公开(公告)号：EP2913252A2

公开(公告)日：2015-09-02

申请号：EP15156072.9

申请日：2015-02-23

Applicant: Toyota Jidosha Kabushiki Kaisha

Inventor： Kimura, Kazutaka

IPC: B62D25/06 ,  B62D29/04 ,  H01L31/043

CPC classification number: B60K16/00 ,  B60K2016/003 ,  B62D25/06 ,  B62D27/026 ,  B62D29/043 ,  H01L31/043 ,  H01L31/048 ,  H01L31/049 ,  H02S10/40 ,  H02S20/30 ,  Y02E10/50 ,  Y02T10/90

Abstract: A solar battery mounting structure including a solar battery module (1) in which a frame (B) includes a light transmissive plate member (2), an adhesive portion (S) by which a lower surface of a side end portion of the light transmissive plate member (2) is adhered to an adhesive surface of a vehicle body frame member (B), and a fixation portion which is fixed to a lower surface of the light transmissive plate member through a sealing material layer (4), and is fixed to a fixation surface (F) of the vehicle body frame member facing the lower surface, a protrusion portion in contact with the lower surface of the light transmissive plate member through the sealing material layer is formed in the fixation portion, and frame a step portion is formed between the adhesive surface and the fixation surface.

Abstract translation: 1。一种太阳能电池安装结构，其特征在于，具备：太阳能电池模块（1），在该太阳能电池模块中，框架（B）具备透光性的板材（2）;粘合部分（S），通过该粘合部分 （2）粘接在车身框架部件（B）的粘接面上，固定部通过密封材料层（4）固定在透光性板部件的下表面上， 在面对下表面的车体框架构件的固定表面（F）上，通过密封材料层与透光板构件的下表面接触的突出部形成在固定部中，并且将台阶部 形成在粘合剂表面和固定表面之间。

公开(公告)号：EP2824706A3

公开(公告)日：2015-01-21

申请号：EP14176013.2

申请日：2014-07-07

Applicant: The Boeing Company

Inventor： Chiu, Philip ,  Rehder, Eric M.

IPC: H01L31/043 ,  H01L31/18 ,  H01L31/0687

CPC classification number: H01L31/043 ,  H01L31/0687 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: A solar cell assembly including a first solar cell component, a second solar cell component, an adhesive layer positioned between the first solar cell component and the second solar cell component, and a contact extending through the adhesive layer to electrically couple the first solar cell component to the second solar cell component.

公开(公告)号：EP2515342A3

公开(公告)日：2014-12-10

申请号：EP12164651.7

申请日：2012-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do, Eun Cheol ,  Kim, Dong Kyun ,  Kim, Yun Gi ,  Kim, Deok-Kee ,  Choi, Young Moon

IPC: H01L25/04 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/0687 ,  H01L31/0725

CPC classification number: H01L31/043 ,  Y02E10/50

Abstract: According to example embodiments, a solar cell includes a first unit portion, a second unit portion, and an insulating layer. The first and second unit portions may have different bandgaps, and the insulating layer may be between the first unit portion and the second unit portion.

公开(公告)号：EP2721644A2

公开(公告)日：2014-04-23

申请号：EP12726309.3

申请日：2012-05-31

Applicant: 3M Innovative Properties Company

Inventor： HAASE, Michael A.

IPC: H01L31/0296

CPC classification number: H01L31/042 ,  H01L25/043 ,  H01L31/0368 ,  H01L31/043 ,  H01L31/046 ,  H01L31/048 ,  H01L31/073 ,  H01L31/077 ,  H01L2924/0002 ,  Y02E10/543 ,  Y02P70/521 ,  H01L2924/00

Abstract: We describe stacked photovoltaic modules, and components thereof, in which at least one booster cell is combined with at least one primary cell in a stacked configuration. The booster cell may be in the form of a polycrystalline film disposed on a transparent substrate, such as a glass substrate, and the film may be patterned to form multiple booster cells. The booster cell includes an n-type layer and a p-type layer; the n-type layer may include polycrystalline zinc sulfide (ZnS), and the p-type layer may include polycrystalline zinc telluride (ZnTe). The n-type layer may have a band gap energy of at least 3.5 eV, and the p-type layer may have a band gap energy of at least 2 or at least 2.2 eV, or in a range from 2.2 to 2.3 eV. An intrinsic layer, also comprising polycrystalline ZnTe, may reside between the n-type and p-type layers.

