公开(公告)号：EP0599937B1

公开(公告)日：1996-01-10

申请号：EP92917673.3

申请日：1992-08-14

申请人： SELA CO.-SEMICONDUCTOR ENGINEERING 1992 LTD.

发明人： SMITH, Colin ,  KAUFMAN, Kalman ,  MAZOR, Isaac ,  CHEN, Elik ,  VILENSKI, Dan

IPC分类号： H01L21/00

CPC分类号： B28D5/0094 ,  B28D5/0005 ,  B28D5/0023 ,  B28D5/0064 ,  Y10T225/10 ,  Y10T225/12

摘要： A method and apparatus are described for cleaving a relatively thin semiconductor wafer for inspecting a target feature on a workface thereof by: producing, on a first lateral face of the semiconductor wafer, laterally of the workface on one side of the target feature, an indentation in alignment with the target feature; and inducing, e.g., by impact, in a second lateral face of the semiconductor wafer, laterally of the workface on the opposite side of the target feature, a shock wave substantially in alignment with the target feature and the indentation on the first lateral face, to split the semiconductor wafer along a cleavage plane essentially coinciding with the target feature and the indentation.

公开(公告)号：EP0334751A1

公开(公告)日：1989-09-27

申请号：EP89400793.9

申请日：1989-03-21

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： Cornu, Claude ,  Poinard, André

IPC分类号： B28D5/04 ,  B28D7/04

CPC分类号： B28D5/0023 ,  B28D5/0052

摘要： L'invention permet le clivage d'une plaquette de silicium possédant au moins un méplat usiné sur sa circonférence et orienté à 90° par rapport aux lignes de clivage de la plaquette.
Le procédé consiste à :
- positionner la plaquette (2) sur un support (4) par rapport à un outil de contrainte (14) dans une position déterminée,
- fixer la plaquette (2) dans cette position,
- cliver la plaquette (2) par action contrôlée de l'outil, grâce aux contraintes de clivage permettant la rupture instantanée de la plaquette (2). Le dispositif de clivage comporte également un dispositif de visée (20) mobile en translation de même que l'outil de contrainte (14).
Application aux plaquettes de silicium utilisées en tant que supports pour circuits imprimés.

摘要翻译： 本发明使得能够切割硅晶片，其具有在其圆周上加工的至少一个平面并相对于晶片的分裂线定向90度。 该方法包括： - 将晶片（2）相对于确定位置处的应力工具（14）定位在支撑件（4）上， - 将晶片（2）固定在该位置， - 切割晶片（2） 通过切割应力，可以使晶片（2）的瞬时断裂成为可能的工具的受控作用。 劈裂装置还包括与压力工具（14）相同的方式平移移动的瞄准装置（20）。 适用于作为印刷电路支架使用的硅片。

公开(公告)号：EP2352163A3

公开(公告)日：2011-12-28

申请号：EP11151535.9

申请日：2011-01-20

申请人： Mitsuboshi Diamond Industrial Co., Ltd.

发明人： Soyama, Masanobu

IPC分类号： H01L21/67 ,  B28D5/00 ,  B28D5/04

CPC分类号： H01L21/67092 ,  B28D5/0023 ,  B28D5/0088 ,  H01L31/188 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T83/0304 ,  Y10T83/0348

摘要： [Object] To provide a scribing apparatus with which fine adjustment with a low load is possible, thin films on the solar cell substrate can be shaved off with precision, thin films can be prevented from peeling irregularly, and straight and precise scribe lines can be created.
[Means for Achieving Object]
A scribing apparatus for thin film solar cells with which the blade of a trench creating tool 4 that is attached to the scribe head 1 is pressed against the surface of a solar cell substrate along a line along which the integrated thin film solar cell substrate W is to be scribed when the trench creating tool 4 is moved over the solar cell substrate W, so that a trench is created in the thin film formed on the surface of the solar cell substrate W, comprising: a tool holder 5 that is attached to the scribe head 1 in such a manner as to be movable upward and downward and holds the trench creating tool 4; an air cylinder 6 for pressuring the tool holder 5 against the surface of the solar cell substrate W; and a spring 7 for pressuring the tool holder 5 upward.

公开(公告)号：EP1886782A1

公开(公告)日：2008-02-13

申请号：EP06756641.4

申请日：2006-05-26

申请人： Mitsuboshi Diamond Industrial Co., Ltd.

