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公开(公告)号：EP1751055A1
公开(公告)日：2007-02-14
申请号：EP05718738.7
申请日：2005-04-15
CPC分类号： C30B11/12 , B82Y15/00 , B82Y30/00 , C30B29/605
摘要： The invention provides nanostructures, being arrays of nanosized filamentary material such as carbon nanotubes (CNTs) and other nanomaterials and especially to such materials connected to a substrate such as at least one top electrode and one bottom electrode, and to a method for manufacturing such nanostructures. A device according to the present invention comprises a first and a second layer (11, 13) separated from each other; and nanosized filamentary material (10) grown between said first and said second layer (11, 13). The shape and size of the nanosized filamentary material is determined by the shape and size of the second layer. A corresponding method for growing the nanosized filamentary material is also provided.
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公开(公告)号：EP1747577A2
公开(公告)日：2007-01-31
申请号：EP05779674.0
申请日：2005-04-29
申请人： Nanosys, Inc.
发明人： PAN, Yaoling , DUAN, Xiangfeng , DUBROW, Bob , GOLDMAN, Jay , MOSTARSHED, Shahriar , NIU, Chunming , ROMANO, Linda T. , STUMBO, Dave
IPC分类号： H01L21/20
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
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公开(公告)号：EP1049813B1
公开(公告)日：2006-08-23
申请号：EP99956143.4
申请日：1999-11-25
发明人： LEYCURAS, André
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The invention concerns a method for chemical vapour deposition of coats of a material on a substrate (10) extending globally in a plane, comprising: a step which consists in arranging the substrate (10) in a conduit (6) made of a refractory material and swept by the gas components required for deposition, said conduit (6) being interposed between the substrate (10) and first (8) and second (9) heating means, located on either side of the substrate (10) plane, characterised in that it further comprises a step which consists in heating the substrate (10) by the thermal radiation from the conduit (10) which is itself heated by the first (8) and second (9) heating means.
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14.发明公开
公开(公告)号：EP1428912A3
公开(公告)日：2004-06-23
申请号：EP04003550.3
申请日：1998-03-25
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
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15.发明公开
公开(公告)号：EP1428912A2
公开(公告)日：2004-06-16
申请号：EP04003550.3
申请日：1998-03-25
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
摘要翻译： 提供了制备化合物半导体晶体的方法，使化合物半导体晶体以高重现性掺杂有碳。 该方法包括以下步骤：在不透气的气密容器中密封半导体原料和氧化硼基物质，并升高所述气密容器的温度以熔化所述气密容器中的所述原料和所述氧化硼基物质，从而形成 来自所述原材料的熔融材料; 并降低所述气密容器的所述温度以固化所述熔融材料，由此使包含所得碳含量的所述化合物半导体晶体生长，选择碳氧化物气体的分压，并使所述碳氧化物气体与所述熔化材料共存， 使得所述碳的所述所得含量取决于所述选定的所述碳氧化物气体的分压。 利用该方法，还以高重复性制备碳浓度为0.1×1015cm-3至20×1015cm-3的化合物半导体晶体。
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公开(公告)号：EP1049820A1
公开(公告)日：2000-11-08
申请号：EP99956144.2
申请日：1999-11-25
发明人： LEYCURAS, André
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The invention concerns a method for epitaxial growth of a material on a first solid material (100) from a material melting on the first material (100), characterised in that it comprises: a step (a) of growth of the first material (100) on a substrate (10), made of a second material (200); a step (d, d') whereby crystalline tips of the first material (100) are made to grow from the contact surface between the first material (100) and the melting material; a step (f, f') which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.
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公开(公告)号：EP0713542B1
公开(公告)日：2000-07-19
申请号：EP94913850.7
申请日：1994-04-27
发明人： POROWSKI, Sylwester , JUN, Jan , GRZEGORY, Izabella , KRUKOWSKI, Stanislaw , WROBLEWSKI, Miroslaw
CPC分类号： H01L33/325 , C30B11/12 , C30B29/403 , C30B29/406 , H01L33/0075
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18.发明公开PROCEDE DE PREPARATION DE NANOFILS DE SILICIUM 审中-公开VERFAHREN ZUR HERSTELLUNG VON SILICIUM-NANODRÄHTEN
公开(公告)号：EP3154903A1
公开(公告)日：2017-04-19
申请号：EP15734462.3
申请日：2015-06-12
发明人： CHENEVIER, Pascale , REISS, Peter , BURCHAK, Olga
IPC分类号： C01B33/027 , B82Y40/00 , C01B33/029 , C30B25/00 , H01M4/134
CPC分类号： C23C16/24 , B82Y40/00 , C01B33/027 , C01B33/029 , C01P2004/16 , C01P2006/40 , C23C16/01 , C23C16/44 , C30B11/12 , C30B25/005 , C30B29/06 , C30B29/60 , C30B29/62 , H01G11/30 , H01M4/386 , H01M10/052 , H01M10/0525 , Y02E60/13
摘要： The invention relates to a method for producing a material based on silicon nanowires, comprising the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal comprising metal nanoparticles, with the pyrolysis vapours of a silicon source comprising a silane compound, by which means silicon nanowires are deposited on said sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).
摘要翻译： 提供了一种制备基于硅纳米线的材料的方法。 该方法包括以下步骤：i）在惰性气氛中使基于碱金属，碱土金属或具有金属纳米粒子的过渡金属的卤化物，碳酸盐，硫酸盐或硝酸盐的牺牲载体接触 ，其中具有硅烷化合物的硅源的热分解蒸气，通过其硅纳米线沉积在牺牲载体上; 并且可选地，ii）消除牺牲支持并回收在步骤ii）中产生的硅纳米线。
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公开(公告)号：EP2785646A1
公开(公告)日：2014-10-08
申请号：EP12794955.0
申请日：2012-11-29
申请人： Neoker, S.L
发明人： CERECEDO FERNÁNDEZ, Carmen , VALCÁRCEL JUÁREZ, Víctor , GUITIÁN RIVERA, Francisco , CAAMAÑO CASTRO, José Miguel , RODRÍGUEZ CARREIRA, Alfredo
CPC分类号： C01F7/46 , C01F7/02 , C01F7/027 , C01P2002/85 , C01P2004/03 , C01P2004/10 , C30B11/12 , C30B29/20 , C30B29/62 , C30B33/02
摘要： The present invention relates to a method for the purification of ±-Al 2 O 3 whiskers previously obtained by vapor-liquid-solid deposition, under metal vapors-containing atmospheres. Said method involves the volatilization of metal impurities in controlled-atmosphere furnaces at the surface of the fibers and from the drops at the end of the fibers. The invention also relates to purified ±-Al 2 O 3 whiskers obtainable by a process as defined above and substantially free from metal impurities at the surface and at the end part of the fibers, as well as the use of the purified ±-Al 2 O 3 whiskers as defined above as fillers or reinforcement agents for the preparation of ceramic, metallic or polymeric composites.
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20.发明授权PRECISELY POSITIONED NANOWHISKER STRUCTURES AND METHOD FOR PREPARING THEM 有权精密POSITIONED纳米晶须结构及其制造方法
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