Abstract translation: 我们描述堆叠的光伏模块及其组件，其中至少一个升压电池与堆叠配置中的至少一个主电池组合。 升压电池可以是设置在诸如玻璃基板的透明基板上的多晶膜的形式，并且该膜可以被图案化以形成多个增压电池。 升压电池包括n型层和p型层; n型层可以包括多晶硫化锌（ZnS），p型层可以包括多晶碲化锌（ZnTe）。 n型层可以具有至少3.5eV的带隙能量，并且p型层可以具有至少2或至少2.2eV的带隙能量，或者在2.2至2.3eV的范围内。 也包含多晶ZnTe的本征层可位于n型层和p型层之间。

公开(公告)号：EP2255392A4

公开(公告)日：2013-10-16

申请号：EP09715056

申请日：2009-02-26

Applicant: SUNLIGHT PHOTONICS INC

Inventor： FROLOV SERGEY ,  CYRUS MICHAEL

IPC: H01L25/04 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/05 ,  H01L31/052

CPC classification number: H01L31/022433 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/043 ,  H01L31/0543 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/207 ,  Y02E10/52 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/0002

公开(公告)号：EP2647034A1

公开(公告)日：2013-10-09

申请号：EP11770228.2

申请日：2011-09-21

Applicant: The Boeing Company

Inventor： BHUSARI, Dhananjay M. ,  LAW, Daniel C.

IPC: H01L21/20

CPC classification number: H01L31/0693 ,  H01L21/187 ,  H01L21/2007 ,  H01L29/205 ,  H01L31/043 ,  H01L31/0687 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (A1)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.

公开(公告)号：EP2461362A1

公开(公告)日：2012-06-06

申请号：EP10193873.6

申请日：2010-12-06

Applicant: Solsia

Inventor： Turlot, Emmanuel ,  Meot, Jacques

IPC: H01L25/04 ,  H01L27/142 ,  H01L31/048 ,  H01L31/042

CPC classification number: H01L31/046 ,  H01L25/043 ,  H01L31/043 ,  H01L31/048 ,  H01L2924/0002 ,  Y02B10/12 ,  Y02E10/50 ,  H01L2924/00

Abstract: L'invention concerne un panneau solaire comprenant une première plaque (21) comprenant sur une première face des bandes de premières diodes (21) mises en série par leurs grands côtés, et une seconde plaque (11) comprenant sur une première face des bandes de secondes diodes (13) mises en série par leurs grands côtés. Les premières faces des plaques sont accolées avec interposition d'une couche transparente (20) ; le panneau est éclairé du côté de la première plaque ; les premières diodes (23) sont adaptées à photoconvertir des rayonnements lumineux de longueur d'onde inférieure à une première valeur et à développer une première tension ; les secondes diodes sont adaptées à photoconvertir des rayonnements lumineux de longueur d'onde inférieure à une seconde valeur supérieure à la première valeur et à développer une seconde tension ; le rapport entre les largeurs des premières et deuxièmes bandes est égal au rapport entre les première et seconde tensions.