发明人： NISHISAKA, Y., MITSUBOSHI DIAMOND IND., CO., LTD. ,  OTODA, K., MITSUBOSHI DIAMOND IND., CO., LTD. ,  INOUE, S., c/o MITSUBOSHI DIAMOND IND., CO., LTD. ,  KUMAGAI, T., MITSUBOSHI DIAMOND IND. CO, LTD.

IPC分类号： B28D5/00 ,  C03B33/033

CPC分类号： C03B33/033 ,  B28D1/222 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0029 ,  B65G2249/04 ,  Y02P40/57 ,  Y10T83/0333 ,  Y10T225/30 ,  Y10T225/325

摘要： A brittle material substrate cutting method and cutting apparatus are provided, which prevent cut faces of a brittle material substrate from contacting each other after the cutting in a break step of continuously cutting the brittle material substrate, so that a damage or contamination on the brittle material substrate due to the contact can be prevented. A brittle material substrate cutting apparatus includes: a cutting section ( 112, 122 ) for applying a pressing force in a vicinity of a scribe line S formed on a substrate G and cutting the pressed portion of the substrate G; and a holding section moving parallel to the scribe line S while holding the cutting section. The brittle material substrate cutting apparatus continuously cuts the substrate G along the scribe line S. The brittle material substrate cutting apparatus further includes: a cut-face separating section ( 113, 123 ), provided in the holding section, for holding and pressing at least one part of cut substrate portions of the substrate G, wherein the cut substrate portions are generated as a result of the cutting and they oppose each other, and moving cut faces of the cut substrate portions approximately parallel to a main face of the substrate G and in directions to separate the cut faces from each other.

摘要翻译： 提供一种脆性材料基板切割方法和切割装置，其在连续切割脆性材料基板的断裂步骤中，在脆性材料基板的切割面彼此接触之后彼此接触，从而对脆性材料造成损坏或污染 可以防止由于接触引起的基板。 脆性材料基板切割装置包括：切割部分（112,122），用于在形成在基板G上的划线S附近施加按压力，并切割基板G的按压部分; 以及在保持切割部的同时平行于划线S移动的保持部。 脆性材料基板切断装置沿着切割线S连续切割基板G.脆性材料基板切割装置还包括：切割面分离部（113,123），设置在保持部中，用于至少保持和按压 基板G的切割基板部分的一部分，其中切割的基板部分由于切割而产生并且彼此相对，并且切割的基板部分的切割面大致平行于基板G的主面移动，并且 在将切割面彼此分开的方向上。

公开(公告)号：EP1469981A1

公开(公告)日：2004-10-27

申请号：EP03712201.7

申请日：2003-01-02

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： RAYSSAC, Olivier ,  LETERTRE, Fabrice

IPC分类号： B28D5/00

CPC分类号： H01L21/76254 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0052 ,  B28D5/0064 ,  H01L21/2007 ,  Y10T29/53274 ,  Y10T83/0267 ,  Y10T83/04 ,  Y10T83/364 ,  Y10T156/1059 ,  Y10T156/1184 ,  Y10T156/1189 ,  Y10T156/1961 ,  Y10T156/1967 ,  Y10T156/1972 ,  Y10T225/10 ,  Y10T225/12 ,  Y10T225/30 ,  Y10T225/307 ,  Y10T225/35 ,  Y10T225/386

摘要： The invention concerns a device for automatic high-precision cutting of a material layer (20a) which is integral with a source substrate (20b) via a weakened zone (200c), the source substrate and the layer to be cut forming together an assembly to be cut (20), the device comprising cutting means (101, 102) as well as means for retaining (100a, 100b) the assembly to be cut. The invention is characterized in that the retaining means are designed for controlled displacement so as to accompany actively the divergence and/or the deformation of each part of the assembly to be cut, and to rectify said divergence and/or said deformation. The invention also concerns a corresponding automatic cutting method.

公开(公告)号：EP0610657B1

公开(公告)日：2002-04-24

申请号：EP94100206.5

申请日：1994-01-07

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Mignardi,Michael A. ,  Alfaro,Rafael C.

IPC分类号： H01L21/78 ,  H01L21/304 ,  B28D5/00

CPC分类号： B81C1/00896 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0047 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/78 ,  Y10S148/028 ,  Y10T156/1064 ,  Y10T225/12

公开(公告)号：EP0951980A2

公开(公告)日：1999-10-27

申请号：EP99201233.6

申请日：1999-04-22

申请人： Sela Semiconductor Engineering Laboratories Ltd.

