摘要翻译： 本发明是生产的层叠体，其包括以下步骤的方法：（1）制备具有形成在单晶的表面上的基底基板的所有这是从构成Al系III族氮化物单晶层的材料不同 要形成; （2），其具有的厚度为所制备的基底基板的单晶表面上10纳米至1.5微米的Al系III族氮化物单晶层的形成; （3）在形成Al系III族氮化物单晶层上形成非单晶层是不破坏先前获得的Al系基团比的Al系III族氮化物单晶层的100倍或更厚 -III族氮化物单晶层; 和（4）除去所述基底基板。 该方法提供了可以适合用作基底基板在Al系III族氮化物单晶自支撑衬底的制造中，该表面形成的Al系III族氮化物的单晶构成的基底， 而所有这一切是从开裂和翘曲免费。