Abstract translation: 面板具有分别包括下二极管（13），即非晶硅基PIN二极管和上二极管（23）的下基板和上基板，即上二极管，即面上的非晶硅锗基NIP二极管。 所述面通过插入粘合层（20）而接合在一起。 上二极管光转换波长小于一值的光辐射并产生电压。 较低的二极管将波长小于另一个值的辐射光转换成另一个电压。 条的宽度之间的比例等于电压之间的比率。 透明层由聚合物制成。 上基板由玻璃制成。

公开(公告)号：EP2264787A3

公开(公告)日：2012-03-21

申请号：EP10181949.8

申请日：1997-12-11

Applicant: Hughes Electronics Corporation

Inventor： Lillington, David R ,  Joslin, David E

IPC: H01L31/0687 ,  H01L25/04

CPC classification number: H01L31/0687 ,  H01L31/043 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

Abstract: A two-terminal voltage or current matched solar cell has up to four photovoltaically active junctions which efficiently convert solar radiation into electricity. The solar cell comprises GaInP (10"), GaAs (12"), and GaInAsP (15"), and in the four junction case, GaInAs (70") is used as well. The invention allows the solar spectrum to be converted into electricity more efficiently than previously (Fig. 3).

公开(公告)号：EP2266144A2

公开(公告)日：2010-12-29

申请号：EP09733533.5

申请日：2009-04-13

Applicant: Sunlight Photonics Inc.

Inventor： FROLOV, Sergey ,  CYRUS, Michael ,  BRUCE, Allan, James

IPC: H01L31/042

CPC classification number: H01L31/042 ,  H01L31/043 ,  H01L31/0547 ,  Y02E10/52

Abstract: A photovoltaic device includes a plurality of photovoltaic cells disposed in an array in which each cell is adjacent to another cell. Each of the cells includes first and second photovoltaic modules. The first photovoltaic module of each cell is configured to convert a first part of light energy incident thereon into electrical energy and to reflect to the second photovoltaic module of an adjacent cell at least some of a remaining portion of light energy incident thereon. The second photovoltaic module of each cell is configured to convert into electrical energy the remaining portion of the light energy received from the first photovoltaic module of an adjacent cell.

Abstract translation: 光伏器件包括多个设置在阵列中的光伏电池，其中每个电池与另一电池相邻。 每个电池包括第一和第二光伏组件。 每个单元的第一光伏模块被配置为将入射到其上的光能的第一部分转换成电能并且向相邻电池的第二光伏模块反射入射到其上的光能的剩余部分中的至少一些。 每个电池单元的第二光伏模块被配置为将相对电池的第一光伏组件的光能的剩余部分转换成电能。

公开(公告)号：EP1427027A4

公开(公告)日：2006-12-20

申请号：EP01955695

申请日：2001-08-13

Applicant: NAKATA JOSUKE

Inventor： NAKATA JOSUKE

IPC: H01L31/0352 ,  H01L25/04 ,  H01L25/075 ,  H01L29/06 ,  H01L31/072 ,  H01L31/103

CPC classification number: H01L33/20 ,  H01L25/041 ,  H01L25/0753 ,  H01L29/0657 ,  H01L31/0352 ,  H01L31/043 ,  H01L33/24 ,  H01L2224/16145 ,  H01L2924/1017 ,  Y02E10/50

Abstract: A semiconductor device (10) suitable for a solar cell comprising a semiconductor element (1) of a spherical or generally spherical silicon single crystal (1a, 1b) having one planar face (2), a diffusion layer (3), a generally spherical p-n junction (4), a thin film (5) for a diffusion mask and a positive electrode (6a) formed on the planar face (2), a negative electrode (6b) formed on the top on the side opposite to the positive electrode (6a), and an antireflection film (7) formed on the front side of the diffusion layer (3).

Abstract translation: 一种适用于太阳能电池的半导体器件（10），该半导体器件包括具有一个平面（2），一个扩散层（3），一个总体上球形的球形或一般为球形的单晶硅（1a，1b）的半导体元件 pn结（4），形成在扩散掩模上的薄膜（5）和在该平面（2）上形成的正极（6a），在与正极相反的一侧的顶部形成的负极（6b） （6a）以及形成在扩散层（3）的前侧上的抗反射膜（7）。