Abstract:
An intercalation compound obtained by intercalating a halide of sodium (106) or an element belonging to the group IV of the periodic table such as NaBr, SiCl 4 , etc., in a layer crystal substance (105) such as graphite is suitable as an optical resonator in a device for emitting coherent radiation together with an exciting energy supplying means which can radiate synchroton radiation or plasma focus X-rays, particularly, in an X-ray laser for emitting X-rays having a wavelength of 1 nm or less.
Abstract:
This invention is generally directed to a process for the preparation of chalcogenide alloys of the elements of Groups VA to VIA of the Periodic Table, in high purity, (99.999 percent) which comprises providing pure esters of the alloys desired, and subsequently simultaneously subjecting the esters to a coreduction reaction. The esters can be obtained by treating the corresponding oxides with an alcohol or diol. Examples of alloys produced in accordance with the process of the present invention include selenium arsenic, selenium sulfur selenium tellurium, selenium tellurium arsenic, selenium sulfur tellurium, and the like.
Abstract:
A molybdenum compound is represented by a general formula MoX a (in the formula, X is a Group 14 element, a Group 15 element, or a Group 16 element, and a is 0.5, 1, or 2), has the number of functional groups per unit area of 10 per nm 2 or less when X is the Group 14 element in the general formula MoX a , has the number of functional groups per unit area of 100 per nm2 or less when X is the Group 15 element or the Group 16 element in the general formula MoXa, and has a particle diameter of 10 nm or more and less than 1,000 nm.
Abstract:
There is provided a thermoelectric conversion material containing Cu and Se as main components, an element M including one or two or more elements selected from Group 10 elements and Group 11 elements excluding Cu, and optional element of Te. The thermoelectric conversion material is represented by the following chemical formula.
Abstract:
The present invention seeks to provide cadmium-free quantum dots with a narrow fluorescence FWHM. The quantum dot (5) does not contain cadmium and its fluorescence FWHM is 30 nm or less. The quantum dot is preferably a nanocrystal containing zinc and tellurium or zinc and tellurium and sulfur or zinc and tellurium and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.
Abstract:
An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ Chemical Formula 1 M 1 Te 2 wherein M 1 is titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), tantalum (Ta), or niobium (Nb); and €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ Chemical Formula 2 M 2 Se 2 wherein M 2 is vanadium (V) or tantalum (Ta).
Abstract:
Provided is a method for synthesizing group II-VI compound semiconductor polycrystals in which synthesis can be accomplished without the use of a quart ampoule as the polycrystal synthesis vessel, and as a result it is possible to use a larger vessel without reducing yield, and costs can thereby be reduced. Two or more starting elements are introduced to a semi-airtight pBN inner vessel (6a), the inner vessel is introduced to a semi-airtight heat-resistant outer vessel (6b) and placed in a high-pressure furnace (1) having a heating means (7), the air inside the high-pressure furnace is evacuated and the furnace is filled with an inert gas under a predetermined pressure, the outer vessel and inner vessel are heated and the temperature is raised using the heating means, the starting elements inside the inner vessel are melted and reacted, and the temperature is then gradually lowered to promote growth of polycrystals.