发明人： Boguslavsky, Dmitri ,  Smith, Colin ,  Ben-Nathan, Arnon

IPC分类号： B28D5/00

CPC分类号： B28D5/0023 ,  Y10T225/325 ,  Y10T225/371

摘要： Apparatus (10) for cleaving a crystalline segment (12), including a pair of aligning pins (24) facing a first cleave plane (16) formed on a first side of a crystalline segment (12), an impact pin (22) facing a second cleave plane (17) formed on a second side of the crystalline segment (12) opposite to the first side, the crystalline segment (12) having a cleave line (14) extending between and generally perpendicular to the opposing cleave planes (16, 17), and an actuator (26) connected to at least one of the aligning pins (24) and the impact pin (22), for causing relative movement of the aligning pins (24) and the impact pin (22) towards each other, such that the aligning pins (24) abut against the first cleave plane (16) and the impact pin (22) abuts against the second cleave plane (17).

公开(公告)号：EP0289045B1

公开(公告)日：1994-07-06

申请号：EP88106915.7

申请日：1988-04-29

申请人： SUMITOMO ELECTRIC INDUSTRIES LIMITED

发明人： Nishiguchi, Masanori Yokohama Works ,  Sekiguchi, Takeshi Yokohama Works ,  Tato, Nobuyoshi Yokohama Works

IPC分类号： H01L21/00

CPC分类号： B28D5/0023 ,  B28D5/0052 ,  Y10T225/304 ,  Y10T225/325 ,  Y10T225/371 ,  Y10T225/386

公开(公告)号：EP0599937A1

公开(公告)日：1994-06-08

申请号：EP92917673.0

申请日：1992-08-14

申请人： SELA SEMICONDUCTOR ENGINEERING LABORATORIES ,  SMITH, Colin

发明人： SMITH, Colin ,  KAUFMAN, Kalman ,  MAZOR, Isaac ,  CHEN, Elik ,  VILENSKI, Dan

IPC分类号： H01L21 ,  B28D5

CPC分类号： B28D5/0094 ,  B28D5/0005 ,  B28D5/0023 ,  B28D5/0064 ,  Y10T225/10 ,  Y10T225/12

摘要： Un procédé et un appareil permettent de cliver une tranche relativement mince de semi-conducteurs afin d'inspecter une caractéristique souhaitée sur sa surface active. Sur la première pièce latérale de la tranche, sur le chant de la surface active, d'un côté de la caractéristique souhaitée, on produit une indentation alignée avec ladite caractéristique; sur l'autre face latérale de la tranche, sur le chant de la tranche situé de l'autre côté de la caractéristique souhaitée, on induit, par un impact par exemple, une onde de choc pour scinder la tranche le long d'un plan de clivage s'alignant sensiblement avec la caractéristique souhaitée et l'indentation.

公开(公告)号：EP0346997A3

公开(公告)日：1990-12-12

申请号：EP89201533.0

申请日：1989-06-14

申请人： AISA S.p.A.

发明人： Barozzi, Gian Piero

IPC分类号： H01L21/00 ,  B28D5/00

CPC分类号： H05K3/0052 ,  B28D5/0023 ,  B28D5/0052 ,  H05K1/0306 ,  H05K2201/0909 ,  H05K2203/302 ,  Y10T225/325 ,  Y10T225/329 ,  Y10T225/371

摘要： Apparatus for the automatic separation, along predetermined bending fracture lines, in basic ceramic platelets of hybrid electronic circuits, which apparatus comprises a support plate, provided with grooves on its lower face extending into close proximity with its upper face, these grooves defining bending lines, disposed in correspondence with the bending fracture lines of a ceramic platelet placed in register above said plate, which grooves define relative bays of the plate which are rigid in bending, these bays corres­ponding to the single elements into which the platelet is to be subdivided, upper pressing members being present adapted for clamping each element of the platelet against the corresponding bay or square of the plate, which is rigidly supported in correspondence with one single bay or square, lower opposing members being present, acting against each of the remaining bays, these members being retractable on command in a predetermined sequence, the successive bending of the plate along the lines defined by the grooves of said plate being brought about by the action of the upper pressing members, said bending causing the fracture of the ceramic platelet along the predetermined lines coinciding with the grooves of the plate.