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公开(公告)号：EP2389674A2
公开(公告)日：2011-11-30
申请号：EP10733903.8
申请日：2010-01-22
发明人： JEDDELOH, Joe, M.
IPC分类号： G11C29/00
CPC分类号： G11C29/44 , G11C5/04 , G11C29/4401 , G11C29/76 , G11C2029/1208 , H01L25/18 , H01L27/0688 , H01L27/105 , H01L27/10897 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： Memory devices and methods are described that include a stack of memory dies and a logic die. Method and devices described include those that provide for repartitioning the stack of memory dies and storing the new partitions in a memory map. Repartitioning in selected configurations allows portions of memory to be removed from use without affecting the rest of the memory device. Additional devices, systems, and methods are disclosed.
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公开(公告)号：EP2374134A2
公开(公告)日：2011-10-12
申请号：EP10700606.6
申请日：2010-01-04
申请人： Sandisk Corporation
CPC分类号： G11C11/5621 , G06F12/0246 , G06F12/0866 , G06F12/0897 , G06F2212/7202 , G11C29/76 , G11C2211/5641
摘要： Techniques for the management of spare blocks in re-programmable non-volatile memory system, such as a flash EEPROM system, are presented. In one set of techniques, for a memory partitioned into two sections (for example a binary section and a multi-state section), where blocks of one section are more prone to error, spare blocks can be transferred from the more error prone partition to the less error prone partition. In another set of techniques for a memory partitioned into two sections, blocks which fail in the more error prone partition are transferred to serve as spare blocks in the other partition. In a complementary set of techniques, a 1-bit time stamp is maintained for free blocks to determine whether the block has been written recently. Other techniques allow for spare blocks to be managed by way of a logical to physical conversion table by assigning them logical addresses that exceed the logical address space of which a host is aware.
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公开(公告)号：EP2015311B1
公开(公告)日：2011-06-08
申请号：EP08017121.8
申请日：2007-04-18
申请人： Hitachi Ltd.
发明人： Mizushima, Nagamasa
CPC分类号： G11C16/349 , G06F11/1068 , G11C5/04 , G11C16/04 , G11C16/3495 , G11C29/4401 , G11C29/46 , G11C29/76 , G11C2029/0409 , G11C2029/0411
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公开(公告)号：EP1914757A3
公开(公告)日：2010-09-01
申请号：EP07251753.5
申请日：2007-04-25
申请人： Hitachi, Ltd.
IPC分类号： G11C29/00
CPC分类号： G11C29/765 , G06F3/0616 , G06F3/064 , G06F3/0688 , G11C16/3495 , G11C29/76
摘要： To enable a capacity of an entire storage device (101) to be maintained by adding a flash drive (104) or a flash module (105) in a flash drive to replace a flash memory that has a failure, for example, the flash memory chip comprises blocks which have been erased a maximum number of times.
In a storage device (101) comprising two or more flash memory device units (105), each flash memory device unit comprising a plurality of semiconductor flash memory devices (107) which are divided into plural blocks (109) capable of being erased a limited number of times, a block (109) which has been erased this number of times is determined as unable to be written (worn out) and is substituted by a block in a different semiconductor flash memory device belonging to a different flash memory device unit than the flash memory device unit which contains the worn out block.-
15.发明公开
公开(公告)号：EP1864291A4
公开(公告)日：2009-04-08
申请号：EP06769791
申请日：2006-03-31
申请人： SANDISK 3D LLC
发明人： FASOLI LUCA G , SCHEUERLEIN ROY E
CPC分类号： G11C29/808 , G11C29/76 , G11C29/804 , G11C29/816
摘要： An integrated circuit memory array includes alternating first and second types of memory blocks, each memory block including respective array lines shared with a respective array line in an adjacent memory block. The array lines of a defective block of one type are mapped into a spare block of the same type. The array lines of a first adjacent block which are shared with array lines of the defective block, and the array lines of a second adjacent block which are shared with array lines of the defective block, are mapped into a second spare block of the other type, thereby mapping the defective block and portions of both adjacent blocks into just two spare blocks.
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16.发明公开System and method for using a memory mapping function to map memory defects 有权使用存储器映射功能来映射存储器缺陷的系统和方法
公开(公告)号：EP2026209A3
公开(公告)日：2009-04-01
申请号：EP08014500.6
申请日：2008-08-14
申请人： Dell Products, L.P.
CPC分类号： G06F11/1666 , G06F11/1417 , G06F2212/7207 , G11C5/04 , G11C29/76 , G11C29/88 , G11C2029/0407
摘要： In accordance with the present disclosure, a system and method are herein disclosed for managing memory defects in an information handling system. More particularly, the present disclosure comprises a system and method for generating a usable memory map which excludes memory locations containing defect memory elements. In an information handling system, a memory defect map, which comprises information about the location of defective memory elements, is coupled to the memory device. As a map of memory usable by the system is created, usable memory regions containing defective memory elements are excluded from the memory map. The memory map is passed to the operating system, which uses only those regions of memory designated as usable and non-defective.
