摘要:
A curable composition which comprises a carbonate-based polymerizable monomer represented by the following formula, other polymerizable monomers and a photochromic compound, can be used even under high-temperature and high-humidity conditions without any problems and provides a cured product having excellent photochromic properties. wherein A and A' are each a linear or branched alkylene group having 2 to 15 carbon atoms, "a" is an average value of 1 to 20, when there are a plurality of A' s, A's may be the same or different, R 1 is a hydrogen atom or methyl group, and R 2 is a (meth)acryloyloxy group or hydroxyl group.
摘要:
[Problem] To provide a method for producing sintered aluminum nitride granules, which have high thermal conductivity and an excellent property of being filled in a resin, have an average grain diameter of 10 to 200 µm, and are useful as a filler for heat-releasing materials such as a heat-releasing resin, grease, adhesive agent or coating agent, in a simple manner. [Solution] The method for producing sintered aluminum nitride granules according to the present invention is characterized by comprising: a reduction nitridation step of carrying out the reduction nitridation of porous alumina granules at a temperature of 1400 to 1700°C inclusive to produce porous aluminum nitride granules; and a sintering step of sintering the porous aluminum nitride granules, which are produced in the reduction nitridation step, at a temperature of 1580 to 1900°C inclusive.
摘要:
A neutron scintillator composed of a resin composition comprising (A) an inorganic phosphor containing at least one neutron capture isotope selected from lithium 6 and boron 10 and (B) a resin, wherein the inorganic phosphor is a particle having a specific surface area of 50 to 3,000 cm 2 /cm 3 , and the internal transmittance based on 1 cm of the optical path length of the resin composition is 30 %/cm or more at the emission wavelength of the inorganic phosphor.
摘要:
[Problem] The purpose of the present invention is to provide a highly efficient, high quality group-III nitride semiconductor element, and to provide a novel aluminum nitride substrate (aluminum nitride single crystal substrate) for fabricating the group-III nitride semiconductor element. [Solution] A substrate comprising aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05°to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.