摘要翻译： 根据本公开，这里公开了一种用于管理信息处理系统中的存储器缺陷的系统和方法。 更具体地说，本公开包括一种用于生成可用存储器映射的系统和方法，其排除了包含缺陷存储器元件的存储器位置。 在信息处理系统中，包括关于有缺陷的存储器元件的位置的信息的存储器缺陷映射被耦合到存储器设备。 由于系统可用的存储器地图被创建，包含有缺陷的存储器元件的可用存储器区域被从存储器映射中排除。 内存映射被传递给操作系统，该操作系统仅使用指定为可用和无缺陷的那些内存区域。
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公开(公告)号：EP1918939A1
公开(公告)日：2008-05-07
申请号：EP07251626.3
申请日：2007-04-18
申请人： Hitachi, Ltd.
CPC分类号： G11C16/349 , G06F11/1068 , G11C5/04 , G11C16/04 , G11C16/3495 , G11C29/4401 , G11C29/46 , G11C29/76 , G11C2029/0409 , G11C2029/0411
摘要： Provided is a semiconductor memory system (1000) including a plurality of main memory chips (1040) and sub-memory chips (1050). Each main memory chip includes a plurality of reserved memory blocks as alternatives to an abnormal memory block. When it is detected that the number of the remaining reserved memory blocks unused as blocks to be reassigned has reached a first predetermined value in the main memory chip, the memory blocks in the sub-memory chip start to be formatted. When the number of the remaining reserved memory blocks unused in the main memory chip reaches a second predetermined value, read/write with respect to the main memory chip is switched to the sub-memory chip, while bypassing the format process for the memory block in the sub-memory chip. Thus, in the semiconductor memory system including a main flash memory, an alternative flash memory, and a write cache memory, the capacity of a RAM for the write cache memory (1030) can be reduced.
摘要翻译： 提供了包括多个主存储器芯片（1040）和子存储器芯片（1050）的半导体存储器系统（1000）。 每个主存储器芯片包括作为异常存储器块的替代的多个保留存储块。 当检测到未被使用的剩余保留存储器块的数量被重新分配的块已经达到主存储器芯片中的第一预定值时，子存储器芯片中的存储块开始被格式化。 当在主存储器芯片中未使用的剩余保留存储块的数量达到第二预定值时，相对于主存储器芯片的读/写切换到子存储器芯片，同时绕过存储块的格式化处理 子存储芯片。 因此，在包括主闪速存储器，备用闪存和写入高速缓冲存储器的半导体存储器系统中，可以减少写入高速缓存存储器（1030）的RAM的容量。
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18.发明公开APPARATUS, SYSTEM AND METHOD FOR ACCESSING PERSISTENT FILES IN NON-EXECUTE-IN-PLACE FLASH MEMORY 有权设备，系统和方法用于访问非EXECUTE-IN-PLACE的闪存持续FILES
公开(公告)号：EP1905044A1
公开(公告)日：2008-04-02
申请号：EP06787211.9
申请日：2006-07-13
IPC分类号： G11C29/00
CPC分类号： G11C29/76
摘要： Persistent files stored in non-XIP flash memory are accessed during operation of an electronic device. During execution of application code on the device, the persistent files are accessed using an access directory such as a look-up table. The access directory provides information that allows an application or other software code running on the processor of the device to locate and access a persistent file within a non-XIP flash memory device where the non-XIP flash memory device may include bad blocks. During creation of the access directory, locations of the bad blocks in the device are identified and recorded. Files are accessed from the non-XIP flash memory device by reading from file start locations identified in the access directory while accounting for bad blocks identified in the bad block data of the access directory.
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19.发明公开
公开(公告)号：EP1533703A3
公开(公告)日：2007-10-24
申请号：EP05003250.7
申请日：1998-08-10
CPC分类号： G11C16/102 , G06F3/0613 , G06F3/064 , G06F3/0664 , G06F3/0679 , G06F12/0246 , G11C5/143 , G11C16/225 , G11C29/76
摘要： In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal, a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.
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公开(公告)号：EP1665287B8
公开(公告)日：2007-10-03
申请号：EP04766488.3
申请日：2004-08-12
申请人： Hyperstone GmbH
发明人： KÜHNE, Reinhard
IPC分类号： G11C29/00
CPC分类号： G11C29/76 , G06F12/0246
摘要： The invention relates to a method for the management of defective memory blocks in a non-volatile memory system comprising individually erasable memory blocks (SB) that can be addressed with the aid of real memory block addresses (SBA). Said memory blocks can be addressed by means of an address conversion that uses an allocator table (ZT) to convert logical block addresses (LBA) into one of the respective memory block addresses (SBA). According to the invention, the allocator table (ZT) is sub-divided into at least one useful data area (NB), a buffer block area (BB), a defect area (DB) and a reserve area (RB). If an error occurs during the erasure process, the relevant block is replaced by a reserve block and its memory block address is written to the defect area (DB).
摘要翻译： 本发明涉及一种用于管理非易失性存储器系统中的缺陷存储器块的方法，所述非易失性存储器系统包括可以借助实际存储器块地址（SBA）寻址的单独可擦除存储器块（SB）。 所述存储器块可以通过使用分配器表（ZT）将逻辑块地址（LBA）转换成各个存储器块地址（SBA）中的一个的地址转换来寻址。 根据本发明，分配器表（ZT）被细分为至少一个有用数据区域（NB），缓冲器块区域（BB），缺陷区域（DB）和保留区域（RB）。 如果在擦除过程中发生错误，则将相关块替换为备用块，并将其存储块地址写入缺陷区（DB）。
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